BF259
High Voltage Power Transistors
Page 1 31/05/05 V1.0
TO-39 Metal Can Package
Pin Configuration
1. Emitter
2. Base
3. Collector
Dimensions : Millimetres
Dimensions Minimum Maximum
A 8.50 9.39
B 7.74 8.50
C 6.09 6.60
D 0.40 0.53
E - 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
J 0.73 1.02
K 12.70 -
L 42° 48°
Application:
••Devices with breakdown voltages of 160V minimum.
••NPN Silicon High Voltage Power Transistors.
BF259
High Voltage Power Transistors
Page 2 31/05/05 V1.0
Absolute Maximum Ratings
Parameter Symbol BF259 Units
Collector Base Voltage VCBO
300
VCollector Emitter Voltage VCEO
Emitter Base Voltage VEBO 5
Collector Current-Continuous IC100
mA
Collector Current-Peak ICM 300
Power Dissipation at Ta= 25°C
Derate above 25°C PD
1
5.71 W
mW/°C
Power Dissipation at TC= 25°C
Derate above 25°C
5
28.57
Operating and Storage Junction
Temperature Range Tj, Tstg -65 to +200 °C
Thermal Characteristics
Junction to Ambient in Free Air Rth(j-a) 175
°C/W
Junction to Case Rth(j-c) 35
Electrical Characteristics (Ta= 25°C unless specified otherwise)
Parameter Symbol Test Condition BF259 Units
Collector Emitter Voltage VCEO IC = 10mA, IB= 0 >300
VCollector Base Voltage VCBO IC = 100µA, IE= 0 >300
Emitter Base Voltage VEBO IE = 100µA, IC= 0 >5
Collector Cut off Current ICBO VCBO = 250V, IE= 0 <50 nA
DC Current Gain hFE IC= 30mA, VCE = 10V 25 -
Collector Emitter Saturation Voltage VCE(Sat) IC= 30mA, IB= 6mA 1 V
Parameter Symbol Test Condition Typical Units
Transition Frequency ftIC= 15mA, VCE = 10V, f = 100MHz 75 MHz
Collector Base Capacitance Cob VCB = 30V, IE= 0, f = 1MHz 2.5 pF
Dynamic Characteristics
BF259
High Voltage Power Transistors
Page 3 31/05/05 V1.0
Specifications
VCEO
maximum
(V)
IC(av)
maximum
(A)
hFE
minimum
at IC = 30mA
VCE(Sat)
maximum (V)
at IC= 30mA
fT
minimum
(MHz)
Ptot
at 25°C
(mW)
Package and
Pin Out Type Part Number
300 0.1 25 1 75 500 TO-39 NPN BF259
For enquiries from all other markets
BF259
High Voltage Power Transistors
Page 4 31/05/05 V1.0
Notes:
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export
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