BA679, BA679S
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-May-12 1Document Number: 85529
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RF PIN Diodes - Single in MiniMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART TYPE
DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL
CONSTRUCTION REMARKS
BA679 zr > 5 kBA679-GS18 or BA679-GS08 - Single diode Tape and reel
BA679S zr > 9 kBA679S-GS18 or BA679S-GS08 - Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR30 V
Forward continuous current IF50 mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air on PC board
50 mm x 50 mm x 1.6 mm RthJA 500 K/W
Junction temperature Tj125 °C
Storage temperature range Tstg - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 20 mA VF1V
Reverse current VR = 30 V IR0.05 μA
Diode capacitance f = 100 MHz, VR = 0 V CD0.5 pF
Differential forward resistance f = 100 MHz, IF = 1.5 mA rf50
Reverse impedance f = 100 MHz, VR = 0 V BA679 zr5k
BA679S zr9k
Minority carrier lifetime IF = 10 mA, IR = 10 mA 4μs
BA679, BA679S
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-May-12 2Document Number: 85529
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Differential Forward Resistance vs. Forward Current
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
0 0.4 0.81.2 1.6
0.01
0.1
1
10
100
2.0
95 9735
I- Forward Current (mA)
F
VF- Forward Voltage (V)
Tamb= 25 °C
Scattering Limit
0.001 0.01 0.1 1
1
10
100
1000
10 000
10
95 9734
I
F
- Forward Current (mA)
f > 20 MHz
T
j
= 25 °C
r
f
- Differential Forward Resistance (Ω)
- 80
- 60
- 40
- 20
0
20
a - Typical Cross Modulation Distortion (dB)
f2, modulated with 200 kHz, m = 100 % (MHz)
806040200
95 9733
- Circuit with 10 dB Attenuation
V0=40dBmV
f1= 100 MHz unmodulated
Π
BA679, BA679S
www.vishay.com Vishay Semiconductors
Rev. 1.8, 16-May-12 3Document Number: 85529
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max. 1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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