Philips Semiconductors Product specification
Triacs BT139 series E
sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose BT139- 500E 600E 800E
bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V
control applications, where high voltages
sensitivity is required in all four IT(RMS) RMS on-state current 16 16 16 A
quadrants. ITSM Non-repetitive peak on-state 140 140 140 A
current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 50016001800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 16 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 140 A
t = 16.7 ms - 150 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
T1T2
G
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.200
Philips Semiconductors Product specification
Triacs BT139 series E
sensitive gate
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A T2+ G+ - 2.5 10 mA
T2+ G- - 4.0 10 mA
T2- G- - 5.0 10 mA
T2- G+ - 11 25 mA
ILLatching current VD = 12 V; IGT = 0.1 A T2+ G+ - 3.2 30 mA
T2+ G- - 16 40 mA
T2- G- - 4.0 30 mA
T2- G+ - 5.5 40 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 4.0 30 mA
VTOn-state voltage IT = 20 A - 1.2 1.6 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
IDOff-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/µs
off-state voltage exponential waveform; gate open circuit
tgt Gate controlled turn-on ITM = 20 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
September 1997 2 Rev 1.200
Philips Semiconductors Product specification
Triacs BT139 series E
sensitive gate
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
99˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15 20
0
5
10
15
20
25
= 180
120
90
60
30
BT139
IT(RMS) / A
Ptot / W Tmb(max) / C
125
119
113
107
101
95
1
-50 0 50 100 150
0
5
10
15
20 BT139
99 C
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000 BT139
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01 0.1 1 10
0
10
20
30
40
50 BT139
surge duration / s
IT(RMS) / A
1 10 100 1000
0
50
100
150 BT139
Number of cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6 BT136
Tj / C
VGT(Tj)
VGT(25 C)
September 1997 3 Rev 1.200
Philips Semiconductors Product specification
Triacs BT139 series E
sensitive gate
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT139E
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5 3
0
10
20
30
40
50 BT139
VT / V
IT / A
Tj = 125 C
Tj = 25 C typ max
Vo = 1.195 V
Rs = 0.018 Ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10 BT139
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp
P
t
D
unidirectional
bidirectional
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3TRIAC
Tj / C
IH(Tj)
IH(25C)
0 50 100 150
1
10
100
1000
Tj / C
dVD/dt (V/us)
September 1997 4 Rev 1.200
Philips Semiconductors Product specification
Triacs BT139 series E
sensitive gate
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
September 1997 5 Rev 1.200
Philips Semiconductors Product specification
Triacs BT139 series E
sensitive gate
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 6 Rev 1.200
