TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device TN2540 Package Options RDS(ON) ID(ON) VGS(th) (V) (max) () (min) (A) (max) (V) 400 12 1.0 2.0 BVDSS/BVDGS TO-92 TO-243AA (SOT-89) Die* TN2540N3-G TN2540N8-G TN2540ND -G indicates package is RoHS compliant (`Green') * MIL visual screening available Pin Configurations DRAIN SOURCE DRAIN Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55OC to +150OC 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. GATE GATE TO-92 (N3) SOURCE DRAIN TO-243AA (SOT-89) (N8) Product Marking TN 2 5 4 0 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging TO-92 (N3) TN5DW W = Code for week sealed = "Green" Packaging TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TN2540 Thermal Characteristics ID ID Power Dissipation ( C/W) IDR (mA) IDRM 125 170 175 2.0 15 78 260 1.8 jc Package (continuous) (mA) (pulsed) (A) @TA = 25OC (W) ( C/W) TO-92 175 2.0 0.74 TO-243AA (SOT-89) 260 1.8 1.6 O O ja (A) Notes: ID (continuous) is limited by max rated Tj . Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 400 - - V VGS = 0V, ID = 100A VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - -2.5 -4.0 IGSS Gate body leakage - - 100 nA VGS = 20V, VDS = 0V - - 10 A IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C ID(ON) On-state drain current 0.3 0.5 - 0.75 1.0 - - 8.0 12 - 8.0 12 - - 0.75 125 200 - VGS(th) RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/OC VGS = VDS, ID= 1.0mA A %/ C O VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 150mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA GFS Forward transductance CISS Input capacitance - 95 125 COSS Common source output capacitance - 20 70 CRSS Reverse transfer capacitance - 10 25 td(ON) Turn-on delay time - - 20 Rise time - - 15 Turn-off delay time - - 25 Fall time - - 20 Diode forward voltage drop - - 1.8 V VGS = 0V, ISD = 200mA Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.0A tr td(OFF) tf VSD trr mmho VDS = 25V, ID = 100mA pF ns VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 1.0A, RGEN = 25 Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD VDD t(OFF) tr 10% td(OFF) RL OUTPUT RGEN tF D.U.T. 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 TN2540 Typical Performance Curves 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 TN2540 Typical Performance Curves (cont.) BV DSS Variation with Temperature On-Resistance vs. Drain Current 1.1 50 V GS = 4.5V R D S ( O N ) ( ohms ) B V D S S ( norma liz e d) 40 1.0 V GS = 10V 30 20 10 0 0.9 -50 0 50 100 0 150 0.4 0.8 T j ( C) 1.2 1.6 2.0 I D (amperes) Transfer Characteristics V(th) and R DS Variation with Temperature 2.5 1.5 1.4 R DS(ON)@ 10V, 0.5A V G S ( th) ( norma liz e d) I D ( a mpe re s ) 1.2 T A = -55 C 0.9 25 C 0.6 2.0 V (th)@ 1mA 1.2 1.5 1.0 1.0 0.8 0.5 125 C 0.3 0.6 0 0 2 4 6 8 -50 10 50 0 100 150 T j ( C) V GS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 200 f = 1MHz 8 V DS = 10V V G S ( volts ) C ( pic ofa ra ds ) 150 C ISS 100 6 V DS = 40V 4 260 pF 50 2 C OSS C RSS 0 0 95pF 0 10 20 30 V DS (volts) 40 0 0.4 0.8 1.2 1.6 2.0 Q G (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 R D S ( O N ) ( norma liz e d) V DS = 25V TN2540 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014 .014 .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022 .022 .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5 TN2540 3-Lead TO-243AA (SOT-89) Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version D070908. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2008 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2540 A091408 6 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com