DZT5551 160V NPN VOLTAGE TRANSISTOR IN SOT223 Features * * * * * * * * * Mechanical Data BVCEO > 160V BVEBO > 6V IC = 600mA Continuous Collector Current Low Saturation Voltage (150mV max @10mA) hFE specified up to 50mA for a high gain hold up Complementary PNP Type: DZT5401 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability * * * * * * Case: SOT223 Case material: molded plastic. "Green" molding compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (approximate) Applications * * High Voltage Amplification Applications High Voltage Switching SOT223 Top View Device Schematic Pin-Out Top View Reel size (inches) 13 Tape width (mm) 12 Ordering Information (Note 4) Part Number DZT5551-13 Notes: Marking K4N Quantity per reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com Marking Information (Top View) YWW DZT5551 Document number: DS31219 Rev. 3 - 2 K4N = Product type marking code = Manufacturer's code marking YWW = Date code marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 1 of 7 www.diodes.com November 2012 (c) Diodes Incorporated DZT5551 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Value 180 160 6 600 1 Unit V V V mA A Symbol PD RJA RJL TJ, TSTG Value 2 62.5 34.05 -55 to +150 Unit W C/W C/W C Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range Notes: 5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition 6. Thermal resistance from junction to solder-point (at the end of the collector lead). DZT5551 Document number: DS31219 Rev. 3 - 2 2 of 7 www.diodes.com November 2012 (c) Diodes Incorporated DZT5551 Max Power Dissipation (W) IC Collector Current (A) Thermal Characteristics and Derating Information 1 V CE(sat) Limited 100m DC 1s 100ms 10m Single Pulse Tamb=25C 10ms 1ms 50mmx50mmx1.6mm 1oz Copper 1m 100s 1 10 100 VCE Collector-Emitter Voltage (V) 2.00 1.75 1.50 50mmx50mmx1.6mm 1.25 1oz Copper 1.00 0.75 0.50 0.25 0.00 0 20 Safe Operating Area 100 120 140 160 Single Pulse =25C amb Maximum Power (W) Thermal Resistance (C/W) 80 100 T 50mmx50mmx1.6mm 1oz Copper 50 40 D=0.5 30 20 60 Temperature (C) Derating Curve 70 60 40 D=0.2 Single Pulse D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Document number: DS31219 Rev. 3 - 2 =25C amb 1oz Copper 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance DZT5551 T 50mmx50mmx1.6mm 3 of 7 www.diodes.com Pulse Power Dissipation November 2012 (c) Diodes Incorporated DZT5551 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 270 200 7.85 <1 -- <1 -- -- -- 50 50 50 V V V nA A nA IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = +100C VEB = 4V, IC = 0 IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 1mA, VCE = 5V IC = 10mA, VCE = 5V IC = 50mA, VCE = 5V Collector Cutoff Current ICBO Emitter Cutoff Current IEBO 180 160 6.0 -- -- -- Collector-Emitter Saturation Voltage VCE(sat) -- -- 65 115 150 200 mV mV Base-Emitter Saturation Voltage VBE(sat) -- -- 760 840 1000 1200 mV mV hFE 80 80 30 130 145 65 -- 250 -- -- Transition Frequency fT 100 130 300 MHz Small Signal Current Gain hfe 50 -- 260 -- Cobo -- -- 6 pF NF -- -- 8 dB t(d) t(r) t(s) t(f) -- -- -- -- 95 64 1256 140 -- -- -- -- ns ns ns ns Test Condition ON CHARACTERISTICS (Note 7) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Noise Figure Delay Time Rise Time Storage Time Delay Time Notes: VCE = 10V, IC = 10mA, f = 100MHz VCE = 10V, IC = 10mA, f = 1kHz VCB = 10V, f = 1MHz VCE = 5.0V, IC = 200A, RS = 1.0k, f = 1.0kHz VCC = 10V, IC = 10mA, IB1 = -IB2 = 1mA 7. Pulse Test: Pulse width 300s. Duty cycle 2.0%. DZT5551 Document number: DS31219 Rev. 3 - 2 4 of 7 www.diodes.com November 2012 (c) Diodes Incorporated DZT5551 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 0.7 1 Tamb=25C IC/IB=10 0.6 VCE(SAT) (V) VCE(SAT) (V) 0.5 IC/IB=50 100m IC/IB=20 100C 0.3 25C 0.2 -55C 0.1 IC/IB=10 1m 150C 0.4 10m 0.0 10m 100m IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1.2 Ta=25C VCE=5V Normalised Gain 1.4 1.2 1.0 0.8 100C 150 25C 100 0.6 0.4 -55C 50 0.2 0.0 100 1m 10m IC/IB=10 200 0 100m 1.0 VBE(SAT) (V) 150C Typical Gain (hFE) 1.6 0.6 0.4 0.2 1m 100C 150C 10m 100m IC Collector Current (A) hFE v IC VCE=5V -55C 25C 0.8 IC Collector Current (A) 1.0 100m IC Collector Current (A) VBE(SAT) v IC -55C VBE(ON) (V) 25C 0.8 0.6 100C 150C 0.4 1m 10m 100m IC Collector Current (A) VBE(ON) v IC DZT5551 Document number: DS31219 Rev. 3 - 2 5 of 7 www.diodes.com November 2012 (c) Diodes Incorporated DZT5551 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Y2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 X2 DZT5551 Document number: DS31219 Rev. 3 - 2 6 of 7 www.diodes.com November 2012 (c) Diodes Incorporated DZT5551 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com DZT5551 Document number: DS31219 Rev. 3 - 2 7 of 7 www.diodes.com November 2012 (c) Diodes Incorporated