BC817 / BC818
BC817 / BC818
NPN Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN
Version 2007-04-13
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 310 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC817 BC818
Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short VCES 50 V 30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 45 V 25 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5 V
Power dissipation – Verlustleistung Ptot 310 mW 1)
Collector current – Kollektorstrom (dc) IC800 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 1 A
Peak Emitter current – Emitter-Spitzenstrom - IEM 1 A
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
–
–
–
250
400
630
VCE = 1 V, IC = 500 mA all groups hFE 40 – –
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA VCEsat – – 0.7 V
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 500 mA, IB = 50 mA VBEsat – – 1.3 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5 max
1.3
±0.1
1.1
0.4
2.9
±0.1
12
3
Type
Code
1.9
BC817 / BC818
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 1 V, IC = 500 mA VBE – – 1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 20 V, (E open)
VCB = 20 V, Tj = 125°C, (E open)
ICB0
ICB0
–
–
–
–
100 nA
5 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open) IEB0 – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz fT– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 12 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BC807 / BC808
Marking of available current gain groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen
pro Typ
BC817-16 = 6A or 6CR
BC817-25 = 6B or 6CS
BC817-40 = 6C or 6CT
BC818-16 = 6E or 6CR
BC818-25 = 6F or 6CS
BC818-40 = 6G or 6CT
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
