BYC10-600CT,127"" - WEEN SEMICONDUCTOR(HONG KONG)CO.,LIMITED

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset

Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which

will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown

below.

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If you have any questions related to this document, please contact our nearest sales office via e-

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Thank you for your cooperation and understanding,

WeEn Semiconductors

DDATA SHEET

Product specification March 2001

DISCRETE SEMICONDUCTORS

BYC10-600CT

Dual rectifier diode

ultrafast, low switching loss

NXP Semiconductors Product specification

Rectifier diode BYC10-600CT

ultrafast, low switching loss

FEATURES SYMBOL QUICK REFERENCE DATA

• Dual diode VR = 600 V

• Extremely fast switching

• Low reverse recovery current VF ≤ 1.75 V

• Low thermal resistance

• Reduces switching losses in IO(AV) = 10 A

associated MOSFET

trr = 19 ns (typ)

APPLICATIONS PINNING SOT78 (TO220AB)

• Active power factor correction PIN DESCRIPTION

• Half-bridge lighting ballasts

• Half-bridge/ full-bridge switched 1 anode 1

mode power supplies.

2 cathode

The BYC10-600CT is supplied in

the SOT78 (TO220AB) 3 anode 2

conventional leaded package.

tab cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRRM Peak repetitive reverse voltage - 600 V

VRWM Crest working reverse voltage - 600 V

VRContinuous reverse voltage Tmb ≤ 110 ˚C - 500 V

IO(AV) Average output current (both δ = 0.5; with reapplied VRRM(max); - 10 A

diodes conducting) Tmb ≤ 50 ˚C1

IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 10 A

per diode Tmb ≤ 50 ˚C1

IFSM Non-repetitive peak forward t = 10 ms - 40 A

current per diode t = 8.3 ms - 44 A

sinusoidal; Tj = 150˚C prior to surge

with reapplied VRWM(max)

Tstg Storage temperature -40 150 ˚C

TjOperating junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance junction to per diode - - 2.5 K/W

mounting base both diodes - - 2.2 K/W

Rth j-a Thermal resistance junction to in free air. - 60 - K/W

ambient

a1 a2

123

tab

1 Tmb(max) limited by thermal runaway

March 2001 1 Rev 1.200

1;3 Semiconductors Product specification

Rectifier diode BYC10-600CT

ultrafast, low switching loss

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C, per diode unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFForward voltage IF = 5 A; Tj = 150˚C - 1.4 1.75 V

IF = 10 A; Tj = 150˚C - 1.75 2.2 V

IF = 5 A; - 2.0 2.9 V

IRReverse current VR = 600 V - 9 100 μA

VR = 500 V; Tj = 100 ˚C - 0.9 3.0 mA

trr Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs - 30 50 ns

trr Reverse recovery time IF = 5 A; VR = 400 V; - 19 - ns

dIF/dt = 500 A/μs

trr Reverse recovery time IF = 5 A; VR = 400 V; - 25 30 ns

dIF/dt = 500 A/μs; Tj = 100˚C

Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 0.7 3 A

dIF/dt = 50 A/μs; Tj = 125˚C

Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 8 11 A

dIF/dt = 500 A/μs; Tj = 125˚C

Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/μs-911V

Fig.1. Typical application, output rectifier in boost

converter power factor correction circuit. Continuous

conduction mode, where the transistor turns on whilst

forward current is still flowing in the diode.

Fig.2. Typical application, freewheeling diode in half

bridge converter. Continuous conduction mode, where

each transistor turns on whilst forward current is still

flowing in the other bridge leg diode.

Vin Vo = 400 V d.c.

500 V MOSFET

150 uH

OUTPUT DIODE

typ

Vin Vin = 400 V d.c.

inductive load

IFIR

March 2001 2 Rev 1.200

1;3 Semiconductors Product specification

Rectifier diode BYC10-600CT

ultrafast, low switching loss

Fig.3. Maximum forward dissipation per diode as a

function of average forward current; rectangular

current waveform where IF(AV) =IF(RMS) x √D.

Fig.4. Typical reverse recovery switching losses per

diode, as a function of rate of change of current dIF/dt.

Fig.5. Typical switching losses in transistor due to

reverse recovery of diode, as a function of of change

of current dIF/dt.

Fig.6. Origin of switching losses in transistor due to

diode reverse recovery.

Fig.7. Typical reverse recovery time trr, per diode as a

function of rate of change of current dIF/dt.

Fig.8. Typical peak reverse recovery current per

diode, Irrm as a function of rate of change of current

dIF/dt.

012345678

D = 1.0

0.5

0.2

0.1

BYC5-600

Rs = 0.09 Ohms

Vo = 1.3 V

150

137.5

125

112.5

Average forward current, IF(AV) (A)

Forward dissipation, PF (W) Tmb(max) C

D =

tptp

time

ID Irrm

dIF/dt ID = IL

losses due to

diode reverse recovery

100 1000

0.05

0.1

0.15

0.2

BYC5-600

f = 20 kHz

Rate of change of current, dIF/dt (A/us)

Diode reverse recovery switching losses, Pdsw (W)

IF = 5 A

10 A

7.5 A

Tj = 125 C

VR = 400 V

100 1000

100 BYC5-600

Rate of change of current, dIF/dt (A/us)

Reverse recovery time, trr (ns)

10 A 7.5 A

IF = 5 A

Tj = 125 C

VR = 400 V

100 1000

BYC5-600

Rate of change of current, dIF/dt (A/us)

Transistor losses due to diode reverse recovery, Ptsw (W)

f = 20 kHz

Tj = 125 C

VR = 400 V

IF = 5 A

7.5 A

10 A

100 1000

100 BYC5-600

Rate of change of current, dIF/dt (A/us)

Peak reverse recovery current, Irrm (A)

Tj = 125 C

VR = 400 V

IF = 5 A

10 A

March 2001 3 Rev 1.200

1;3 Semiconductors Product specification

Rectifier diode BYC10-600CT

ultrafast, low switching loss

Fig.9. Definition of reverse recovery parameters trr, Irrm

Fig.10. Typical forward recovery voltage per diode, Vfr

as a function of rate of change of current dIF/dt.

Fig.11. Definition of forward recovery voltage Vfr

Fig.12. Typical and maximum forward characteristic

per diode, IF = f(VF); Tj = 25˚C and 150˚C.

Fig.13. Typical reverse leakage current per diode as

a function of reverse voltage. IR = f(VR); parameter Tj

Fig.14. Maximum thermal impedance per diode,

Zth j-mb as a function of pulse width.

Qs100%

10%

time

Irrm

trr

01234

10 BYC5-600

Forward voltage, VF (V)

Forward current, IF (A)

maxtyp

Tj = 25 C

Tj = 150 C

0 50 100 150 200

20 BYC5-600

Tj = 25 C

Rate of change of current, dIF/dt (A/ s)

Peak forward recovery voltage, Vfr (V)

typ

IF = 10 A

0 100 200 300 400 500 600

1uA

10uA

100uA

1mA

10mA

100mA BYC5-600

Reverse voltage (V)

Reverse leakage current (A)

Tj = 125 C

100 C

75 C

50 C

25 C

time

Vfr

1us 10us 100us 1ms 10ms 100ms 1s 10s

0.001

0.01

0.1

BYV29

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

March 2001 4 Rev 1.200

1;3 Semiconductors Product specification

Rectifier diode BYC10-600CT

ultrafast, low switching loss

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

10,3

max

3,7

2,8

3,0

3,0 max

not tinned

1,3

max

(2x)

123

2,4

0,6

4,5

max

5,9

min

15,8

max

1,3

2,54 2,54

0,9 max (3x)

13,5

min

March 2001 5 Rev 1.200

NXP Semiconductors

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and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document co ntains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the product specification.

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