2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO-220 Type Package Description: The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO-220 type package designed for general purpose amplifier and low-speed switching applications. Features: D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) - 2N6666 = 60V (Min) - 2N6667 = 80V (Min) - 2N6668 D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A - 2N6666 = 2V Max @ IC = 5A - 2N6667, 2N6668 Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 2N6666 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N6667 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V 2N6668 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCBO 2N6666 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N6667 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V 2N6668 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous 2N6666 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A 2N6667, 2N6668 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 40 - - V 2N6667 60 - - V 2N6668 80 - - V OFF Characteristics Collector-Emitter Sustaining Voltage 2N6666 Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 ICEO VCE = Rated VCEO, IB = 0 - - 1.0 mA ICEX VCE = Rated VCEO, VEB(off) = 1.5V - - 0.3 mA - - 3 mA - - 5 mA TC = +125C IEBO VBE = 5V, IC = 0 hFE IC = 3A, VCE = 3V 1000 - 20000 2N6667, 2N6668 IC = 5A, VCE = 3V 1000 - 20000 2N6666 IC = 8A, VCE = 3V 100 - - 2N6667, 2N6668 IC = 10A, VCE = 3V 100 - - IC = 3A, IB = 6mA - - 2 V 2N6667, 2N6668 IC = 5A, IB = 10mA - - 2 V 2N6666 IC = 8A, IB = 80mA - - 3 V 2N6667, 2N6668 IC = 10A, IB = 100mA - - 3 V IC = 3A, VCE = 3V - - 2.8 V 2N6667, 2N6668 IC = 5A, VCE = 3V - - 2.8 V 2N6666 IC = 8A, VCE = 3V - - 4.5 V 2N6667, 2N6668 IC = 10A, VCE = 3V - - 4.5 V 1000 - - - - 200 ON Characteristics (Note 1) DC Current Gain 2N6666 Collector-Emitter Saturation Voltage 2N6666 Base-Emitter ON Voltage 2N6666 VCE(sat) VBE(on) Switching Characteristics Small-Signal Current Gain hfe IC = 1A, VCE = 5V, ftest = 1MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. C B 80k 120 E pF .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Min .250 (6.35) Max .500 (12.7) Max .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab