UNISONIC TECHNOLOGIES CO., LTD
2SD468 NPN SILICON TRANSISTOR
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R211-003.B
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
* Low frequency power am plifier
* Complement to 2SB562
TO-92
1
TO-92NL
1
*Pb-free plating product number: 2SD4 68L
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
2SD468-x-T92-B 2SD468L-x-T92-B TO-92 E C B Tape Box
2SD468-x-T92-K 2SD468L-x-T92-K TO-92 E C B Bulk
2SD468-x-T9N-B 2SD468L-x-T9N-B TO-92NL E C B Tape Box
2SD468-x-T9N-K 2SD468L-x-T9N-K TO-92NL E C B Bulk
2SD468 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R211-003.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Collector Peak Current ICP 1.5 A
Collector Power Dissipation PC 0.9 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=10µA, IE=0 25 V
Collector-Emitter Breakdown Voltage BVCEO Ic=1mA, RBE=∞ 20 V
Emitter-Base Breakdown Voltage BVEBO I
E=10µA, IC=0 5 V
Collector Cut-Off Current ICBO V
CB=20V, IE=0 1 µA
DC Current Transfer Ratio hFE V
CE=2V, Ic=0.5A (Note) 85 240
Collector-Emitter Saturation Voltage VCE(SAT) Ic=0.8A, IB=0.08A (Note) 0.2 0.5 V
Base-Emitter Voltage VBE V
CE=2V, Ic=0.5A (Note) 0.79 1 V
Gain Bandwidth Product fT V
CE=2V, Ic=0.5A (Note) 190 MHz
Collector Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 22 pF
Note: Pulse test
CLASSIFICATION OF hFE
RANK B C
RANGE 85 - 170 120 - 240
2SD468 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw QW-R211-003.B
TYPICAL CHARACTERISTICS
Collector Power Dissipation, PC (W)
Collector Current, IC(A)
PC=0.9W
Base to Emitter Voltage, VBE (V)
0 0.2 0.4 0.6 0.8 1.0
1
3
10
30
100
300
1,000 Typical Transfer Characteristics
Collector current, IC(mA)
Ta=75℃25℃
VCE=2V
5
10
50
200
500
1 3 10 30 100 300 1,000
Collector Current, IC(mA)
DC Current Transfer Ratio, hFE
DC Current Transfer Ratio
vs. Collector Current
20
100
1,000
2,000
5,000
VCE=2V
Ta=75℃
25℃
2SD468 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
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TYPICAL CHARACTERISTICS(Cont.)
510 5020
2
5
10
20
50
100
200
Collector to Base Voltage, VCB (V)
Collector Output Capacitance
vs. Collector to Base Voltage
f=1MHz
IE=0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
