H2e- FEF (rh He FER CTIPP 115) TIPP11G TIPP17 > PNP DARLINGTON-CONNECTED SILECT TRANSISTOR TOQ92 PACKAGE. 1.25W POWER DISSIPATION IN FREE AIR. 2A CURRENT HANDLING. 1O0V CAPABILITY. FOR COMPLEMENTARY USE WITH TIPP115, TIPP116, TIPP117. MINIMUM HFE OF 500 AT 2A. MECHANICAL SPECIFICATION TO-92 4 725 *2.5max Collector 0.45 Er: r t 3.7max pt cm A = 4.05 Emitter 0.4 4.7max 4.7max |. 12. 7min | ECR All dimensions are in mm *Solderability not controlled in this area ABSOLUTE MAXIMUM RATINGS AT 25C FREE AIR TEMPERATURE (UNLESS OTHERWISE NOTED} TIPP115 TIPP116 TIPP117 Collector-Base Voltage 60V 80V 100V Cotlector-Emitter Voltage (1) 60V 80V 100V Emitter-Base Voltage 5V 5V 5V Continuous Collector Current <_- 2A -_______ Peak Collector Current (2) < 4A > Continuous Base Current ~< 50mA Continuous Device Dissipation at (ar below) 25C Free Air Temperature t 1.25W > Operating Collector Junction Temperature Range ~~- -56C TO 150C Storage Temperature Range + -55C TO 150C -_ Lead Temperature 1.6 mm from Case ~t 260C > for 10 secs NOTES: (1) These values apply when the Base-Emitter Diode is open citcuit. (2) This value applies for TW <0.3ms, D.C. < 10%. e On Peurmnen that shay are Urge 1 \ -areengament TEXAS INSTRUMENTS trans mttoumenrs sen GAT 10 MAKE CHANGES 47 amy TIME LIMITED TMPROVE DESIGN AND [0 SUPRLY THE DEST PAGOUCT POSSIBLE TIPP115, TIPP116, TIPP117 PNP DARLINGTON-CONNECTED SILECT TRANSISTOR ELECTRICAL CHARACTERISTICS AT 25C FREE AIR TEMPERATURE TIPP115 TIPP116 TIPP117 PARAMETERS CONDITIONS MIN | MAX | MIN |MAX | MIN |MAX/UNIT V{BR}CEOCollector-Emitter [IC =30mA IB=0 (3) 60 80 100 Vv Breakdown Voltage VCE =30V 1B =0 2 ICEO Collector Cutoff [yee =aoy 18-0 2 mA Current VCE = 50V IB=0 2 VCB=s0V IE =0 1 ICBO Collector Cutoff VCB =80V I[E=0 1 mA Cc t ueren VCB = 100V IE=0 1 1EBO Emitter Cutoff VEB=5V !IC=0 2 2 2 | mA Current Static Forward VCE=4V [C= 1A (3); 1000 1000 1000 hFE Current Transfer Ratio VCE=4V IC = 2A (3)| 500 500 500 VBE Base-Emitter VCE=4V_ IC = 2A {3) 2.8 2.8 2.8 V Voltage VCE(SAT) Collector-Emitter |IB=8mA IC = 2A (3) 2.5 2.5 2.5 Vv NOTES: (3) These Parameters must be measured using pulse techniques. TW = 300us, D.C. < 2% In addition any test of 1 amp and above must be measured using voltage sensing contacts separate from thecurrent carrying contacts and located within 3.2mm from the device body. a UNITED KINGDOM FRANCE GERMANY ITALY Texas Instruments Limited Texas Instruments France Texas Instruments Texas Instruments Manton Lane Boite Postale 5 Deutschland G.m.b.H. Semiconduttari Italia S.P.A. Bedford MK41 7PA 06270 Villeneuve Loubet Haggertystrasse 17 Viale delle Scienze, 1 Tel. (0234) 67466 Tel. (93) 200101 8050 FREISING Cittaducale, Rieti Telex 82178 Telex 470127 Tel. 08161-800. Telex 526529 Tel. 0746'6941. Telex 611003 PDS 85 11-81 Printed by Inprint of Luton (Designers & Printers} Utd, Luton, Engiand