STEALTHt Diode 50 A, 600 V FFH50US60S-F085 Description The FFH50US60S-F085 is a STEALTHt diode optimized for low loss performance in output rectification. The STEALTH family exhibits low reverse recovery current(IRR),low VF and soft recovery under typical operating conditions. It has a low forward-voltage drop and is of silicon nitride passivated. This device is intended for use as a freewheel/clamping diode in various automotive switching power supplies and other power switching applications. Its low stored charge as well as Stealth and soft recovery characteristics minimize ringing and electrical noise while reduce the overall power loss. www.onsemi.com ANODE Features * * * * * CATHODE Stealth Recovery, trr = 163 ns ( Typ.) @ IF = 50 A) Low Forward Voltage( VF = 1.69 V (Max.) @ IF = 50 A ) Avalanche Energy Rated AEC-Q101 Qualified This Device is Pb-Free TO-247-2L MARKING DIAGRAM Applications * * * * $Y&Z&3&K 50US60S Automotive DCDC Converter Automotive On Board Charger Switching Power Supply Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 25 C) IF(AV) 50 A Non-repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 150 A Avalanche Energy (1 A, 40 mH) EAVL 20 mJ TJ, TSTG -55 to +175 C DC Blocking Voltage Operating Junction and Storage Temperature 1. Cathode Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2014 March, 2020 - Rev. 4 $Y &Z &3 &K 50US60S 1 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code 2. Anode ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FFH50US60S-F085/D FFH50US60S-F085 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tube Quantity FFH50US60S FFH50US60S-F085 TO247-2L - 30 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol IR Test Conditions Instantaneous Reverse Current VFM (Note 1) Instantaneous Forward Voltage trr (Note 2) Reverse Recovery Time ta tb Qrr VR = 600 V IF = 50 A Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Unit TC = 25C - - 100 mA TC = 175C - - 1000 mA TC = 25C - 1.27 1.69 V TC = 175C - 1.19 1.57 V IF = 1 A, di/dt = 200 A/ms, VR = 390 V TC = 25C - 41 82 ns IF = 50 A, di/dt = 200 A/ms, VR = 390 V TC = 25C - 163 - ns TC = 175C - 364 - ns IF = 50 A, di/dt = 200 A/ms, VR = 390 V TC = 25C - 65 98 886 - - - ns ns nC 1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2% 2. Guaranteed by design Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TEST CIRCUITS AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dlF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE VGE dIF Trr dt ta 0 VDD - IGBT t1 IF + tb 0.25I RM IRM t2 Figure 1. Trr Test Circuit Figure 2. Trr Waveforms and Definitions I=1A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)-VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD IL IL I V Q1 VDD DUT - t0 Figure 3. Avalanche Energy Test Circuit t1 t2 t Figure 4. Avalanche Current and Voltage Waveforms www.onsemi.com 2 FFH50US60S-F085 IF, Forward Current (A) IR, Reverse Current (mA) TYPICAL PERFORMANCE CHARECTERISTICS VF, Forward Voltage (V) VR, Reverse Voltage (V) Figure 6. Typical Reverse Current vs. Reverse Voltage Cj, Capacitances (pF) Trr, Reverse Recovery Time (ns) Figure 5. Typical Forward Voltage Drop vs. Forward Current di/dt (A/ms) Figure 7. Typical Junction Capacitance Figure 8. Typical Reverse Recovery Time vs. di/dt Irr, Reverse Recovery Current (A) IF(AV), Average Forward Current (A) VR, Reverse Voltage (V) TC, Case Temperature (5C) di/dt (A/ms) Figure 9. Typical Reverse Recovery Current vs. di/dt Figure 10. Forward Current Derating Curve www.onsemi.com 3 FFH50US60S-F085 Qrr, Reverse Recovery Charge (nC) TYPICAL PERFORMANCE CHARACTERISTICS (continued) di/dt, (A/ms) ZthJC, Thermal Response (t) Figure 11. Reverse Recovery Charge t1, Square Wave Pulse Duration (s) Figure 12. Transient Thermal Response Curve STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO-247-2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 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