Features
Fast charge of nickel cadmium
or nickel-metal hydride batter-
ies
Direct LED output displays
charge status
Fast-charge termination by -V,
maximum voltage, maximum
temperature, and maximum
time
Internal band-gap voltage ref-
erence
Optional top-off charge
Selectable pulse trickle charge
rates
Low-power mode
8-pin 300-mil DIP or 150-mil
SOIC
General Description
The bq2002E and bq2002G Fast-
Charge ICs are low-cost CMOS bat-
tery-charge controllers providing reli-
able charge termination for both NiCd
and NiMH battery applications. Con-
trolling a current-limited or con-
stant-current supply allows the
bq2002E/G to be the basis for a cost-
effective stand-alone or system-inte-
grated charger. The bq2002E/G inte-
grates fast charge with optional top-off
and pulsed- trickle control in a single
IC for charging one or more NiCd or
NiMH battery cells.
Fast charge is initiated on application
of the charging supply or battery re-
placement. For safety, fast charge is
inhibited if the battery temperature
and voltage are outside configured
limits.
Fast charge is terminated by any of
the following:
nPeak voltage detection (PVD)
nNegative delta voltage (-V)
nMaximum voltage
nMaximum temperature
nMaximum time
After fast charge, the bq2002E/G op-
tionally tops-off and pulse-trickles the
battery per the pre-configured limits.
Fast charge may be inhibited using
the INH pin. The bq2002E/G may
also be placed in low-standby-power
mode to reduce system power con-
sumption.
The bq2002E differs from the
bq2002G only in that a slightly dif-
ferent set of fast-charge and top-off
time limits is available. All differ-
ences between the two ICs are illus-
trated in Table 1.
1
NiCd/NiMH Fast-Charge Management ICs
bq2002E/G
TM Timer mode select input
LED Charging status output
BAT Battery voltage input
VSS System ground
1
PN-200201.eps
8-Pin DIP or
Narrow SOIC
2
3
4
8
7
6
5
TM
LED
BAT
VSS
CC
INH
VCC
TS
TS Temperature sense input
VCC Supply voltage input
INH Charge inhibit input
CC Charge control output
Pin Connections Pin Names
2/99
bq2002E/G Selection Guide
Part No. LBAT TCO HTF LTF -VPVD Fast Charge tMTO Top-Off Maintenance
bq2002E 0.175
VCC 0.5
VCC 0.6
VCC None C/2 200 None C/32
1C 80 C/16 C/32
2C 40 None C/32
bq2002G 0.175
VCC 0.5
VCC 0.6
VCC None C/2 160 None C/32
1C 80 C/16 C/32
2C 40 None C/32
Pin Descriptions
TM Timer mode input
A three-level input that controls the settings
for the fast charge safety timer, voltage ter-
mination mode, top-off, pulse-trickle, and
voltage hold-off time.
LED Charging output status
Open-drain output that indicates the charging
status.
BAT Battery input voltage
The battery voltage sense input. The input to
this pin is created by a high-impedance re-
sistor divider network connected between
the positive and negative terminals of the
battery.
VSS System ground
TS Temperature sense input
Input for an external battery temperature
monitoring thermistor.
VCC Supply voltage input
5.0V ±20% power input.
INH Charge inhibit input
When high, INH suspends the fast charge in
progress. When returned low, the IC re-
sumes operation at the point where initially
suspended.
CC Charge control output
An open-drain output used to control the
charging current to the battery. CC switch-
ing to high impedance (Z) enables charging
current to flow, and low to inhibit charging
current. CC is modulated to provide top-off,
if enabled,and pulse trickle.
Functional Description
Figure 2 shows a state diagram and Figure 3 shows a
block diagram of the bq2002E/G.
Battery Voltage and Temperature
Measurements
Battery voltage and temperature are monitored for
maximum allowable values. The voltage presented on
the battery sense input, BAT, should represent a
single-cell potential for the battery under charge. A
resistor-divider ratio of
RB1
RB2 = N - 1
is recommended to maintain the battery voltage within
the valid range, where N is the number of cells, RB1 is
the resistor connected to the positive battery terminal,
and RB2 is the resistor connected to the negative bat-
tery terminal. See Figure 1.
Note: This resistor-divider network input impedance to
end-to-end should be at least 200kand less than 1 M.
2
bq2002E/G
Fg2002E/G01.eps
bq2002E/G
BAT
VSS
N
T
C
bq2002E/G
VCC
VCC PACK +
TS
VSS
BAT pin connection Thermistor connection
TM
NTC = negative temperature coefficient thermistor.
RT
R3
R4
RB1
RB2
Mid-level
setting for TM
Figure 1. Voltage and Temperature Monitoring and TM Pin Configuration
3
bq2002E/G
OSC
TM
CC LED VCC VSS
BAT
INH
Clock
Phase
Generator
Timing
Control Sample
History
A to D
Converter
MCV
Check
Power
Down
TS
Bd2002CEG.eps
Voltage
Reference
Power-On
Reset TCO
Check
HTF
Check
LBAT
Check
Charge-Control
State Machine
PVD, - V
ALU
Figure 3. Block Diagram
Chip on
VCC 4.0V Battery Voltage
too High?
Battery
Temperature? Charge
Pending
Fast
LED =
Low
SD2002C.eps
Battery Voltage
too Low?
VBAT < 2V
VTS < 0.6
VBAT > 0.175
VBAT < 2V, and
VTS > VCC/2
VBAT
>
2V
Top-off
LED = Z
Trickle
LED =
Flash
Trickle
LED = Z
VBAT > 2V
VBAT 2V
VCC
VTS > 0.6
VCC
VCC,
0.175
VCC < VBAT
VCC
VBAT < 0.175
VBAT > 2V or
VTS < VCC/2 or
((PVD or - V or
Maximum Time Out)
and TM Low)
VBAT
VTS
Maximum Time Out
2V or
VCC/2 or
(PVD or -
Maximum Time Out)
and TM = Low
V or
Figure 2. State Diagram
A ground-referenced negative temperature coefficient ther-
mistor placed near the battery may be used as a low-cost
temperature-to-voltage transducer. The temperature
sense voltage input at TS is developed using a resistor-
thermistor network between VCC and VSS. See Figure 1.
Starting A Charge Cycle
Either of two events starts a charge cycle (see Figure 4):
1.Application of power to VCC or
2. Voltage at the BAT pin falling through the maximum
cell voltage VMCV where
VMCV = 2V ±5%.
If the battery is within the configured temperature and
voltage limits, the IC begins fast charge. The valid bat-
tery voltage range is VLBAT <V
BAT <V
MCV,where
4
bq2002E/G
Corre-
sponding
Fast-Charge
Rate TM Termination
Typical Fast-
Charge and
Top-Off
Time Limits
(minutes) Typical PVD
and -V
Hold-Off Time
(seconds) Top-Off
Rate
Pulse-
Trickle
Rate
Pulse-
Trickle
Width
(ms)
Maximum
Synchro-
nized
Sampling
Period
(seconds)
bq2002E bq2002G
C/2 Mid PVD 200 160 300 Disabled C/32 73 18.7
1C Low PVD 80 80 150 C/16 C/32 37 18.7
2C High -V 40 40 75 Disabled C/32 18 9.4
Notes: Typical conditions = 25°C, VCC = 5.0V
Mid = 0.5 *VCC ±0.5V
Tolerance on all timing is ±12%.
Table 1. Fast-Charge Safety Time/Hold-Off/Top-Off Table
TD2002EG.eps
Fast ChargingVCC = 0 Fast Charging
CC Output
LED
Charge initiated by application of power
Charge initiated by battery replacement
Pulse-TrickleTop-Off
(optional)
73ms
1.17s 1.17s
See Table 1
Figure 4. Charge Cycle Phases
VLBAT = 0.175 VCC ±20%
The valid temperature range is VTS >V
HTF where
VHTF = 0.6 VCC ±5%.
If the battery voltage or temperature is outside of these
limits, the IC pulse-trickle charges until the next new
charge cycle begins.
If VMCV <V
BAT <V
PD (see “Low-Power Mode”) when a
new battery is inserted, a delay of 0.35 to 0.9s is imposed
before the new charge cycle begins.
Fast charge continues until termination by one or more of
the five possible termination conditions:
nPeak voltage detection (PVD)
nNegative delta voltage (-V)
nMaximum voltage
nMaximum temperature
nMaximum time
PVD and -V Termination
There are two modes for voltage termination, depending
on the state of TM. For -V (TM = high), if VBAT is lower
than any previously measured value by 12mV ±3mV, fast
charge is terminated. For PVD (TM = low or mid), a de-
crease of 2.5mV ±2.5mV terminates fast charge. The PVD
and -V tests are valid in the range 1V < VBAT <2V.
Synchronized Voltage Sampling
Voltage sampling at the BAT pin for PVD and -V termi-
nation may be synchronized to an external stimulus us-
ing the INH input. Low-high-low input pulses between
100ns and 3.5ms in width must be applied at the INH
pin with a frequency greater than the “maximum syn-
chronized sampling period” set by the state of the TM
pin as shown in Table 1. Voltage is sampled on the fal-
ling edge of such pulses.
If the time between pulses is greater than the synchro-
nizing period, voltage sampling “free-runs” at once every
17 seconds. A sample is taken by averaging together
voltage measurements taken 57µs apart. The IC takes
32 measurements in PVD mode and 16 measurements
in -V mode. The resulting sample periods (9.17 and
18.18ms, respectively) filter out harmonics centered
around 55 and 109Hz. This technique minimizes the ef-
fect of any AC line ripple that may feed through the
power supply from either 50 or 60Hz AC sources.
If the INH input remains high for more than 12ms, the
voltage sample history kept by the IC and used for PVD
and -V termination decisions is erased and a new his-
tory is started. Such a reset is required when transition-
ing from free-running to synchronized voltage sampling.
The response of the IC to pulses less than 100ns in
width or between 3.5ms and 12ms is indeterminate. Tol-
erance on all timing is ±12%.
Voltage Termination Hold-off
A hold-off period occurs at the start of fast charging.
During the hold-off time, the PVD and -V terminations
are disabled. This avoids premature termination on the
voltage spikes sometimes produced by older batteries
when fast-charge current is first applied. Maximum
voltage and temperature terminations are not affected
by the hold-off period.
Maximum Voltage,Temperature,and Time
Any time the voltage on the BAT pin exceeds the maxi-
mum cell voltage,VMCV, fast charge or optional top-off
charge is terminated.
Maximum temperature termination occurs anytime the
voltage on the TS pin falls below the temperature cut-off
threshold VTCO where
VTCO = 0.5 VCC ±5%.
Maximum charge time is configured using the TM pin.
Time settings are available for corresponding charge
rates of C/2, 1C, and 2C. Maximum time-out termina-
tion is enforced on the fast-charge phase, then reset, and
enforced again on the top-off phase, if selected. There is
no time limit on the trickle-charge phase.
Top-off Charge
An optional top-off charge phase may be selected to
follow fast charge termination for 1C and C/2 rates.
This phase may be necessary on NiMH or other bat-
tery chemistries that have a tendency to terminate
charge before reaching full capacity. With top-off en-
abled, charging continues at a reduced rate after
fast-charge termination for a period of time selected
by the TM pin. (See Table 1.) During top-off, the CC
pin is modulated at a duty cycle of 73ms active for
every 1097ms inactive. This modulation results in an
average rate 1/16th that of the fast charge rate. Maxi-
mum voltage, time, and temperature are the only ter-
mination methods enabled during top-off.
Pulse-Trickle Charge
Pulse-trickle is used to compensate for self-discharge
while the battery is idle in the charger. The battery is
pulse-trickle charged by driving the CC pin active once
every 1.17s for the period specified in Table 1. This re-
sults in a trickle rate of C/32.
TM Pin
The TM pin is a three-level pin used to select the
charge timer, top-off, voltage termination mode, trickle
5
bq2002E/G
rate, and voltage hold-off period options. Table 1 de-
scribes the states selected by the TM pin. The mid-
level selection input is developed by a resistor di-
vider between VCC and ground that fixes the voltage
on TM at VCC/2 ±0.5V. See Figure 4.
Charge Status Indication
A fast charge in progress is uniquely indicated when the
LED pin goes low. The LED pin is driven to the high-Z
state for all conditions other than fast charge. Figure 2
outlines the state of the LED pin during charge.
Charge Inhibit
Fast charge and top-off may be inhibited by using the
INH pin. When high, INH suspends all fast charge and
top-off activity and the internal charge timer. INH
freezes the current state of LED until inhibit is removed.
Temperature monitoring is not affected by the INH pin.
During charge inhibit, the bq2002E/G continues to
pulse-trickle charge the battery per the TM selection.
When INH returns low, charge control and the charge
timer resume from the point where INH became active.
Low-Power Mode
The IC enters a low-power state when VBAT is driven
above the power-down threshold (VPD) where
VPD = VCC - (1V ±0.5V)
Both the CC pin and the LED pin are driven to the
high-Z state. The operating current is reduced to less
than 1µA in this mode. When VBAT returns to a value
below VPD, the IC pulse-trickle charges until the next
new charge cycle begins.
6
bq2002E/G
7
bq2002E/G
Absolute Maximum Ratings
Symbol Parameter Minimum Maximum Unit Notes
VCC VCC relative to VSS -0.3 +7.0 V
VTDC voltage applied on any pin
excluding VCC relative to VSS -0.3 +7.0 V
TOPR Operating ambient temperature 0 +70 °C Commercial
TSTG Storage temperature -40 +85 °C
TSOLDER Soldering temperature - +260 °C 10 sec max.
TBIAS Temperature under bias -40 +85 °C
Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Thresholds (TA= 0 to 70°C; VCC ±20%)
Symbol Parameter Rating Tolerance Unit Notes
VTCO Temperature cutoff 0.5 *VCC ±5% V VTS VTCO inhibits/terminates
fast charge and top-off
VHTF High temperature fault 0.6 VCC ±5% VV
TS <V
HTF inhibits fast charge
start
VMCV Maximum cell voltage 2 ±5% V VBAT VMCV inhibits/terminates
fast charge and top-off
VLBAT Minimum cell voltage 0.175 VCC ±20% VV
BAT <V
LBAT inhibits fast charge
start
-VBAT input change for
-V detection -12 ±3mV
PVD BAT input change for
PVD detection -2.5 ±2.5 mV
8
bq2002E/G
Recommended DC Operating Conditions (TA= 0 to 70°C)
Symbol Condition Minimum Typical Maximum Unit Notes
VCC Supply voltage 4.0 5.0 6.0 V
VDET -V, PVD detect voltage 1 - 2 V
VBAT Battery input 0 - VCC V
VTS Thermistor input 0.5 - VCC VV
TS < 0.5V prohibited
VIH Logic input high 0.5 - - V INH
Logic input high VCC - 0.5 - - V TM
VIM Logic input mid VCC
2- 0.5 -VCC
205+.VTM
VIL Logic input low - - 0.1 V INH
Logic input low - - 0.5 V TM
VOL Logic output low - - 0.8 V LED,CC,I
OL = 10mA
VPD Power down VCC - 1.5 - VCC - 0.5 V VBAT VPD max. powers
down bq2002E/G;
VBAT < VPD min. =
normal operation.
ICC Supply current - - 500 µA Outputs unloaded,
VCC = 5.1V
ISB Standby current - - 1 µAV
CC = 5.1V, VBAT = VPD
IOL LED, CC sink 10 - - mA @VOL = VSS + 0.8V
ILInput leakage - - ±1µA INH, CC,V = VSS to VCC
IOZ Output leakage in
high-Z state -5 - - µA LED,CC
Note: All voltages relative to VSS.
9
Impedance
Symbol Parameter Minimum Typical Maximum Unit
RBAT Battery input impedance 50 - - M
RTS TS input impedance 50 - - M
Timing (TA= 0 to +70°C; VCC ±10%)
Symbol Parameter Minimum Typical Maximum Unit Notes
dFCV Time base variation -12 - 12 %
tDLY Start-up delay 0.35 - 0.9 s Starting from VMCV <V
BAT <V
PD
Note: Typical is at TA= 25°C, VCC = 5.0V.
bq2002E/G
10
D
E1
E
C
e
L
G
B
A
A1
B1
S
8-Pin DIP (PN)
8-Pin PN (0.300" DIP)
Dimension Inches Millimeters
Min. Max. Min. Max.
A 0.160 0.180 4.06 4.57
A1 0.015 0.040 0.38 1.02
B 0.015 0.022 0.38 0.56
B1 0.055 0.065 1.40 1.65
C 0.008 0.013 0.20 0.33
D 0.350 0.380 8.89 9.65
E 0.300 0.325 7.62 8.26
E1 0.230 0.280 5.84 7.11
e 0.300 0.370 7.62 9.40
G 0.090 0.110 2.29 2.79
L 0.115 0.150 2.92 3.81
S 0.020 0.040 0.51 1.02
8-Pin SOIC Narrow (SN)
8-Pin SN (0.150" SOIC)
Dimension Inches Millimeters
Min. Max. Min. Max.
A 0.060 0.070 1.52 1.78
A1 0.004 0.010 0.10 0.25
B 0.013 0.020 0.33 0.51
C 0.007 0.010 0.18 0.25
D 0.185 0.200 4.70 5.08
E 0.150 0.160 3.81 4.06
e 0.045 0.055 1.14 1.40
H 0.225 0.245 5.72 6.22
L 0.015 0.035 0.38 0.89
bq2002E/G
11
bq2002E/G
Ordering Information
bq2002E/G
Package Option:
PN = 8-pin plastic DIP
SN = 8-pin narrow SOIC
Device:
bq2002E Fast Charge IC
bq2002G Fast Charge IC
Data Sheet Revision History
Change No. Page No. Description Nature of Change
1 1 Added selection guide
Notes: Change 1 = Feb. 1999 B changes from Sept. 1997
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any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
>> Semiconductor Home > Products > Analog & Mixed-Signal > Power Management > Battery Management > Chargers >
BQ2002E, SIMPLE 8-PIN FAST-CHARGE CONTROLLER WITH TERMINATION
Device Status: Active
Description
> Description
> Features
> Datasheets
> Pricing/Samples/Availability
> Application Notes
> Development Tools
> Applications
Parameter Name BQ2002E
Control Topology Gating
Primary Charge Termination
Method (-)dV, PVD
Safety Charge Timer Yes
Temperature Monitoring Yes
Charge Status Outputs 1
Target Application Wireless phone, PDA, Power tool, Consumer
electronics
The bq2002E and bq2002G Fast-Charge ICs are low-cost CMOS battery-charge controllers
providing reliable charge termination for both NiCd and NiMH battery applications.
Controlling a current-limited or constant-current supply allows the bq2002E/G to be the
basis for a cost-effective stand-alone or system-integrated charger. The bq2002E/G
integrates fast charge with optional top-off and pulsed-trickle control in a single IC for
charging one or more NiCd or NiMH battery cells.
Fast charge is initiated on application of the charging supply or battery replacement. For
safety, fast charge is inhibited if the battery temperature and voltage are outside configured
limits.
Fast charge is terminated by any of the following:
lPeak voltage detection (PVD)
lNegative delta voltage (-V)
lMaximum voltage
lMaximum temperature
lMaximum time
After fast charge, the bq2002E/G optionally tops-off and pulse-trickles the battery per the
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Datasheets
Full datasheet in Acrobat PDF: slus132.pdf (78 KB)
Pricing/Samples/Availability
Application Reports
lELECTROSTATIC DISCHARGE APPLICATION NOTE (SSYA008 - Updated: 05/05/1999)
lTHERMAL CHARACTERISTICS OF LINEAR AND LOGIC PACKAGES USING JEDEC PCB
DESIGNS (SZZA017A - Updated: 09/10/1999)
Table Data Updated on: 7/18/2000
(c) Copyright 2000 Texas Instruments Incorporated. All rights reserved.
pre-configured limits. Fast charge may be inhibited using the INH pin. The bq2002E/G may
also be placed in low-standby-power mode to reduce system power consumption. The
bq2002E differs from the bq2002G only in that a slightly different set of fast-charge and top-
off time limits is available. All differences between the two ICs are illustrated in Table 1.
lFast charge of nickel cadmium or nickel-metal hydride batteries
lDirect LED output displays charge status
lFast-charge termination by -V, maximum voltage, maximum temperature, and
maximum time
lInternal band-gap voltage reference
lOptional top-off charge
lSelectable pulse trickle charge rates
lLow-power mode
l8-pin 300-mil DIP or 150-mil SOIC
Orderable Device Package Pins Temp (ºC) Status Price/unit
USD (100-999) Pack Qty Availability / Samples
BQ2002EPN P8 ACTIVE 1.63 50 Check stock or order
BQ2002ESN D8 ACTIVE 1.69 75 Check stock or order
BQ2002ESN-SI D8 ACTIVE 2.53 75 Check stock or order
BQ2002ESN-SITR D8 ACTIVE 1.52 2500 Check stock or order
BQ2002ESNTR D8 ACTIVE 1.52 2500 Check stock or order
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