PD - 91437B IRF9540N HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.117 G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew -23 -16 -76 140 0.91 20 430 -11 14 -5.0 -55 to + 175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.50 --- 1.1 --- 62 C/W 5/13/98 IRF9540N Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -100 --- --- -2.0 5.3 --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- --- --- --- --- --- --- --- 15 67 51 51 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1300 400 240 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.117 VGS = -10V, ID = -11A -4.0 V VDS = V GS, ID = -250A --- S VDS = -50V, ID = -11A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 97 ID = -11A 15 nC VDS = -80V 51 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -23 showing the A G integral reverse --- --- -76 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 7.1mH RG = 25, IAS = -11A. (See Figure 12) ISD -11A, di/dt -470A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. IRF9540N 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A ) -ID , D rain-to-S ou rc e C urre nt (A ) TO P 10 -4 .5V 2 0 s P U LS E W ID TH T Jc = 2 5C A 1 0.1 1 10 10 -4 .5V 2 0 s P U LS E W ID TH T JC = 1 75 C 1 100 0.1 1 -VD S , D rain-to-S ourc e V oltage (V ) Fig 2. Typical Output Characteristics 2.5 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) -I D , D rain-to -So urc e C urre nt (A ) 100 TJ = 25 C TJ = 1 7 5C 10 1 V DS = -2 5 V 2 0 s P U L S E W ID TH 4 5 6 7 8 9 -VG S , Ga te -to-Source Volta ge (V) Fig 3. Typical Transfer Characteristics A 100 -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics 0.1 10 10 A I D = -19 A 2.0 1.5 1.0 0.5 VG S = -1 0V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (C ) Fig 4. Normalized On-Resistance Vs. Temperature IRF9540N V GS C is s C rs s C o ss C , Capacitance (pF) 2500 2000 = = = = 20 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd -V G S , G ate-to-S ource V oltage (V ) 3000 C iss 1500 C oss 1000 C rss 500 0 10 V D S = -80 V V D S = -50 V V D S = -20 V 16 12 8 4 FO R TE S T CIR C U IT S E E FIG U R E 1 3 0 A 1 I D = -1 1A 100 0 -VD S , D rain-to-S ourc e V oltage (V ) 40 60 80 A 100 Q G , Total G ate C harge (nC ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) -I D , D rain C urrent (A ) -I S D , Reverse D rain Current (A ) 20 10 T J = 17 5C T J = 2 5C 1 V G S = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VS D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.6 100 10 0s 10 1m s T C = 25 C T J = 17 5C S ing le P u lse 1 1 10m s A 10 100 1000 -VD S , D rain-to-S ourc e V oltage (V ) Fig 8. Maximum Safe Operating Area IRF9540N RD VDS 25 VGS D.U.T. RG - I D , Drain Current (A) 20 + VDD -10V Pulse Width 1 s Duty Factor 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 td(on) 5 tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 90% VDS Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRF9540N L VDS D .U .T RG -2 0 V tp VD D A IA S D R IV E R 0 .0 1 15V Fig 12a. Unclamped Inductive Test Circuit IAS E A S , S ingle Pulse Avalanc he E nergy (m J) 1200 TOP 1000 B O T TO M ID -4 .7A -8 .1A -11 A 800 600 400 200 0 A 25 50 75 100 125 150 175 S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRF9540N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ ISD ] IRF9540N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A - -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 6.47 (.25 5) 6.10 (.24 0) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 3 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) 0 .3 6 (.01 4) 3X M B A M 0.55 (.02 2) 0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB : IS TH IS A ISN AIR N F IR E X AEMXPA LMEP :L ETH 1 0F1 1 00 1 0 W ITAHS SAESMS BE LMYB L Y W ITH C EO D9EB 1M 9B1M L O TL OCTO D A INRTE A TIO IN TE N ARTNIO N A LN A L R E C TIF R E C TIFIE R IE R 10 1 0 IR F IR 1 0F10 L O GL O G O 9 2 4962 4 6 9B 9B1 M 1 M A S SAESMSBE LMYB L Y C EO D E L OTL O TC O D A NB U EMRB E R P A RPTA RNTU M D A TE D A TE C O DC EO D E (Y Y W (Y Y W W ) W ) Y Y Y=Y Y=E AYRE A R W WW =W W= EW E KE E K WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/