2SD468 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R211-003.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Collector Peak Current ICP 1.5 A
Collector Power Dissipation PC 0.9 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=10µA, IE=0 25 V
Collector-Emitter Breakdown Voltage BVCEO Ic=1mA, RBE=∞ 20 V
Emitter-Base Breakdown Voltage BVEBO I
E=10µA, IC=0 5 V
Collector Cut-Off Current ICBO V
CB=20V, IE=0 1 µA
DC Current Transfer Ratio hFE V
CE=2V, Ic=0.5A (Note) 85 240
Collector-Emitter Saturation Voltage VCE(SAT) Ic=0.8A, IB=0.08A (Note) 0.2 0.5 V
Base-Emitter Voltage VBE V
CE=2V, Ic=0.5A (Note) 0.79 1 V
Gain Bandwidth Product fT V
CE=2V, Ic=0.5A (Note) 190 MHz
Collector Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 22 pF
Note: Pulse test
CLASSIFICATION OF hFE
RANK B C
RANGE 85 - 170 120 - 240