2SK2770-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 3.5 14 35 3.5 364 100 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=54.5mH, Vcc=90V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=35V VDS=0V ID=2.0A VGS=10V 900 3.5 Tch=25C Tch=125C ID=2.0A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V 1.0 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. 4.0 10 0.2 10 4.0 2.0 450 75 40 20 40 50 25 Max. 4.5 500 1.0 100 5.5 680 120 60 30 60 80 40 3.5 1.0 1000 5.0 1.5 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.25 35.0 Units C/W C/W 1 2SK2770-01 FUJI POWER MOSFET Characteristics Safe operating area Power Dissipation PD=f(Tc) 120 ID=f(VDS):D=0.01,Tc=25C 100 t=0.01 s 10 1 1 s 80 ID [A] PD [W] 10s 60 DC 100 s 10 40 0 1ms t D= 20 t T 10ms T 0 0 50 100 10 150 100ms -1 10 0 10 1 10 o Tc [ C] 2 10 3 VDS [V] Typical transfer characteristic ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 10 n sig ID [A] ew n for 10 nd e mm 10 ot N o c e r 10 . de 1 0 -1 -2 0 1 2 3 4 5 6 7 8 9 10 VGS [V] Typical forward transconductance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 1 gfs [s] 10 10 10 0 -1 10 -1 10 0 10 1 ID [A] http://store.iiic.cc/ 2 2SK2770-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V 16 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 14 5.0 12 max. 4.0 8 VGS(th) [V] RDS(on) [ ] 10 max. 6 typ. min. 3.0 2.0 typ. 4 1.0 2 0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=3.5A,Tch=25C 10n 40 800 Typical capacitances C=f(VDS):VGS=0V,f=1MHz Vcc=720V 600 0V 35 18 c= 0V c V 45 V 0 72 30 500 25 700 de for C [F] 20 400 VGS [V] nd e mm 15 300 w ne Ciss 100p 200 180V 0 0 Coss 10 100 10 20 30 ot N 40 50 o c e r 60 70 Crss 5 10p 0 10 80 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode Avalanche energy derating IF=f(VSD):80s Pulse test,VGS=0V Eas=f(starting Tch):Vcc=90V,IAV=3.5A 400 350 10 1 300 o Tch=25 C typ. 10 10 Eas [mJ] 250 IF [A] VDS [V] 1n 450V . n sig 0 200 150 -1 100 50 10 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 50 100 150 o VSD [V] Starting Tch [ C] http://store.iiic.cc/ 3 2SK2770-01 1 10 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 0 Zthch-c [K/W] 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 t D= -2 10 -5 10 0.01 0 t T T -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4