Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
JTDB25
25 Watts, 36 Volts, Pulsed
Avionics, 960-1215 MHz
GENERAL DESCRIPTION
The JTDB25 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25ºC1 97W
Maximum Voltage and Current
BVCES 55V
BVEBO 3.5V
IC 5.0A
Maximum Temperatures
Storage Temperature -65 to +200ºC
Operating Junction Temperature +200ºC
CASE OUTLINE
55AW-1
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
BVEBO Emitter – Base Breakdown IE = 5 mA 3.5 V
BVCES Collector – Emitter Breakdown IC = 10 mA 55 V
hFE DC – Current Gain IC = 500mA, VCE = 5V 20
θJC
1 Thermal Resistance 1.8 ºC/W
FUNCTIONAL CHARAC TERISTICS @ 25°C
Pout Power Output F=960-1215 MHz 25 W
Pin Power Input Vcc = 36V 5 W
Gain Power Gain Pulse width = 10µs 7.0 7.5
RL Return Loss DF=40% 8 dB
VSWR
2
Load Mismatch Tolerance F = 1090 MHz 5:1
NOTES: 1. At Rated Pulse Conditions
2. At Rated Output Power
Rev A: Dec 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
