PD - 95093A IRLR8103VPbF * * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D * 100% RG Tested * Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors. D-Pak S DEVICE CHARACTERISTICS The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. IRLR8103V 7.9 m RDS(on) QG QSW The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 27 nC 12 nC QOSS 29nC Absolute Maximum Ratings Parameter Symbol IRLR8103V Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain or Source Current TC = 25C (VGS > 10V) TC= 90C c TC = 25C Power Dissipation e TC = 90C Pulsed Drain Current Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current c Units V 91 ID A 63 363 IDM 115 PD TJ , TSTG 60 -55 to 150 IS 91 ISM 363 W C A Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case www.irf.com h eh Symbol Typ. Max. RJA --- 50 RJC --- 1.09 Units C/W 1 12/0604 IRLR8103VPbF Electrical Characteristics Parameter Symbol Min Typ Max Units Drain-to-Source Breakdown Voltage BVDSS 30 --- --- Static Drain-Source RDS(on) --- 6.9 9.0 On-Resistance Gate Threshold Voltage VGS(th) --- 1.0 7.9 --- 10.5 3.0 Drain-to-Source Leakage Current IDSS --- --- 50 --- --- 20 --- 100 --- 100 V m V A A Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 15A VGS = 4.5V, ID = 15A d d VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, TJ = 100C Gate-Source Leakage Current IGSS --- --- Total Gate Charge, Control FET QG --- 27 --- VGS = 5V, ID = 15A, VDS = 16V Total Gate Charge, Synch FET QG --- 23 --- VGS = 5V, VDS < 100mV Pre-Vth Gate-Source Charge QGS1 --- 4.7 --- Post-Vth Gate-Source Charge QGS2 --- 2.0 --- Gate to Drain Charge QGD --- 9.7 --- Switch Charge (Qgs2 + Qgd) QSW --- 12 --- Output Charge QOSS --- 29 --- Gate Resistance RG 0.8 --- 3.1 Turn-On Delay Time td(on) --- 10 --- VDD = 16V Rise Time tr --- 9 --- ID = 15A Turn-Off Delay Time td(off) --- 24 --- Fall Time tf --- 18 --- Input Capacitance Ciss --- 2672 --- Output Capacitance Coss --- 1064 --- Reverse Transfer Capacitance Crss --- 109 nA nC VGS = 20V VDS = 16V, ID = 15A VDS = 16V, VGS = 0 ns VGS = 5.0V Clamped Inductive Load pF VGS = 16V, VGS=0 --- Source-Drain Rating & Characteristics Parameter Diode Forward Voltage Reverse Recovery Charge f Symbol Min Typ Max Units d Conditions Qrr --- --- 0.9 103 1.3 --- V nC IS = 15A , VGS = 0V Qrr(s) --- 96 --- nC di/dt = 700A/s , (with 10BQ040) VSD di/dt ~ 700A/s VDS = 16V, VGS = 0V, IF = 15A Reverse Recovery Charge (with Parallel Schottky) f VDS= 16V, VGS = 0V, IF = 15A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. www.irf.com IRLR8103VPbF 1000 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 2.7V 10 2.7V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP TOP 1 10 20s PULSE WIDTH TJ = 150 C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 25 C TJ = 150 C 100 10 2.0 V DS= 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7.0 2.0 ID = 15A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR8103VPbF VGS = Ciss = Crss = Coss = C, Capacitance (pF) 4000 3000 6 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd VGS , Gate-to-Source Voltage (V) 5000 Ciss 2000 Coss 1000 0 ID = 15A 5 4 3 2 1 Crss 1 10 0 100 VDS , Drain-to-Source Voltage (V) 0 10 15 20 25 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 1000 ID , Drain Current (A) ISD , Reverse Drain Current (A) 5 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 150 C 10 10us 100 TJ = 25 C 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 V DS= 24V V DS= 15V 2.4 100us 1ms 10 1 10ms TC = 25 C TJ = 150 C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR8103VPbF LIMITED BY PACKAGE VGS D.U.T. RG 80 ID , Drain Current (A) RD V DS 100 + V DD - 10V 60 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 0 90% 25 50 75 100 125 TC , Case Temperature ( C) 150 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Effective Transient Transient Thermal Thermal Impedance, Impedance, Junction-to-Case Junction-to-Case www.irf.com 5 0.016 R DS(on) , Drain-to -Source On Resistance ( ) R DS ( on ) , Drain-to-Source On Resistance ( ) IRLR8103VPbF 0.014 0.012 VGS = 4.5V 0.010 VGS = 10V 0.008 0.006 0 50 100 150 200 250 300 0.014 0.012 0.010 ID = 15A 0.008 0.006 0.0 350 2.0 4.0 6.0 8.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 12V QG VGS 50K .2F QGS .3F D.U.T. + V - DS QGD VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 6 www.irf.com IRLR8103VPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in as sembly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 12 AS S EMBLY LOT CODE www.irf.com 34 DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S ITE CODE 7 IRLR8103VPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/