MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING Dimensions in mm __ 85, s0202 19 0.5201 | + Or = il == | | Yt >< | i eo} <j | 2 3| bop ll | st Oe a 3 lH 3) | GOMAX IR! PN i | i 0.5 0.2 | Ha e251 25.) 08 | | ware <b GATE 2.5V DRIVE = DRAIN 33 SOURCE @VDSS cccr cette cece tet eee teeta eee eee nee 60V @) DRAIN @ OS (ON) (MAX) vere r ete terete tere renee e reer ees 73mQ WD cece ence cnet cence tenet ete ee tet eter seenetnnene 410A @ |ntegrated Fast Recovery Diode (TYP.) :----- 55ns MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (tc = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Ves = OV 60 Vv Vass Gate-source voltage Vos = 0V 410 Vv Ip Drain current . 10 A {DM Drain current (Pulsed) 40 A Iba Avalanche drain current (Pulsed) | L = 100uH 10 A Is Source current 10 A (SM Source current (Pulsed) 40 A Po Maxirnum power dissipation 30 Ww Tes Channel temperature -55 ~ +150 C Tstg Storage temperature ~5 ~ +150 C =~ Weight Typical value 0.26 g 2 - 106 te MisuBSH ELECTRIC ELECTRICAL CHARACTERISTICS (tch = 25C) MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE Limits Symbol Parameter Test conditions . am Unit Min. Typ. Max. V (BR) DSS | Drain-source breakdown voltage | ID = {mA, VDS = OV 60 Vv lass Gate leakage current VGs = +10V, Vos = OV _ 40.1 LA IDss Drain current Vos = 60V, Vas = OV _ 0.1 mA VGS (th) Gate-source threshold voltage lp = 1mA, Vos = T0V 0.6 0.9 1.2 v TDS (ON) _| Drain-source on-state resistance | io = 5A, Vas = 4V _ 54 73 mo ros (ON) | Drain-source on-state resistance | !D = 5A, VGS = 2.5V 64 95 mQ Vos (On) | Drain-source on-state voltage | Ip = 5A, VGS = 4V _ 0.27 0.365 v | yts | Forward transfer admittance Ip = 5A, VDS = 5V _ 18 _ $ Ciss Input capacitance _ 1150 _ pF Coss Output capacitance Vbs = 10V, Vas = OV, f = 1MHz _ 185 pF Crss Reverse transfer capacitance 80 _ pF td (on) Turn-on delay time 19 _ ns tr Rise time | 465 _ ns - Vdb = 30V, ip = 5A, VGS = 4V, RGEN = Ras = 509 td (off) Turn-off delay time ; 90 _ ns ti Fall time _ 65 _ ns Vso Saurce-drain voltage is = 5A, Vas = OV _ 1.0 1.5 V Rth (ch-c)_| Thermal resistance Channel to case _ _ 4.17 CAN tr Reverse recovery time is = 10A, dis/dt = -100A/us _ 55 _ ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 50 5 = 10 3 tw = 10us = 2 e 40 Z 101 z 8 3 2 30 z 2 i Z 100 a 7 z QA 20 oO oO z 3 a < 2 WW x = 10 5 10-71 o 7 a. SE Tc = 26C 3 Single Pulse % 50 100 150 200 25 3.571009 23 57101 23 57102 2 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vps {V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 20 Vos = 5V 4V 3V Vas = 5V 4V 3V 2.5V Toh = 25C : , Tch = 25C Pulse Test 7 Pulse Test = i = < 16 <= 8 a 8 5 412 5 6 i WW cc jaa s s 3G 8 So 4 z Z < < x 5 4 5 2 0 0 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 107 ELECTRIC MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) 0 1 Teh = 25C To = 28C w } Pulse Test us Pulse Test qa Vas = 2.5V eo E 80 Se gE i De Dz zs ze Ow oO a 60 uu 3 wr 4aV @ fw Ww 39 Bz 40 Oe Qe Za Zb E> eu 20 4a aon 0 0 0 1.0 2.0 3.0 4.0 5.0 3 57100 23 57101 23 57102 23 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (FYPICAL) (TYPICAL) 102 Toh = 25C 7 Vos = 5V Vos = 10V To= Pulse Test Pulse Test 5 < ae 4 2 i 3 Ee g 2 2 FS 10 xc az ? qa 7 5 =F z SE 5 3 cz x rae 3 2 0 10 0 1.0 2.0 3.0 4.6 5.0 109 2 345 710' 2 345 7104 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ib (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 4 3 10 10) Toh = 25C 5 7 VoD = 30V 3 3 Vas = 4V BQ Ri = RAGS = 500 c 2 2 3 GEN S og 1% wo Zo T = <5 5 - oe 3 g 402 a 5 2 = 7 Sg 108 e 4 6 OZ = 35 5 tdton} 3} Teh = 25C 2 Okt = IMHZ 4 Ves = 0V 401 3.57160 23 57101 23 5710? 23 yoo 06.2 63 45 7101 2345 7102 DRAIN-SOQURCE VOLTAGE Vos (} DRAIN CURRENT Ip (A) 2 ~ 108 MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS.GATE CHARGE : FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) 9 49 > Teoh = 26C Vas = 0V D Ip = 10A Pulse Test 40 Vos = 10V < 40 a 3 i To = 125C <= =a at 5 ec S a if > Q 2.0 O 16 Na wi 2 Oo Oo a a 3 ul 1.0 Qo 8 \u a zw oO Q 0 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE Vsp (V) ~ ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. So 2 CHANNEL TEMPERATURE CHANNEL TEMPERATURE =la (TYPICAL) (TYPICAL) |Z 10 2.0 Qloa 7 Ves = 10V Vos = 10V ~/2 5 Ip = 1/2ip QO ID=imA WW Pulse Test al sy 4 B. 16 e|zZ 3 az Ee) st w= oli 2 aa B| 2 TA 12 aH 8 . ae |W -> Lut & 10 iw ERIE 7 ow fic 539 08 Sih Ss or Zig 4 HI S15 3 uO Ww > 25 | be my 0.4 a\|9 2 oO 5) i 5|2 a|2 =| 2 10-1 a = 5 ~-50 0 50 100 150 ~50 0 50 100 150 xc 8/5 CHANNEL TEMPERATURE Teh (C) CHANNEL TEMPERATURE Tech (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE (TYPICAL) CHARACTERISTICS 102 Vas = 0V 7 ID= 1mA 5 3 2 107 5}0=1.0 370.5 2 0.2 409 M 7 0.1 ARCS 0 Pe 3 0.02 D= 2 01 10-1 Single Pulse 40423 5710-323 5710-223 5710-123 5710023 5710123 57102 0.4 ~50 0 50 100 150 DRAIN-SOURCE BREAKDOWN VOLTAGE V (Bry pss (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (ga) 08s (25C) TRANSIENT THERMAL IMPEDANCE 92th (ch--c) (C/W) CHANNEL TEMPERATURE Tech (C) PULSE WIDTH tw {8) MITSUBISHI 2 ~ 109 ELECTRIC