MBR1545CT - International Rectifier

Major Ratings and Characteristics

IF(AV) Rectangular 15 A

waveform

VRRM 35/45 V

IFSM @ tp = 5 µs sine 690 A

VF@

7.5 Apk, TJ = 125°C 0.57 V

TJ- 65 to 150 °C

Characteristics MBR15..CT Units

Description/ Features

The MBR15..CT center tap Schottky rectifier has been opti-

mized for low reverse leakage at high temperature. The

proprietary barrier technology allows for reliable operation up

to 150° C junction temperature. Typical applications are in

switching power supplies, converters, free-wheeling diodes,

and reverse battery protection.

150° C TJ operation

Center tap TO-220 package

Low forward voltage drop

High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

High frequency operation

Guard ring for enhanced ruggedness and long term

reliability

SCHOTTKY RECTIFIER 15 Amp

MBR1535CT

MBR1545CT

Bulletin PD-2.318 rev. C 07/03

1www.irf.com

Case Styles

MBR15..CT

TO-220AB

Anode

Base

Common

Cathode

node

Common

Cathode

MBR1535CT, MBR1545CT

Bulletin PD-2.318 rev. C 07/03

2www.irf.com

TJMax. Junction Temperature Range -65 to 150 °C

Tstg Max. Storage Temperature Range -65 to 175 °C

RthJC Max. Thermal Resistance Junction 3.0 °C/W DC operation

to Case

RthCS Typical Thermal Resistance, Case 0.50 °C/W Mounting surface, smooth and greased

to Heatsink

RthJA Max. Thermal Resistance Junction 60 °C/W DC operation

wt Approximate Weight 2 (0.07) g (oz.)

T Mounting Torque Min. 6 (5)

Max. 12 (10)

Case Style TO-220AB JEDEC

Thermal-Mechanical Specifications

Parameters Value Units Conditions

Kg-cm

(Ibf-in)

VFM Max. Forward Voltage Drop 0.84 V @ 15A

(1) 0.57 V @ 7.5A

0.72 V @ 15A

IRM Max. Instantaneus Reverse Current 0.1 mA TJ = 25 °C

(1) 15 mA TJ = 125 °C

CTMax. Junction Capacitance 400 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C

LSTypical Series Inductance 8.0 nH Measured from top of terminal to mounting plane

dv/dt Max. Voltage Rate of Change 10000 V/ µs

(Rated VR)

Electrical Specifications

Parameters Value Units Conditions

TJ = 125 °C

TJ = 25 °C

Rated DC voltage

(1) Pulse Width < 300µs, Duty Cycle <2%

IF(AV) Max. Aver. Forward Current (Per Leg) 7.5

(Per Device) 15

IFSM Max. Peak One Cycle Non Repetitive 690 5µs Sine or 3µs Rect. pulse

Surge applied at rated load condition halfwave single

phase 60Hz

EAS Non-Repetitive Avalanche Energy 7 mJ (Per Leg) TJ = 25 °C, IAS

= 2 Amps, L = 3.5 mH

IAR Repetitive Avalanche Current 2 A Current decaying linearly to zero in 1 µsec

(Per Leg) Frequency limited by TJ max. VA = 1.5 x VR typical

Absolute Maximum Ratings

Parameters Value Units Conditions

150

Part number MBR1535CT MBR1545CT

VRMax. DC Reverse Voltage (V)

VRWM Max. Working Peak Reverse Voltage (V) 35 45

Voltage Ratings

Surge

@ TC = 131 °C (Rated VR)A

Following any rated load

condition and with rated

VRRM applied

MBR1535CT, MBR1545CT

Bulletin PD-2.318 rev. C 07/03

www.irf.com

Fig. 2 - Typical Values Of Reverse Current

Vs. Reverse Voltage (Per Leg)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage (Per Leg)

Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg)

Fig. 1 - Max. Forward Voltage Drop Characteristics

(Per Leg)

Instantaneous Forward Current - I F (A)

Forward Voltage Drop - VFM (V)

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

T = 150˚C

T = 125˚C

T = 25˚C

Reverse Voltage - VR (V)

Reverse Current - I R

(mA)

0.0001

0.001

0.01

0.1

100

0 5 10 15 20 25 30 35 40 45

125˚C

100˚C

75˚C

50˚C

25˚C

T = 150˚C

Reverse Voltage - VR (V)

Junction Capacitance - C T (p F)

100

1000

0 1020304050

T = 25˚C

t1 , Rectangular Pulse Duration (Seconds)

Thermal Impedance Z

thJC (°C/W)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

Single Pulse

(Thermal Resistance)

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

MBR1535CT, MBR1545CT

Bulletin PD-2.318 rev. C 07/03

4www.irf.com

Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)

Fig. 5 - Max. Allowable Case Temperature

Vs. Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC

;

Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);

PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1

= rated VR

Average Forward Current - IF(AV) (A)

Allowable Case Temperature (°C)

Average Forward Current - IF(AV) (A)

Average Power Loss (Watts)

Square Wave Pulse Duration - tp (microsec)

Non-Repetitive Surge Current - I FSM (A)

100

1000

10 100 1000 10000

At Any Rated Load Condition

And With Rated Vrrm Applied

Following Surge

120

130

140

150

024681012

see note (2)

Square Wave (D = 0.50)

Rated Vr Applied

024681012

RMS Limit

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

MBR1535CT, MBR1545CT

Bulletin PD-2.318 rev. C 07/03

www.irf.com

Outline Table

3.78 (0.15)

3.54 (0.14)

10.54 (0.41)

MAX.

DIA.

15.24 (0.60)

14.84 (0.58)

2.92 (0.11)

2.54 (0.10)

TERM 2

14.09 (0.55)

13.47 (0.53)

3.96 (0.16)

3.55 (0.14)

0.94 (0.04)

0.69 (0.03)

4.57 (0.18)

4.32 (0.17)

30.61 (0.02) MAX.

5.08 (0.20) REF.

1.32 (0.05)

1.22 (0.05)

6.48 (0.25)

6.23 (0.24)

2°

0.10 (0.004)

1.40 (0.05)

1.15 (0.04)

2.89 (0.11)

2.64 (0.10)

2.04 (0.080) MAX.

Conform to JEDEC outline TO-220AB

Dimensions in millimeters and (inches)

Ordering Information Table

Device Code

124

1- Essential Part Number

2- Current Rating

3- Voltage code: Code = VRRM

4- CT = Essential Part Number

35 = 35V

45 = 45V

MBR 15 45 CT

Anode

Base

Common

Cathode

node

Common

Cathode

MBR1535CT, MBR1545CT

Bulletin PD-2.318 rev. C 07/03

6www.irf.com

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 07/03

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

MBR1545CT

********************************************

* This model has been developed by *

* Wizard SPICE MODEL GENERATOR (1999) *

* (International Rectifier Corporation) *

* contains Proprietary Information *

********************************************

* SPICE Model Diode is composed by a *

* simple diode plus paralled VCG2T *

********************************************

.SUBCKT MBR1545 ANO CAT

D1 ANO 1 DMOD (0.03191)

*Define diode model

.MODEL DMOD D(IS=9.72464638473799E-05A,N=1.30648926537753,BV=52V,

+ IBV=0.195508065728349A,RS= 0.000727548,CJO=1.94829876431799E-08,

+ VJ=2.27282978121533,XTI=2, EG=0.854458710837653)

********************************************

*Implementation of VCG2T

VX 1 2 DC 0V

R1 2 CAT TRES 1E-6

.MODEL TRES RES(R=1,TC1=27.6281424524011)

GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-5.219758E-03/27.62814)*((V(2,CAT)*1E6)/

(I(VX)+1E-6)-1))+1)*7.000165E-02*ABS(V(ANO,CAT)))-1)}

********************************************

.ENDS MBR1545

Thermal Model Subcircuit

.SUBCKT MBR1545 5 1

CTHERM1 5 4 1.05E+00

CTHERM2 4 3 4.44E+00

CTHERM3 3 2 1.16E+01

CTHERM4 2 1 6.12E+01

RTHERM1 5 4 1.33E+00

RTHERM2 4 3 1.19E+00

RTHERM1 3 2 3.81E-01

RTHERM1 2 1 9.54E-02

.ENDS MBR1545