Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD100HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 176.5 W
Pin Input power Zg=Zl=5012.5 W
ID Drain current - 25 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 0.85 °C/W
Note 1: Above parameters are guaranteed independently.
OUTLINE DRAWING
9.6+/-0.3
3.3+/-0.2
4-C2
10.0+/-0.3
R1.6+/-0.15
24.0+/-0.6
18.5+/-0.3
5.0+/-0.3
3
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
2
4.5+/-0.7
6.2+/-0.7
0.1
+0.05
-0.01
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
2
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V
Pout Output power f=30MHz ,VDD=12.5V 100 110 - W
DDrain efficiency Pin=7W, Idq=1.0A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=100W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
3
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
0
40
80
120
160
200
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
CHANNEL DISSIPATION Pch(W)
...
Vds VS. Crss CHARACTERISTICS
0
10
20
30
40
0 10 20 30
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
100
200
300
400
500
0 10 20 30
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
50
100
150
200
250
300
0 10 20 30
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8 10
Vds(V)
Ids(A)
Ta=+25°C
Vgs=5.7V
Vgs=5.4V
Vgs=5.1V
Vgs=4.8V
Vgs=4.2V
Vgs=6V
Vgs=4.5V
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
01234567
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
4
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
0
10
20
30
40
50
0 10 20 30 40
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
100
ηd(%)
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=1A
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS
0
20
40
60
80
100
120
0 2 4 6 8 10
Pin(W)
Pout(W) , Idd(A)
20
30
40
50
60
70
80
ηd(%)
Po
ηd
Idd
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=1A
Vdd-Po CHARACTERISTICS
0
20
40
60
80
100
120
140
4 6 8 10 12 14
Vdd(V)
Po(W)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
Idd(A)
Po
Idd
Ta=25°C
f=30MHz
Pin=7W
Idq=1A
Zg=ZI=50 ohm
Vgs-Ids CHARACTERISTICS 2
0
2
4
6
8
10
0 1 2 3 4 5 6 7
Vgs(V)
Ids(A)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
5
TEST CIRCUIT(f=30MHz)
5mm
1000pF
220pF
Pin
4.7K ohm
C1 C1 330μF,50V
9.1K ohm
L1
1000pF POUT
Vgg Vdd
C1：100pF,0.022μF,0.1μF in parallel Dimensions:mm
Note:Board material PTFE substrate
Micro strip line width=4.2mm/50
C1
220pF
20pF
20pF
4.7 ohm
19
30
68
75
90
93
100
4.5
18
21
24
43
50
53
180pF 200pF
180pF 200pF 82pF 82pF
82pF 82pF C1
10μF,50V
82pF 330pF 82pF
82pF 330pF 82pF
56
93
100
12
8
14
L1: 8 Turns,I.D8mm,D1.6mm silver plateted copper wire
L2: 10 Turns,I.D8mm,D1.6mm silver plateted copper wire
L3: 5 Turns,I.D6mm,D0.7mm copper wire P=1mm
L4: 1 Turns,I.D10mm,D1.6mm silver plateted copper wire
L3
L4
L2
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
6
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
30 8.86-j14.31 0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W
f=30MHz Zout
f=30MHz Zin
Zo=10
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
7
RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
10
-158.6
31.451
94.8
5.2
-162.1
30
-171.1
10.628
79.3
-9.9
-171.6
50
-172.9
71.0
-20.7
-171.4
100
-173.9
54.1
-34.1
-171.4
150
-175.1
40.2
-27.8
-173.6
200
-176.4
31.6
-36.9
-174.3
250
-177.3
24.5
-54.4
-176.2
300
-178.2
20.1
-30.4
-177.4
350
-179.3
15.2
13.1
-178.3
400
-179.8
13.4
-18.0
-179.8
450
8.5
45.3
500
6.8
42.3
550
5.2
78.6
600
4.8
80.1
650
1.0
72.0
700
-1.3
61.3
750
0.6
67.2
800
-4.0
82.2
850
-1.9
78.7
900
-5.4
69.9
950
4.1
86.8
1000
-8.7
78.7
S11 S21 S12 S22
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
8
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have
a possibility to receive a burn to touch the operating product directly or touch the product
until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
his products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
details
regarding operation of these products from the formal specification sheet. For
copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
(RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and
In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about
predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
It is
recommended to utilize a sufficient sized heat-
sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products
lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
the
supplementary items in the specification sheet.
8.
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
< Silicon RF Power MOS FET (Discrete) >
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Publication Date : Oct．2011
9
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
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designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
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