DZT5551-13 - DIODES INC - Datasheet.Directory

DZT5551

Document number: DS31219 Rev. 3 - 2 1 of 7

www.diodes.com November 2012

DZT5551

160V NPN VOLTAGE TRANSISTOR IN SOT223

Features

• BVCEO > 160V

• BVEBO > 6V

• I

C = 600mA Continuous Collector Current

• Low Saturation Voltage (150mV max @10mA)

• h

FE specified up to 50mA for a high gain hold up

• Complementary PNP Type: DZT5401

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Applications

• High Voltage Amplification Applications

• High Voltage Switching

Mechanical Data

• Case: SOT223

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DZT5551-13 K4N 13 12 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com

Marking Information

Top View Pin-Out Top View

Device Schematic

SOT223

K4N = Product type marking code

= Manufacturer’s code marking

YWW = Date code marking

Y = Last digit of year ex: 7 = 2007

WW = Week code 01 - 52

YWW

(Top View)

DZT5551

Document number: DS31219 Rev. 3 - 2 2 of 7

www.diodes.com November 2012

DZT5551

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 180 V

Collector-Emitter Voltage VCEO 160 V

Emitter-Base Voltage VEBO 6 V

Continuous Collector Current IC 600 mA

Peak Collector Current ICM 1 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) PD 2 W

Thermal Resistance, Junction to Ambient (Note 5) R

JA 62.5 °C/W

Thermal Resistance, Junction to Leads (Note 6) R

JL 34.05 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition

6. Thermal resistance from junctio n to solder-point (at the end of the collector lead).

DZT5551

Document number: DS31219 Rev. 3 - 2 3 of 7

www.diodes.com November 2012

DZT5551

Thermal Characteristics and Derating Information

1 10 100

10m

100m

50mmx50mmx1.6mm

1oz Copper

Singl e Pulse

Tamb=25°C

VCE(sat)

Limited

100µs

1ms

10ms

100ms

Safe O p erating A rea

IC Co l l e cto r Cu rr en t (A)

VCE Collector-Emitter Voltage (V) 0 20 40 60 80 100 120 140 160

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

50mmx50mmx1.6mm

1oz Copper

D e ra ting Curve

Temperatu re (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

70 Tamb=25°C

50mmx50mmx1.6mm

1oz Copper

Transient Thermal Im ped an ce

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Th ermal R esi stan ce (°C/ W )

Puls e Width (s ) 100µ 1m 10m 100m 1 10 100 1k

100 Sing le Pulse

Tamb=25°C

50mmx50mmx1.6mm

1oz Copper

Pulse Power Dissipation

Puls e Width (s)

Maximum Power (W)

DZT5551

Document number: DS31219 Rev. 3 - 2 4 of 7

www.diodes.com November 2012

DZT5551

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage BVCBO 180 270 — V

IC = 100µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 7) BVCEO 160 200 — V IC = 1mA, IB = 0

Emitter-Base Breakdown Voltage BVEBO 6.0 7.85 — V IE = 100µA, IC = 0

Collector Cutoff Current ICBO —

—

50 nA

µA VCB = 120V, IE = 0

VCB = 120V, IE = 0, TA = +100°C

Emitter Cutoff Current IEBO — <1 50 nA

VEB = 4V, IC = 0

ON CHARACTERISTICS (Note 7)

Collector-Emitter Saturation Voltage VCE(sat) —

—

115 150

200 mV

mV IC = 10mA, IB = 1mA

IC = 50mA, IB = 5mA

Base-Emitter Saturation Voltage VBE(sat) —

— 760

840 1000

1200 mV

mV IC = 10mA, IB = 1mA

IC = 50mA, IB = 5mA

DC Current Gain hFE 80

130

145

—

250

— — IC = 1mA, VCE = 5V

IC = 10mA, VCE = 5V

IC = 50mA, VCE = 5V

SMALL SIGNAL CHARACTERISTICS

Transition Frequency fT 100 130 300 MHz

VCE = 10V, IC = 10mA,

f = 100MHz

Small Signal Current Gain hfe 50 — 260 —

VCE = 10V, IC = 10mA,

f = 1kHz

Output Capacitance Cobo —— 6 pF

VCB = 10V, f = 1MHz

Noise Figure NF — — 8 dB VCE = 5.0V, IC = 200µA,

RS = 1.0kΩ, f = 1.0kHz

Delay Time t

(

)

—95 — ns VCC = 10V, IC = 10mA,

IB1 = -IB2 = 1mA

Rise Time t

(

)

—64 — ns

Storage Time t

(

)

—1256 — ns

Delay Time t

(

)

—140 — ns

Notes: 7. Pulse Test: Pulse width ≤ 300µs. Duty cycle ≤ 2.0%.

DZT5551

Document number: DS31219 Rev. 3 - 2 5 of 7

www.diodes.com November 2012

DZT5551

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m

100m

10m 100m

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

100µ 1m 10m 100m

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m 10m 100m

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m

0.4

0.6

0.8

1.0

100

150

200

VCE(SAT) v IC

Tamb=25°C

IC/IB=50

IC/IB=20

IC/IB=10

VCE(SAT) (V)

IC Col l ector C urr e nt (A)

150°C

VBE(SAT) v IC

IC/IB=10

100°C

25°C

-55°C

VCE(SAT) (V)

IC Co l l e ctor Current (A)

150°C

hFE v IC

Ta=25°C

VCE=5V

-55°C

25°C

100°C

Normalised Gain

IC Coll e ctor C urrent (A)

150°C

25°C

VCE(SAT) v IC

IC/IB=10

100°C

-55°C

VBE(SAT) (V)

IC Coll e ctor Curren t (A)

150°C

VBE(ON) v IC

VCE=5V

100°C

25°C -55°C

VBE(ON) (V )

IC Coll e ctor Curren t (A)

Typical Gain (hFE)

DZT5551

Document number: DS31219 Rev. 3 - 2 6 of 7

www.diodes.com November 2012

DZT5551

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT223

Dim Min Max Typ

A 1.55 1.65 1.60

A1 0.010 0.15 0.05

b1 2.90 3.10 3.00

b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50

E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

Dimensions Value (in mm)

X1 3.3

X2 1.2

Y1 1.6

Y2 1.6

C1 6.4

C2 2.3

DZT5551

Document number: DS31219 Rev. 3 - 2 7 of 7

www.diodes.com November 2012

DZT5551

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

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This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.