Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
64 83
89 120
RθJL 53 70
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
±12Gate-Source Voltage
Drain-Source Voltage 30
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
6
30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.5
1
-55 to 150
TA=70°C
ID
8
AO4832
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
VDS (V) = 30V
ID = 8 A (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 17mΩ (VGS = 4.5)
RDS(ON) < 23mΩ (VGS = 2.5V)
General Description
The AO4832 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. Standard Product
A
O4832 is Pb-free (meets ROHS & Sony 259
specifications). AO4832L is a Green Product ordering
option. AO4832 and AO4832L are electrically identical.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1 G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO8816
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS ±100 nΑ
VGS(th) 0.6 1 1.4 V
ID(ON) 30 A
12.2 15
TJ=125°C 17 21
13 17 mΩ
17.6 23 mΩ
gFS 23 S
VSD 0.73 1 V
IS2.5 A
Ciss 1130 pF
Coss 170 pF
Crss 125 pF
Rg1.5 Ω
Qg14 nC
Qgs 1.65 nC
Qgd 5.5 nC
tD(on) 5.7 ns
tr4.8 ns
tD(off) 36 ns
tf7ns
trr 23 ns
Qrr 16 nC
20
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=15V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=8A
Gate Source Charge
mΩ
VGS=4.5V, ID=5A
IS=1A,VGS=0V
VDS=5V, ID=8A
VGS=2.5V, ID=4A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current VDS=0V, VGS=±12V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
Reverse Transfer Capacitance
IF=8A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO8816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.73
0
10
20
30
012345
VDS(Volts)
Figure 1: On-Regions Characteristics
ID(A)
VGS =1.5V
VGS =2V
3V
10V 5V
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
25°C
125°C
VGS=5V
10
12
14
16
18
20
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON)(mΩ)
VGS =10V
VGS =4.5V
VGS =2.5V
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalize ON-Resistance
VGS=4.5V
ID=5A
VGS=2.5V
ID=4A
VGS=10V
ID=8A
10
15
20
25
30
35
40
0246810
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON)(mΩ)
25°C
125°C
ID=8A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
IS(A)
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO8816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.73
0
1
2
3
4
5
0 5 10 15
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS(Volts)
VDS=15V
ID=8A
0
400
800
1200
1600
2000
0 5 10 15 20
VDS(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Crss
Coss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Ton T
P
D
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0
.1
s
1s
1
0s
D
C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
