AY Sicsossemomes 2N4918 2N4919/2N4920 MEDIUM POWER PNP SILICON TRANSISTOR a 2N4918 AND 2N4920 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N4918, 2N4919 and 2N4920 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, intended for driver circuits switching and amplifier applications. 2 SOT-32 INTERNAL SCHEMATIC DIAGRAM Co (2) (1) B EO (3) 5CO8610 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N4918 2N4919 2N4920 Vcso |Collector-Base Voltage (le = 0) -40 -60 -80 Vv Vceo |Collector-Emitter Voltage (lp = 0) -40 -60 -80 Vv Veso |Emitter-Base Voltage (Ic = 0) -5 Vv Ic Collector Current - A lom Collector Peak Current -3 A lB Base Current A Ptot |Total Dissipation at Tc < 25 C 30 w Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C October 1995 1/4 2N4918/2N4919/2N4920 THERMAL DATA Rthj-case |Thermal Resistance Junction-case Max | 4.16 C/W | ELECTRICAL CHARACTERISTICS (Tease = 25 C unlessotherwise specified) Symbol Parameter Test Conditions Min. | Typ. Max. Unit IcBo Collector Cut-off Voce = rated Vceo -100 HA Current (le = 0) IcEx Collector Cut-off Voce = rated Vceo -100 HA Current (Vee =-1.5V) |Vce =rated Vcceo Te = 125 C -500 uA IcEO Collector Cut-off for 2N4918 Vcp = -20 V -500 HA Current (Ip = 0) for 2N4919 Vcg = -30 V -500 HA for 2N4920 =Vcs = -40 V -500 HA leBo Emitter Cut-off Current |Vexg =-5 V -1 mA (Ic = 0) VcEo(sus)* | Collector-Emitter Ic =-10 mA Sustaining Voltage for 2N4918 -40 Vv for 2N4919 -60 Vv for 2N4920 -80 Vv Voce\saty* | Collector-Emitter lo=-1A Ip =-0.1 A -0.6 V Saturation Voltage VeBeE(sat)* |Base-Emitter Ilc=-1A Ig =-0.1 A 1.3 V Saturation Voltage VBe* Base-Emitter Voltage Ic=-1A Vce=-1V -1.3 Vv hfe Small Signal Current Ic = -250 MA VcE=-10 Vf = 1KHz 25 Gain fr Transition frequency Ic = -250 MA Vce =-10 V f= 1MHz 3 MHz CcBo Collector Base le =0 Vep = -10 V f = 1KHz 100 pF Capacitance Pulsed: Pulse duration = 300 pis, dutycycle 1.5% 2/4 AS] Sicpon scmoncs 2N4918/2N4919/2N4920 SOT-32 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 bt 0.49 0.75 0.019 0.030 Cc 2.4 2.7 0.04 0.106 cl 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G 3 3.2 0.118 0.126 H 2.54 0.100 C A i r a Le r po] q z= a a il inl La cl 8 | P 1b AL bt e 0016114 3/4 MITROELECTROMICS 2N4918/2N4919/2N4920 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compments in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 AS] Sicpon scmoncs