File Number 1579 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V fos(On) = 1.8Q and 2.50 Features: SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier device The IRF720, {RF721, IRF722 and ItRF723 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 N-CHANNEL ENHANCEMENT MODE 6O s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- ee) = DRAIN sistors requiring high speed and low gate-drive power. C These types can be operated directly from integrated [_ circuits. TOP VIEW GATE The !RF-types are supplied in the JEDEC TO-220AB plastic 92cs-39528 package. JEDEC TO-220AB Absolute Maximum Ratings Parameter IAF720 IRF721 IRF722 IRF723 Units. Vos Drain - Source Voltage (D 400 350 400 350 v VoGr Drain - Gate Voltage (Rgg = 20 KO) @ 400 350 400 350 Vv Ip @Te = 25C Continuous Drain Current 3.0 3.0 2.5 2.5 A Ip @ Te = 100C Continuous Drain Current 2.0 2.9 15 1S A 'pa Pulsed Drain Current @ 12 12 10 10 A Ves Gate - Source Voltage 20 v Pp @ Te = 25C Max. Power Dissipation ao {See Fig. 14) w Linear Derating Factor 0.32 (See Fig. 14) wee tim Inductive Current, Clamped (See Fig. 15 and 16) L = 100gH A 12 I 12 10 t 10 u Operating Junction and 55 to 150 c stg Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) * Cc 3-179Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 Electrical Characteristics @Tc = 25C (Uniess Otherwise Specified) Parameter Type Min, Typ. | Max. Units Teast Conditions BVpss _Orain - Source Breakdown Voltage IRF720 | gog _ _ Vv Ves = OV (RF722 IRF721 = IRF723 350 - - v Ip = 250pA Vosith) Gate Threshold Voltage ALL 2.0 _ 4.0 v . Vos = Vgs- ip = 250pA 'gss Gate-Source Leakage Forward ALL = = 500 nA Ygs = 20V Igg Gate-Source Leakage Reverse ALL = |-500 nA Vv -20V GSS GS loss Zero Gate Voltage Drain Current AU = = 250 nA Vos = Max. Rating. Veg = OV t =] [1000 [4a Vps = Max Rating 0.8, Vag = OV. To = 125C Ipion) _ On-State Drain Current @ IRF720 | 39 _ _ A (RF721 . Vos? 'pion) * Rosion) max. Ves * 10 1RF722 | og | _ _ A IRF723 . RoSton) Static Drain-Source On-State IRF720 _ 15 18 2 Resistance iRF721 . . Vas = 10V.Ip = 1.54 mera | Cl a los | oss umipe tRF723 . . | Of Forward Transconductance ALL 1.0 | 2.0 - $ (a) Vos > "pion *Fosion max. 'p = 1-4 Cigs Input Capacitance ALL = 450 = pF Vos = OV, Vpg = 25V, f = 1.0MHz Cass Output Capacitance ALL - 100 _ pF See Fig. 10 Criss Reverse Transfer Capacitance ALL = 20 = pF tgion) _ Turn-On Delay Time ALL ~ | 20 [| 40 ns Vop * 0-5 BVpgg. Ip = 1-54. Z, = SOR th Rise Time ALL = 25 50 ns See Fig. 17 ta (ott) Turn-Off Delay Time ALL - 50. 100 ns (MOSFET switching times are essentially Fall Time ALL _ 25 60 ns independent of operating temperature.) Q, Total Gate Charge Ve6s5 * 10V. Ip = 4.0A. Voce = 0.8 Max. Rating. _ GS o DS {Gate-Source Plus Gate-Drain) ALL 12 1s ne See Fig. 18 for test circuit. (Gate charge is essentially Qos Gate-Source Charge ALL - 6.0 9.0 ac indent of operating temperature.) | Sga Gate-Drain (Miller) Charge ALL - 6.0 9.0 ac Lo. Internal Drain inductance - 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL i - 4.6 _ nH Measured trom the drain lead, 6mm (0.25 o in.) from package to center of die. i ks internal Source Inductance ALL ~ 75 - aH Measured from the source lead, 6mm G (0.25 in.) from package to source bonding pad. s Thermal Resistance Rihuc Junction-to-Case ALL = = 3.12 | c/w Fincs __Case-to-Sink ALL = 1.0 _ oc sw Mounting surface flat, smooth, and greased. Rinse Junction-to-Ambient AUL = = 80 C/W Free Air Operation Source-Drain Diode Ratings and Characteristics 15 Continuous Source Current IRF720 _ ~ | 30 A Modified MOSFET symbol (Body Diode) IRF721 ~ showing the integral D IRF722 reverse P-N junction rectifier, we723 | ~ | | 28] 4A Ism Pulse Source Current IRF720 _ _ 12 A G (Body Diode} @ IRF729 s IRF722 IRF723 _ _ to A Vsp _ Diode Forward Voltage @ RE720 _ _ 16 v Te = 25C, Ig = 3.08. Vgg = OV IRF722 = = = IRF723 - ~ 1S v Tc = 25C. Ig = 2.58. Veg = OV ter Reverse Recovery Time AlL - 450 a ns Ty = 10C, Ip = 3.0A, digidt = 100 Arps Gra Reverse Recovered Charge ALL ~ 3.4 _ ae Ty = 150C, tp = 3.0A, digsdt = 100 Alps ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. @Ty = 25C to 180C. 3-180 @ Putse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Therma} Impedance Curve |Fig. 5}Zynaclt/Ayysc. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE {PER UNIT) REMY (aMPrAcsy 6 S ow s n 2 2 = a 0.02 0.01 19-8 Ip, DRAIN CL 100 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 4 8 2 16 Vos, DRAIN-TO-SQUACE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics PULSE THEAMAL IMPEDANCE} 2 5 ye 2 5 10-3 300 Ip, ORAIN CURRENT {AMPERES} 10-2 Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 40 us PULSE TEST tort Vos> x g = gi 2 = < = 5 & = = s 3 z = 5 Ss 0 1 2 3 5 6 Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics 50 OPERATION IN THIS AREA(S LIMITED. 8Y Roston) nN s a 02 17 1509C MAX. Ainge * 3.12C/W 01 005 1002 5 Ww 20 $0 100 200 500 Vpg. GRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area feet | ~tz 1. DUTY FACTOR, O= 7 . 2. PER UNIT BASE = Rinjc = 3.12 DEG. CW. 3. Tym > Te = Pom Zencltl. 2 St 2 5 10 2 5 10 ty, SQUARE WAVE PULSE OURATION (SECONDS) Fig. 5 Maxi Effective Tr Thermal { A. J ion-to-Case Vs. Pulse Duration 3-181Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 Wys PULSE 3S t 1 Vos > !p{on) * Rosion} on S ~ on ts, TRANSCONDUCTANCE (SIEMENS) lpn, REVERSE ORAIN CURRENT (AMPERES) = 2500 1.0 0 1 2 3 4 5 6 Q ; 2 3 4 Ip. DRAIN CURRENT (AMPERES) Vgp, SOURCE-TO-ORAIN VOLTAGE {VOLTS} Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage = ~ nd Boston}. DRAIN-TO-SQUACE ON RESISTANCE (NORMALIZED) s a 8os, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 02 9 40 a0 120 160 -40 0 a0 80 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 ~ Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature C, CAPACITANCE (pF) Vgg. GATE-TO-SOUACE VOLTAGE (VOLTS) ip *4a FOR TEST CIRCUIT 18 a 10 20 30 40 50 Q 4 a 12 16 20 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Oy. TOTAL GATE CHARGE inC) Fig. 10 Typicat Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 3-182PULSE GENERATOR r Boston} MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL) Vgg = 10v Vgs = 20 3 Apsion). DRAIN-TO-SOURCE ON RESISTANCE (OHMS) % 1 4 & & a Ig, ORAIN CURRENT (AMPERES; 2 Fig. 12 Typical On-Resistance Vs. Drain Current 40 Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 IRF722, Ip, ORAIN CURRENT (AMPERES) 0 wb 50 1B 100 Wh 180 Te, CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature LAN | | ro 44 Pp. POWER DISSIPATION (WATTS) 8 \ 0 20 4g 60 Tc, CASE TEMPERATURE (C) 80 100 120 140 Fig. 14 Power Vs. Temperature Derating Curve VARY ty TO G8TAIN REQUIRED PEAK 1, Eye ADJUSTBL OE] TO OBTAIN SPECIFIED Ip $A, TO SCOPE t son 3 0.0182 HIGH FREQUENCY wae aad SHUNT Fig. 17 Switching Time Test Circuit O.58Vpss SE" Ve = 0.7580s5 Fig. 16 Clamped Inductive Waveforms O Nos (SQLATED SUPPLY} CURRENT REGULATOR SAME TYPE AS OUT fT, Q2pt 50 Kid 12v BATTERY | CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit ee 3-183