Solid State Devices, Inc.
14701 Fires tone Blvd * La Mir ad a, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-po wer.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1
/
SDR _
_
_
_
Screening
3
/
__ = N ot Screened
TX = TX Level
T X V = TX V
S = S Level
V
oltage
600 = 50V
601 = 100V
602 = 200V
603 = 300V
604 = 400V
605 = 500 V
606 = 600V
607 = 700V
608 = 800V
SDR600
Thru
SDR608
15 A, 45-60 nsec, 50-800 V
Ultra Fast Rectifier
Features:
Ultra Fast Recovery: 45-60 nsec Maximum
Low Reverse Leakage Current
Single Chip Construction
PIV to 800 Volts
Hermetically Sealed
High Surge Rating
Low Thermal Resistance
Also available in 2 Pin TO-59 or TO-111
Isolated Package upon request
TX, TXV, and Space Level Screening
Available
Maximum Ratings 2/ Symbol Value Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SDR600
SDR601
SDR602
SDR603
SDR604
SDR605
SDR606
SDR607
SDR608
VRRM
VRWM
VR
50
100
200
300
400
500
600
700
800
Volts
Average Rectified Forward Current
(Resi s ti ve Loa d , 6 0 Hz , Sine Wave, T
A
= 25°C) IO 15 Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25°C) IFSM 180 Amps
Operating & Storage Temperature TOP & TSTG -65 to +175 ºC
Maximum Thermal Resistance
(Junction t o Case) RθJC 2.5 ºC/W
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @ 25ºC.
3/ Screened to MIL-PRF-19500.
DO-4:
NOTE: All specifi cati ons are subj e ct to cha ng e wit hout noti fi ca ti on.
SCD's for these devices should be reviewed by SSDI prior to relea se. DATA SHEET #: RU0019C DOC
Solid State Devices, Inc.
14701 Fires tone Blvd * La Mir ad a, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-po wer.com * www.ssdi-power.com
SDR600
Thru
SDR608
Electrical Characteristics Symbol Value Units
Instantaneous Forward Volta
g
e Drop
(IF= 15 Adc, TA= 25ºC, 300 μs Pulse)
SDR600-605
SDR606-608 VF 1.3
1.8 VDC
Instantaneous Forward Volta
g
e Drop
(IF= 15 Adc, T = -55 ºC, 300 μs Pulse)
SDR600-605
SDR606-608
VF 1.45
1.95 VDC
Reverse Leakage Current
(Rated VR, TA= 25ºC, 300 µs minimum pulse) IR 50 µA
Reverse Leakage Current
(Rated VR, TA= 100ºC, 300 µs minimum pul se) IR 10 mA
Junction Capacitance
(VR= 10 VDC, TA= 25ºC, f= 1 MHz ) CJ 150 pF
Reverse Recover
Time
(IF= 500 mA, IR= 1 A, IRR= 250 mA, TA= 25ºC)
SDR600-605
SDR606
SDR607-608
tRR
45
50
60 nsec
Notes:
1/ For or dering i nformation, Pri ce, Operating Curves, and Avai lability- Contact Factory.
2/ Scre ened to MI L-PRF-19500.
3/ Unles s oth er wise s peci fie d, all Maxi mum Rati n gs /Ele ctr ical Cha ra ct e ristics @ 25º C.
Case Outline: DO-4
Stud: Cathode
Lead: Anode
NOTE: All specifi cati ons are subj e ct to cha ng e wit hout noti fi ca ti on.
SCD's for these devices should be reviewed by SSDI prior to relea se. DATA SHEET #: RU0019C DOC