Aug 2011 Version 1.0 MagnaChip Semiconductor Ltd.
1
MDP14N25C N-channel MOSFET 250V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±30
V
TC=25oC
ID
14
A
TC=100oC
8.8
A
Pulsed Drain Current(1)
IDM
56
A
TC=25oC
PD
126.3
W
Derate above 25 oC
1.01
W/ oC
Repetitive Avalanche Energy(1)
EAR
12.6
mJ
Peak Diode Recovery dv/dt(3)
dv/dt
4.5
V/ns
Single Pulse Avalanche Energy(4)
EAS
550
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient(1)
RθJA
62.5
oC/W
Thermal Resistance, Junction-to-Case(1)
RθJC
0.99
MDP14N25C
N-Channel MOSFET 250V, 14A, 0.28Ω
General Description
The MDP14N25C is produced using advanced MagnaChip’s
MOSFET Technology, which provides low on-state resistance,
high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 250V
ID = 14A @ VGS = 10V
RDS(ON) ≤ 0.28Ω @ VGS = 10V
Applications
Power Supply
Motor Control
High Current, High Speed Switching
D
G
S
Aug 2011 Version 1.0 MagnaChip Semiconductor Ltd.
2
MDP14N25C N-channel MOSFET 250V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDP14N25CTH
-55~150oC
TO-220
Tube
Halogen Free
MDP14N25CTP
-55~150oC
TO-220
Tube
Pb Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
250
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
-
4.0
Drain Cut-Off Current
IDSS
VDS = 250V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
-
100
nA
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 7A
-
0.22
0.28
Ω
Forward Transconductance
gfs
VDS = 40V, ID = 7A
-
9.2
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 200V, ID = 14.0A, VGS = 10V(3)
-
20
-
nC
Gate-Source Charge
Qgs
-
4.5
-
Gate-Drain Charge
Qgd
-
8.9
-
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
741
-
pF
Reverse Transfer Capacitance
Crss
-
15
-
Output Capacitance
Coss
-
142
-
Turn-On Delay Time
td(on)
VGS = 10V, VDS = 125V, ID = 14.0A,
RG = 25Ω(3)
-
13
-
ns
Rise Time
tr
-
42
-
Turn-Off Delay Time
td(off)
-
44
-
Fall Time
tf
-
28
-
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
14
-
-
A
Source-Drain Diode Forward Voltage
VSD
IS = 14.0A, VGS = 0V
-
-
1.4
V
Body Diode Reverse Recovery Time
trr
IF = 14.0A, dl/dt = 100A/μs(3)
-
240
-
ns
Body Diode Reverse Recovery
Charge
Qrr
-
1.96
-
μC
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤6.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=4.5mH, IAS=14.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Aug 2011 Version 1.0 MagnaChip Semiconductor Ltd.
3
MDP14N25C N-channel MOSFET 250V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0 5 10 15
0
5
10
15
20
25
30
35
Notes
1. 250㎲ Pulse Test
2. TC=25℃
Vgs=4.0V
=4.5V
=5.0V
=5.5V
=6.0V
=6.5V
=7.0V
=7.5V
=8.0V
=10.0V
=15.0V
=20.0V
ID,Drain Current [A]
VDS,Drain-Source Voltage [V]
-5 0 5 10 15 20 25 30 35
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VGS=10.0V
VGS=20V
RDS(ON) [Ω ]
ID,Drain Current [A]
3 4 5 6 7 8 9
1
10
-55℃
25℃
150℃
* Notes ;
1. Vds=30V
ID(A)
VGS [V]
0.2 0.4 0.6 0.8 1.0 1.2
1
10
25℃
150℃
※ Notes :
1. VGS = 0 V
2.250s Pulse test
IDR
Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID = 7.0 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
Aug 2011 Version 1.0 MagnaChip Semiconductor Ltd.
4
MDP14N25C N-channel MOSFET 250V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
Fig.12 Single Pulse Maximum Power
Dissipation
10-1 100101102
10-2
10-1
100
101
10210 s
100 s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
1E-5 1E-4 1E-3 0.01 0.1 1 10
0
2000
4000
6000
8000
10000
12000
14000
16000
single Pulse
RthJC = 0.99℃/W
TC = 25℃
Power (W)
Pulse Width (s)
25 50 75 100 125 150
0
2
4
6
8
10
12
14
ID, Drain Current [A]
TC, Case Temperature [℃]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
RΘ JC
=0.99℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10 50V
125V
200V
※ Note : ID = 14A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
110
0
200
400
600
800
1000
1200
1400 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
Aug 2011 Version 1.0 MagnaChip Semiconductor Ltd.
5
MDP14N25C N-channel MOSFET 250V
Physical Dimensions
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
Aug 2011 Version 1.0 MagnaChip Semiconductor Ltd.
6
MDP14N25C N-channel MOSFET 250V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.