SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48, USM12G48, SM12J48, USM12J48 SM12G48A, USM12G48A, SM12J48A, USM12J48A AC POWER CONTROL APPLICATIONS z Repetitive Peak Off-State Voltage : VDRM=400V, 600V z R.M.S. On-State Current : IT (RMS) =12A z Gate Trigger Current : IGT=30mA Max. : IGT=20mA Max. ("A"Type) Unit: mm SM12G48, SM12J48, SM12G48A, SM12J48A USM12G48, USM12J48, USM12G48A, USM12J48A JEDEC JEDEC JEITA JEITA TOSHIBA 13-10J1A TOSHIBA 13-10J2A Weight: 1.7g MARKING Part No. (or abbreviation code) M12G48 M12G48 Characteristics indicator*2 Part No. (or abbreviation code) *1 Lot No. *1 M12J48 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Nothing *2 A 1 Part No. SM12G48, SM12G48A USM12G48, USM12G48A SM12J48, SM12J48A USM12J48, USM12J48A SM12G48, SM12J48 USM12G48, USM12J48 SM12G48A, SM12J48A USM12G48A, USM12J48A 2006-10-30 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage SYMBOL (U)SM12G48 (U)SM12G48A (U)SM12J48 (U)SM12J48A R.M.S On-State Current 2 Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation V 600 ITSM 2 I t Limit Value UNIT 400 VDRM IT (RMS) Peak One Cycle Surge On-State Current (Non-Repetitive) RATING 12 120 (50Hz) 132 (60Hz) A A 2 I t 72 A s di /dt 50 A / s PGM 5 W PG (AV) 0.5 W Peak Forward Gate Voltage VGM 10 V Peak Forward Gate Current IGM 2 A Junction Temperature Storage Temperature Range Tj -40~125 C Tstg -40~125 C Note 1 : VDRM=0.5xRated ITM15A tgw10s tgr250ns igp=IGTx2.0 Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2006-10-30 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL Repetitive Peak Off-State Current IDRM TEST CONDITION VDRM=Rated I II Gate Trigger Voltage UNIT 20 A 1.5 1.5 1.5 IV T2 (-) , Gate (+) 30 VGT VD=12V RL=20 I T2 (+) , Gate (+) II T2 (+) , Gate (-) 30 III T2 (-) , Gate (-) 30 T2 (-) , Gate (+) I SM12G48A SM12J48A MAX. T2 (-) , Gate (-) IV Gate Trigger Current TYP. T2 (+) , Gate (-) III SM12G48 SM12J48 T2 (+) , Gate (+) MIN. IGT VD=12V RL=20 T2 (+) , Gate (+) 20 II T2 (+) , Gate (-) 20 III T2 (-) , Gate (-) 20 IV mA Peak On-State Voltage VTM ITM=17A 1.5 V Gate Non-Trigger Voltage VGD VD=Rated, Tc=125C 0.2 V VD=12V, ITM=1A 50 mA 2.4 C / W 300 200 10 4 Holding Current IH Thermal Resistance Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of Off-State Voltage at Commutation T2 (-) , Gate (+) V (U)SM12G48 (U)SM12J48 (U)SM12G48A (U)SM12J48A (U)SM12G48 (U)SM12J48 (U)SM12G48A (U)SM12J48A Rth (j-c) Junction to Case, AC dv / dt VDRM=Rated, Tj=125C Exponential Rise (dv / dt) c VDRM=400V, Tj =125C (di / dt) c=-6.5A / ms 3 V / s V / s 2006-10-30 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A 4 2006-10-30 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A 5 2006-10-30 SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2006-10-30