FFH50US60S-F085 - ON SEMICONDUCTOR

March, 2020 − Rev. 4

1Publication Order Number:

FFH50US60S−F085/D

STEALTHt Diode

50 A, 600 V

FFH50US60S-F085

Description

The FFH50US60S−F085 is a STEALTHt diode optimized for low

loss performance in output rectification. The STEALTH family

exhibits low reverse recovery current(IRR),low VF and soft recovery

under typical operating conditions. It has a low forward−voltage drop

and is of silicon nitride passivated.

This device is intended for use as a freewheel/clamping diode

in various automotive switching power supplies and other power

switching applications. Its low stored charge as well as Stealth and soft

recovery characteristics minimize ringing and electrical noise while

reduce the overall power loss.

Features

•Stealth Recovery, trr = 163 ns ( Typ.) @ IF = 50 A)

•Low Forward Voltage( VF = 1.69 V (Max.) @ IF = 50 A )

•Avalanche Energy Rated

•AEC−Q101 Qualified

•This Device is Pb−Free

Applications

•Automotive DCDC Converter

•Automotive On Board Charger

•Switching Power Supply

•Power Switching Circuits

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage VRRM 600 V

Working Peak Reverse Voltage VRWM 600 V

DC Blocking Voltage VR600 V

Average Rectified Forward Current

(TC = 25 °C)

IF(AV) 50 A

Non−repetitive Peak Surge Current

(Halfwave 1 Phase 50 Hz)

IFSM 150 A

Avalanche Energy

(1 A, 40 mH)

EAVL 20 mJ

Operating Junction and Storage

Temperature

TJ, TSTG −55 to

+175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

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TO−247−2L

MARKING DIAGRAM

$Y&Z&3&K

50US60S

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

ANODE

CATHODE

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

50US60S = Specific Device Code

1. Cathode 2. Anode

FFH50US60S−F085

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PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Tube Quantity

FFH50US60S FFH50US60S−F085 TO247−2L −30

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

IRInstantaneous Reverse Current VR = 600 V TC = 25°C− − 100 mA

TC = 175°C− − 1000 mA

VFM

(Note 1)

Instantaneous Forward Voltage IF = 50 A TC = 25°C−1.27 1.69 V

TC = 175°C−1.19 1.57 V

trr

(Note 2)

Reverse Recovery Time IF = 1 A,

di/dt = 200 A/ms,

VR = 390 V

TC = 25°C−41 82 ns

IF = 50 A,

di/dt = 200 A/ms,

VR = 390 V

TC = 25°C−163 −ns

TC = 175°C−364 −ns

Qrr

Reverse Recovery Time

Reverse Recovery Charge

IF = 50 A,

di/dt = 200 A/ms,

VR = 390 V

TC = 25°C−65

886

−

1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%

2. Guaranteed by design

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TEST CIRCUITS AND WAVEFORMS

Figure 1. Trr Test Circuit Figure 2. Trr Waveforms and Definitions

Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Waveforms

I = 1 A

L = 40 mH

R < 0.1 W

EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]

Q1 = IGBT (BVCES > DUT VR(AVL))

IRM

VDD

IGBT

CURRENT

SENSE

DUT

−

dIF

Trr

tatb

0.25IRM

DUT

CURRENT

SENSE

VDD

−

VDD

Q1I

t0t1t2

VAVL

VGE AMPLITUDE AND

RG CONTROL dlF/dt

t1 AND t2 CONTROL IF

FFH50US60S−F085

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TYPICAL PERFORMANCE CHARECTERISTICS

Figure 5. Typical Forward Voltage Drop

vs. Forward Current

Figure 6. Typical Reverse

Current vs. Reverse Voltage

Figure 7. Typical Junction Capacitance Figure 8. Typical Reverse

Recovery Time vs. di/dt

IR, Reverse Current (mA)

VR, Reverse Voltage (V)

, Forward Current (A)

, Forward Voltage (V)

Trr, Reverse Recovery Time (ns)

di/dt (A/ms)

Cj, Capacitances (pF)

VR, Reverse Voltage (V)

Figure 9. Typical Reverse Recovery

Current vs. di/dt

Figure 10. Forward Current Derating Curve

IF(AV), Average Forward Current (A)

TC, Case Temperature (5C)

di/dt (A/ms)

Irr, Reverse Recovery Current (A)

FFH50US60S−F085

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 11. Reverse Recovery Charge

Qrr, Reverse Recovery Charge (nC)

di/dt, (A/ms)

Figure 12. Transient Thermal Response Curve

ZthJC, Thermal Response (t)

t1, Square Wave Pulse Duration (s)

STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

XXXX = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

ZZ = Assembly Lot Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

GENERIC

MARKING DIAGRAM*

AYWWZZ

XXXXXXX

TO−247−2LD

CASE 340CL

ISSUE A

DATE 03 DEC 2019

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98AON13850G

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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TO−247−2LD

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