Order this document by MJ10012/D SEMICONDUCTOR TECHNICAL DATA The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 400 Vdc (Min) * 175 Watts Capability at 50 Volts * Automotive Functional Tests COLLECTOR 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS BASE 1k 30 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIII IIII III IIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIII IIIIIIIII IIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIII III v IIIII IIIIIIIIIIIIIII IIIIIII EMITTER MAXIMUM RATINGS Rating Symbol MJ10012 MJH10012 Unit Collector-Emitter Voltage VCEO 400 Vdc Collector-Emitter Voltage (RBE = 27 ) VCER 550 Vdc Collector-Base Voltage VCBO 600 Vdc Emitter-Base Voltage VEBO 8.0 Vdc Collector Current -- Continuous -- Peak (1) IC 10 15 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD Operating and Storage Junction Temperature Range TJ, Tstg 175 100 1.0 118 47.5 1.05 Watts Watts W/_C - 65 to + 200 - 55 to + 150 _C CASE 1-07 TO-204AA (TO-3) MJ10012 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case RJC 1.0 0.95 _C/W TL 275 275 _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle Max Unit CASE 340D-01 TO-218 TYPE MJH10012 10%. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (Figure 1) (IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) VCEO(sus) 400 -- -- Vdc Collector-Emitter Sustaining Voltage (Figure 1) (IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER) VCER(sus) 425 -- -- Vdc Collector Cutoff Current (Rated VCER, RBE = 27 Ohms) ICER -- -- 1.0 mAdc Collector Cutoff Current (Rated VCBO, IE = 0) ICBO -- -- 1.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO -- -- 40 mAdc 300 100 20 550 350 150 -- 2000 -- -- -- -- -- -- -- 15 2.0 2.5 -- -- -- -- 2.5 3.0 OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 6 0 Vdc) (IC = 6.0 Adc, VCE = 6.0 Vdc) (IC = 10 Adc, VCE = 6.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (IC = 6.0 Adc, IB = 0.6 Adc) (IC = 10 Adc, IB = 2.0 Adc) VCE(sat) Base Emitter Saturation Voltage (IC = 6.0 Adc, IB = 0.6 Adc) (IC = 10 Adc, IB = 2.0 Adc) VBE(sat) Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc) VBE(on) -- -- 2.8 Vdc Vf -- 2.0 3.5 Vdc Cob -- 165 350 pF ts -- 75 15 s tf -- 5.2 15 s Diode Forward Voltage (IF = 10 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Storage Time (VCC = 12 Vdc, IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc) Figure 2 Fall Time FUNCTIONAL TESTS Second Breakdown Collector Current with Base-Forward Biased IS/B Pulsed Energy Test (See Figure 12) See Figure 10 IC2L/2 -- -- -- 180 mJ (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. [ VCC 14 V ADJUST UNTIL IC = 6 A VCC = 20 Vdc 10 V 25 s L = 10 mH 0V t1 * 5 ms 100 0 225 s 1N4933 220 Vclamp 2N3713 En 2 T.U.T. 51 VCEO [ 12 V [ 12 V Eo 1N3947 VCER -4V 27 Vclamp VCEO(sus) = 400 Vdc VCER(sus) = 425 Vdc * Adjust t1 such that IC reaches 200 mA at VCE = Vclamp Figure 1. Sustaining Voltage Test Circuit 2 Figure 2. Switching Times Test Circuit Motorola Bipolar Power Transistor Device Data VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2000 TJ = 150C hFE, DC CURRENT GAIN 1000 700 500 25C 300 200 30C 100 70 50 30 20 VCE = 3 Vdc VCE = 6 Vdc 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 3 TJ = 25C 2.5 2 10 A 1.5 IC = 0.5 A 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 0.5 1 2 Figure 4. Collector Saturation Region 2.8 VBE, BASE-EMITTER VOLTAGE (VOLTS) 2.2 IC/IB = 5 1.8 TJ = 150C 1.4 25C 1 - 30C 0.6 0.2 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 2.4 2 TJ = - 30C 1.6 25C 25C 1.2 0.8 10 VBE(sat) @ IC/IB = 5 VBE(on) @ VCE = 6 V 150C 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 5. Collector-Emitter Saturation Voltage 5 7 10 Figure 6. Base-Emitter Voltage 104 10 7 5 IC, COLLECTOR CURRENT ( A) ts 3 t, TIME ( s) 6 1 Figure 3. DC Current Gain tf 2 1 0.7 0.5 TJ = 25C IC/IB = 20 VCE = 12 Vdc 0.3 0.2 0.1 3 0.2 0.3 2 3 5 7 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 10 Figure 7. Turn-Off Switching Time Motorola Bipolar Power Transistor Device Data 20 103 VCE = 250 V TJ = 150C 102 IC = ICES 101 100 75C 25C 10-1 REVERSE - 0.2 0 FORWARD + 0.2 + 0.4 + 0.6 + 0.8 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 8. Collector Cutoff Region 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) RJC(t) = r(t) RJC RJC = C/W MAX D CURVES APPLY FOR POWER t1 PULSE TRAIN SHOWN t2 READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.01 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 t, TIME (ms) 20 50 100 200 500 1,000 2,000 Figure 9. Thermal Response 50 IC, COLLECTOR CURRENT (AMP) 20 10 5 100 s MJ10012 5.0 ms MJH10012 2 1 1.0 ms dc 0.2 TC = 25C 0.1 0.01 0.005 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 5 10 20 30 50 70 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 10. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C, T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING VZ = 400 V 0 Vdc t1 THERMAL DERATING 60 20 5 ms 1N4933 220 T.U.T. 2N5881 0.3 F 27 MJH10012 MJ10012 20 0 0 40 160 80 120 TC, CASE TEMPERATURE (C) Figure 11. Power Derating 4 10 Vdc 80 1.5 VCC = 12 Vdc 10 mH STANCORE C2688 200 t1 to be selected such that IC reaches 6 Adc before switch-off. NOTE: "Usage Test," Figure 12 specifies energy handling capabilities in an automotive ignition circuit. Figure 12. Usage Test Circuit Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C SEATING PLANE -T- E D K 2 PL 0.13 (0.005) U M Y M -Y- L V T Q M 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z C Q B U S E DIM A B C D E G H J K L Q S U V 4 A L 1 2 3 K D MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078 J H V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D-01 SOT 93, TO-218 TYPE ISSUE A Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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