MJ10012 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   



The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors

designed for automotive ignition, switching regulator and motor control applications.

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 400 Vdc (Min)

•175 Watts Capability at 50 Volts

•Automotive Functional Tests

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎÎ

MJ10012

ÎÎÎÎ

MJH10012

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

400

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

(RBE = 27 Ω)

ÎÎÎÎ

VCER

ÎÎÎÎÎÎÎÎ

550

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎÎ

600

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎ

8.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

2.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

@ TC = 100

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎ

175

100

1.0

ÎÎÎÎ

118

47.5

1.05

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

–55 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎ

1.0

ÎÎÎÎ

0.95

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for

Soldering Purposes: 1/8″ from

Case for 5 Seconds

ÎÎÎÎ

ÎÎÎÎÎ

275

ÎÎÎÎ

275

ÎÎÎ

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ10012/D

 Motorola, Inc. 1995





10 AMPERE

POWER TRANSISTORS

DARLINGTON NPN

SILICON

400 VOLTS

175 AND 118 WATTS

CASE 1–07

TO–204AA

(TO–3)

MJ10012

CASE 340D–01

TO–218 TYPE

MJH10012

≈

1 k

≈

EMITTER

BASE

COLLECTOR

REV 2

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Figure 1)

(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Figure 1)

(IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER)

ÎÎÎÎ

VCER(sus)

ÎÎÎÎ

425

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (Rated VCER, RBE = 27 Ohms)

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (Rated VCBO, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 3.0 Adc, VCE = 6 0 Vdc)

(IC = 6.0 Adc, VCE = 6.0 Vdc)

(IC = 10 Adc, VCE = 6.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

300

100

ÎÎÎÎ

550

350

150

ÎÎÎÎ

—

2000

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 0.6 Adc)

(IC = 6.0 Adc, IB = 0.6 Adc)

(IC = 10 Adc, IB = 2.0 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1 5

2.0

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 0.6 Adc)

(IC = 10 Adc, IB = 2.0 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.5

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage (IF = 10 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎÎ

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

165

ÎÎÎÎ

350

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CC = 12 Vdc, IC = 6.0 Adc,

IB1 = IB2 = 0.3 Adc) Figure 2

ÎÎÎÎ

—

ÎÎÎÎ

7 5

ÎÎÎÎ

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 12 Vdc, IC = 6.0 Adc,

IB1 = IB2 = 0.3 Adc) Figure 2

ÎÎÎÎ

—

ÎÎÎÎ

5.2

ÎÎÎÎ

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

FUNCTIONAL TESTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with

Base–Forward Biased

ÎÎÎÎ

IS/B

ÎÎÎÎÎÎÎÎÎÎ

See Figure 10

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Pulsed Energy Test (See Figure 12)

ÎÎÎÎ

IC2L/2

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

180

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

Vclamp

VCEO

10 V

VCC

[

14 V

ADJUST UNTIL IC = 6 A

VCEO(sus) = 400 Vdc

VCER(sus) = 425 Vdc

VCC = 20 Vdc

Figure 1. Sustaining Voltage

Test Circuit Figure 2. Switching Times

Test Circuit

*Adjust t1 such that IC reaches 200 mA at VCE = Vclamp

0 V *

5 ms

220

100 1N4933

2N3713

L = 10 mH

VCER

Vclamp

Ω

T.U.T.

– 4 V

[

12 V

51 1N3947

225

[

12 V

 

Motorola Bipolar Power Transistor Device Data

, COLLECTOR CURRENT ( A)

ICVBE, BASE–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

Figure 3. DC Current Gain Figure 4. Collector Saturation Region

0.002 IB, BASE CURRENT (AMP)

0.5 0.005 0.01 0.02 0.05 1 2

2.5

1.5

TJ = 25

104

VBE, BASE-EMITTER VOLTAGE (VOLTS)

103

102

101

100

10–1

IC = ICES

REVERSE FORWARD

Figure 5. Collector–Emitter Saturation Voltage

2.2

IC, COLLECTOR CURRENT (AMP)

0.20.1

1.8

1.4

0.6

Figure 6. Base–Emitter Voltage

2.8

IC, COLLECTOR CURRENT (AMP)

0.8

2.4

1.6

1.2

IC = 0.5 A

10 A

IC/IB = 5

– 30

C25

150

TJ = – 30

VBE(sat) @ IC/IB = 5

VBE(on) @ VCE = 6 V

0.1 0.3 0.5 0.7 1 2 5 73 10

VCE = 250 V

TJ = 150

0 +0.2–0.2 +0.4 +0.8+0.6

0.20.1 0.5

TJ = 150

VCE(sat)

, COLLECTOR–EMITTER SATURATION

VOLTAGE (VOLTS)

1 20.3 5 7 100.2 30.70.5 0.2

Figure 7. Turn–Off Switching Time

IC, COLLECTOR CURRENT (AMP)

0.5

0.1 0.5 0.7

TJ = 25

IC/IB = 20

VCE = 12 Vdc

0.3

t, TIME ( s)

Figure 8. Collector Cutoff Region

0.2 0.3 1 2 5 73 10 20

0.2

0.7

2000

0.1 IC, COLLECTOR CURRENT (AMP)

20 0.2 0.3 0.5 0.7 1 2 3 5 10

700

100

hFE, DC CURRENT GAIN

TJ = 150

VCE = 3 Vdc

VCE = 6 Vdc

200

300

500

1000

 

4 Motorola Bipolar Power Transistor Device Data

Figure 9. Thermal Response

t, TIME (ms)

0.01

0.5

0.2

0.1

0.05

0.03

0.01

JC(t) = r(t) R

JC =

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 2,000500

0.7

0.3

0.07

0.02

1,000

Figure 10. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.2

0.1

0.005 50 70 100 200 500

BONDING WIRE LIMIT

THERMAL LIMIT (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

300

0.01

IC, COLLECTOR CURRENT (AMP)

MJH10012

TC = 25

MJ10012

5.0 ms 1.0 ms

100

10 20 30

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 10 is based on TC = 25

C, TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25

C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 10 may be found at any case tem-

perature by using the appropriate curve on Figure 11.

TJ(pk) may be calculated from the data in Figure 11. At high

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations im-

posed by second breakdown.

Figure 11. Power Derating Figure 12. Usage Test Circuit

t1 to be selected such that IC reaches 6 Adc before switch-off.

NOTE: “Usage Test,” Figure 12 specifies energy handling

capabilities in an automotive ignition circuit.

100

00 40 80 120 200

TC, CASE TEMPERATURE (

POWER DERATING FACTOR (%)

THERMAL DERATING

SECOND BREAKDOWN

DERATING

160

MJH10012

MJ10012

1.5

10 mH

STANCORE

C2688

VZ = 400 V

T.U.T. 0.3

10 Vdc VCC = 12 Vdc

0 Vdc t1

5 ms 220 1N4933

2N5881 27

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

CASE 340D–01

SOT 93, TO–218 TYPE

ISSUE A

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

BQEC

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A19.00 19.60 0.749 0.771

B14.00 14.50 0.551 0.570

C4.20 4.70 0.165 0.185

D1.00 1.30 0.040 0.051

E1.45 1.65 0.058 0.064

G5.21 5.72 0.206 0.225

H2.60 3.00 0.103 0.118

J0.40 0.60 0.016 0.023

K28.50 32.00 1.123 1.259

L14.70 15.30 0.579 0.602

Q4.00 4.25 0.158 0.167

S17.50 18.10 0.689 0.712

U3.40 3.80 0.134 0.149

V1.50 2.00 0.060 0.078

1 2 3

 

6 Motorola Bipolar Power Transistor Device Data

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MJ10012/D

*MJ10012/D*

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