SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D www.onsemi.com The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341. C G E EC COLLECTOR (FLANGE) Features * * * * * * * G >100 kHz Operation 390 V, 20 A 200 kHz Operation 390 V, 12 A 600 V Switching SOA Capability Typical Fall Time 55 ns at TJ = 125C Low Conduction Loss Temperature Compensating SaberTM Model This is a Pb-Free Device TO-247-3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K 20N60A4D $Y &Z &3 &K 20N60A4D = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. (c) Semiconductor Components Industries, LLC, 2009 April, 2020 - Rev. 3 1 Publication Order Number: HGTG20N60A4D/D HGTG20N60A4D ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise specified) Parameter Symbol HGTG20N60A4D Unit BVCES 600 V IC25 IC110 70 40 A A ICM 280 A IFM110 20 A IFM 80 A Gate to Emitter Voltage Continuous VGES 20 V Gate to Emitter Voltage Pulsed VGEM 30 V Switching Safe Operating Area at TJ = 150C, (Figure 2) SSOA 100 A at 600 V Collector to Emitter Voltage Collector Current Continuous At TC = 25C At TC = 110C Collector Current Pulsed (Note 1) Diode Continuous Forward Current Diode Maximum Forward Current Power Dissipation Total at TC = 25C PD 290 W 2.32 W/C TJ, TSTG -55 to 150 C TL 260 C Power Dissipation Derating TC > 25C Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Symbol BVCES ICES Test Condition Min Typ Max Unit 600 - - V TJ = 25C - - 250 mA TJ = 125C - - 2.0 mA TJ = 25C - 1.8 2.7 V IC = 250 mA, VGE = 0 V VCE = 600 V Collector to Emitter Saturation Voltage VCE(SAT) IC = 20 A, VGE = 15 V Gate to Emitter Threshold Voltage VGE(TH) IC = 250 mA, VCE = 600 V TJ = 125C Gate to Emitter Leakage Current IGES VGE = 20 V 250 nA - A - 8.6 - V VGE = 15 V - 142 162 nC VGE = 20 V - 182 210 nC - 15 - ns - 12 - ns - 73 - ns - 32 - ns - 105 - mJ - 280 350 mJ - 150 200 mJ - 15 21 ns - 13 18 ns - 105 135 ns - 55 73 ns VGEP IC = 20 A, VCE = 300 V On-State Gate Charge Qg(ON) IC = 20 A, VCE = 300 V Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25C, ICE = 20 A, VCE = 390 V, VGE = 15 V, RG = 3 W, L = 500 mH, Test Circuit Figure 24 Current Fall Time tfI Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 Turn-Off Energy (Note 2) EOFF Current Turn-On Delay Time td(ON)I Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I tfI V - Gate to Emitter Plateau Voltage trI V 7.0 - TJ = 150C, RG = 3 W, VGE = 15 V, L = 100 mH, VCE = 600 V td(OFF)I 2.0 5.5 - SSOA Current Rise Time 1.6 100 Switching SOA Current Turn-Off Delay Time - 4.5 IGBT and Diode at TJ = 125C, ICE = 20 A, VCE = 390 V, VGE = 15 V, RG = 3 W, L = 500 mH, Test Circuit Figure 24 Turn-On Energy (Note 3) EON1 - 115 - mJ Turn-On Energy (Note 3) EON2 - 510 600 mJ Turn-Off Energy (Note 2) EOFF - 330 500 mJ www.onsemi.com 2 HGTG20N60A4D ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) (continued) Parameter Symbol Diode Forward Voltage Test Condition VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RqJC Min Typ Max Unit IEC = 20 A - 2.3 - V IEC = 20 A, dIEC/dt = 200 A/ms - 35 - ns IEC = 1 A, dIEC/dt = 200 A/ms - 26 - ns IGBT - - 0.43 C/W Diode - - 1.9 C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. TYPICAL PERFORMANCE CURVES (unless otherwise specified) 120 VGE = 15 V 80 PACKAGE LIMIT 60 40 20 0 25 75 50 100 125 TJ = 150C, RG = 3 W, VGE = 15 V, L = 100 mH 100 80 60 40 20 0 150 0 TC, CASE TEMPERATURE (C) TC 75C VGE 15 V 300 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.43C/W, SEE NOTES TJ = 125C, RG = 3 W, L = 500 mH, VCE = 390 V 40 5 10 20 30 200 300 400 500 600 700 Figure 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC, SHORT CIRCUIT WITHSTAND TIME (ms) fMAX, OPERATING FREQUENCY (kHz) Figure 1. DC COLLECTOR CURRENT vs. CASE TEMPERATURE 500 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 40 14 VCE = 390 V, RG = 3 W, TJ = 125C 400 12 I SC 10 300 6 250 t SC 0 10 200 150 2 ICE, COLLECTOR TO EMITTER CURRENT (A) 350 8 4 50 450 11 12 13 14 100 15 VGE, GATE TO EMITTER VOLTAGE (V) Figure 3. OPERATING FREQUENCY vs. COLLECTOR TO EMITTER CURRENT Figure 4. SHORT CIRCUIT WITHSTAND TIME www.onsemi.com 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) DIE CAPABILITY ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, DC COLLECTOR CURRENT (A) 100 HGTG20N60A4D TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 100 DUTY CYCLE < 0.5%, VGE = 12 V PULSE DURATION = 250 ms ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 100 80 60 40 TJ = 125C 20 0 TJ = 25C TJ = 150C 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 DUTY CYCLE < 0.5%, VGE = 15 V PULSE DURATION = 250 ms 80 60 40 TJ = 125C 20 0 3.2 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) EOFF, TURN-OFF ENERGY LOSS (mJ) EON2, TURN-ON ENERGY LOSS (mJ) RG = 3 W, L = 500 mH, VCE = 390 V TJ = 125C, VGE = 12 V, VGE = 15 V 800 600 400 200 0 0 TJ = 25C, VGE = 12 V, VGE = 15 V 10 15 20 25 30 35 40 800 700 500 trI, RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) RG = 3 W, L = 500 mH, VCE = 390 V TJ = 125C, VGE = 12 V or 15 V 200 100 0 0 TJ = 25C, VGE = 12 V or 15 V 10 15 16 14 TJ = 25C or TJ = 125C, VGE = 15 V 10 28 25 30 25 30 35 40 TJ = 125C or TJ = 25C, VGE = 12 V 24 20 16 12 TJ = 25C or TJ = 125C, VGE = 15 V 8 20 20 RG = 3 W, L = 500 mH, VCE = 390 V 32 18 15 2.8 300 36 TJ = 25C or TJ = 125C, VGE = 12 V 10 2.4 Figure 8. TURN-OFF ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT RG = 3 W, L = 500 mH, VCE = 390 V 5 2.0 ICE, COLLECTOR TO EMITTER CURRENT (A) 22 8 1.6 400 Figure 7. TURN-ON ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 12 1.2 600 ICE, COLLECTOR TO EMITTER CURRENT (A) 20 0.8 Figure 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1200 1000 0.4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1400 TJ = 25C TJ = 150C 35 4 40 ICE, COLLECTOR TO EMITTER CURRENT (A) 5 10 15 20 25 30 35 40 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN-ON DELAY TIME vs. COLLECTOR TO EMITTER CURRENT Figure 10. TURN-ON RISE TIME vs. COLLECTOR TO EMITTER CURRENT www.onsemi.com 4 HGTG20N60A4D 120 80 RG = 3 W, L = 500 mH, VCE = 390 V 110 VGE = 12 V, VGE = 15 V, TJ = 125C 100 90 80 VGE = 12 V, VGE = 15 V, TJ = 25C 70 60 RG = 3 W, L = 500 mH, VCE = 390 V 72 tfI, FALL TIME (ns) td(OFF)I, TURN-OFF DELAY TIME (ns) TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 64 TJ = 125C, VGE = 12 V or 15 V 56 48 40 TJ = 25C, VGE = 12 V or 15 V 32 24 5 10 15 20 25 30 35 16 40 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VCE = 10 V PULSE DURATION = 250 ms 200 160 120 TJ = 25C 80 TJ = 125C TJ = -55C 40 0 6 7 8 9 11 10 15 12 16 12 VCE = 600 V 10 ICE = 30 A 1.0 0.8 ICE = 20 A 0.6 0.4 ICE = 10 A 0.2 0 25 50 75 100 125 40 VCE = 400 V VCE = 200 V 6 4 2 0 0 20 40 60 80 100 120 140 160 Figure 14. GATE CHARGE WAVEFORMS RG = 3 W, L = 500 mH, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF 1.2 35 QG, GATE CHARGE (nC) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 1.4 30 8 Figure 13. TRANSFER CHARACTERISTIC 1.6 25 IG(REF) = 1 mA, RL = 15 W, TJ = 25C 14 VGE, GATE TO EMITTER VOLTAGE (V) 1.8 20 Figure 12. FALL TIME vs. COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) Figure 11. TURN-OFF DELAY TIME vs. COLLECTOR TO EMITTER CURRENT 240 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 10 ICE = 30 A 1 ICE = 20 A ICE = 10 A 0.1 150 TJ = 125C L = 500 mH, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF TC, CASE TEMPERATURE (C) 3 10 100 RG, GATE RESISTANCE (W) Figure 15. TOTAL SWITCHING LOSS vs. CASE TEMPERATURE Figure 16. TOTAL SWITCHING LOSS vs. GATE RESISTANCE www.onsemi.com 5 1000 HGTG20N60A4D TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 2.2 FREQUENCY = 1 MHz VCE, COLLECTOR TO EMITTER VOLTAGE (V) C, CAPACITANCE (nF) 5 4 3 CIES 2 COES 1 0 CRES 0 20 40 60 80 DUTY CYCLE < 0.5%, TJ = 25C PULSE DURATION = 250 ms, 2.1 2.0 ICE = 30 A ICE = 20 A 1.9 1.8 ICE = 10 A 1.7 8 100 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 90 DUTY CYCLE < 0.5% PULSE DURATION = 250 ms 25 20 125C 15 25C 10 5 0 0 0.5 1.0 1.5 2.0 40 30 25C trr 20 25C ta 10 25C tb 0 Qrr, REVERSE RECOVERY CHARGE (nc) trr, RECOVERY TIMES (ns) 800 125C tb 25C ta 25C tb 300 400 500 600 700 800 125C ta 50 4 8 12 20 16 Figure 20. RECOVERY TIMES vs. FORWARD CURRENT 30 0 200 16 IEC, FORWARD CURRENT (A) 125C ta 10 15 125C tb 60 0 IEC/dt = 20 A, VCE = 390 V 20 14 125C trr Figure 19. DIODE FORWARD CURRENT vs. FORWARD VOLTAGE DROP 40 13 70 VEC, FORWARD VOLTAGE (V) 50 12 dIEC/dt = 200 A/ms 80 3.0 2.5 11 Figure 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs. GATE TO EMITTER VOLTAGE trr, RECOVERY TIMES (ns) IEC, FORWARD CURRENT (A) Figure 17. CAPACITANCE vs. COLLECTOR TO EMITTER VOLTAGE 30 10 VGE, GATE TO EMITTER VOLTAGE (V) 900 VCE = 390 V 125C, ICE = 20 A 600 125C, ICE = 10 A 400 25C, ICE = 20 A 200 25C, ICE = 10 A 0 200 1000 300 400 500 600 700 800 900 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/ms) diEC/dt, RATE OF CHANGE OF CURRENT (A/ms) Figure 21. RECOVERY TIMES vs. RATE OF CHANGE OF CURRENT Figure 22. STORED CHARGE vs. RATE OF CHANGE OF CURRENT www.onsemi.com 6 HGTG20N60A4D ZqJC, NORMALIZED THERMAL RESPONSE TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 100 0.5 0.2 10-1 0.1 t1 0.05 PD 0.02 0.01 t2 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x ZqJC x RqJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 t1, RECTANGULAR PULSE DURATION (s) Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE TEST CIRCUIT AND WAVEFORMS HGTG20N60A4D DIODE TA49372 90% 10% VGE EOFF L = 500 mH RG = 3 W EON2 VCE 90% DUT + - VDD = 390 V 10% ICE Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT t d(OFF)I t fI t rI t d(ON)I Figure 25. SWITCHING TEST WAVEFORMS www.onsemi.com 7 HGTG20N60A4D HANDLING PRECAUTIONS FOR IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDt LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC) / RqJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON2 and EOFF are defined in the switching waveforms shown in Figure . EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ORDERING INFORMATION Part Number HGTG20N60A4D NOTE: Package Brand Shipping TO-247 20N60A4D 450 Units / Tube When ordering, use the entire part number. Saber is a registered trademark of Sabremark Limited Partnership. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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