w 2N5428 = 2N5430 u B FNEW ENGLAND SEMICONDUCTOR 7 AMPERE MEDIUM-POWER NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 80 - 100 VOLTS 40 WATTS ..designed for switching and wide-band amplifier applications. e Low COLLECTOR-EMITTER SATURATION VOLTAGE - Tal Vergan = 1-2 Voc (MAX) @ Ic = 7.0 ADC = e DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA TO-66 MAXIMUM RATINGS(1) Rating Symbol 2N5428 2N5430 Unit Collector-Emitter Voltage Vceo 80 100 Vde |_- 3 ~ Collector-Base Voltage Veg 80 100 Vde a rT Emitter-Base Voltage Ven 6.0 Vdc = Collector Current - Continuous Ic 7.0 Adc lp Base Current I, 1.0 Adc Total Power Dissipation Pp @Tc= 25C 40 Watts Derate above 25C 228 mWwPCc F Operating and Storage Junction | Ty, Ty -65 to +200 C J] Temperature Range THERMAL CHARACTERISTICS ae 2 Characteristic Symbol Max Unit TN TI Thermal Resistance, Junction to Case "IC 4.37 "C/W 6 (1) Indicates JEDEC Registration Data 's STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR FIGURE 1 POWER-TEMPERATURE DERATING CURVE Pp, POWER DISSIPATION {WATTS} cc) 100 120 140 160 Te, CASE TEMPERATURE (C) TO-66 6 Lake Street Lawrence,MA 01841 NEW ENGLAND SEMICONDUCTOR 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-339 REV: -- u B FNEW ENGLAND SEMICONDUCTOR 2N5430 ELECTRICAL CHARACTERISTICS (T,- = 25C unless otherwise noted) 2N5428 Characteristics | Symbol | Min [| Max [Unit OFF CHARACTERISTICS Collector-Emitter SustainingVoltage (1) Vceo(us) Vdc 1, =50mAdc, Ip = 0 2N5428 80 2N5430 100 Collector Cutoff Current IcEo Vee =75 Vde, Ip = 0 2N5428 100 | pAde Veg = 90 Vde, Ip = 0 2N5430 100 Collector Cutoff Current leex Veg = 75 Vde, Vepom = 1.5 Vde 2N5428 10 pAdc Vee = 90 Vde, Vigor = 1.5 Vde 2N5430 10 Veg = 75 Vde, Venom = 1.5 Vde, Te = 150C 2N5428 1.0 mAdc Veg = 90 Vde, Venom = 1.5 Vde, Te = 150C 2N5430 1.0 Collector Cutoff Current lego Voy = Rated Veg, Ip = 0 10 pAdc Emitter Cutoff Current lego Vap=6.0 Vdc, Ie~ 0 100 | pAde ON CHARACTERISTICS (1) DC Current Gain hep - I, = 500 mAdc, Veg = 2.0 Vde 2N5428, 2N5430 60 Ie=2.0 Ade, Vep= 2.0 Vde 2N5428, 2N5430 60 240 Ie=5.0 Ade, Veg = 2.0 Vde 2N5428, 2N5430 40 Collector-Emitter Saturation Voltage Vergaty Vde Ic=2.0 Ade, Ig= 0.2 Adc 0.7 [c= 7.0 Adc, Ig= 0.7 Adc 1.2 Base-Emitter Saturation Voltage Varat) Vde Ic =2.0 Ade, 1, = 0.2 Ade 1.2 Ic=7.0 Adc, 1g = 0.7 Ade 2.0 DYNAMIC CHARACTERISTICS Current-Gain--Bandwidth Product MHz [c= 500 mAde, Vee = 10 Vde, f = 10 MHz T 30 Output Capacitance Coy Ven = 10 Vdc, 1p =0, f= 100 kHz 250 p Input Capacitance Cir Vag = 2.0 Vde, 16 =0, f= 100 kHz 1000 pn SWITCHING CHARACTERISTICS Delay Time Vec = 40 Vde, Veporn = 3.0 Vde, ta 100 ns Rise Time Io = 2.0 Adc, I5, = 200 mAdc t, 100 ns Storage Time Voc = 40 Vde, Ic = 2.0 Adc t, 2.0 ps Fall Time Ip) = 1g2 = 200 mAdc ty 200 ns (1)Pulse Test: Pulse Width ~ 300us, Duty Cycle ~ 2.0%. FIGURE 2 SWITCHING TIME TEST CIRCUIT -116V 9 VCC --- 437V +40 FIGURE 3 TURN-ON TIME 10 5.0 @Vcc 80 Ic/ip = 10 2.0 Ty = 259 td VEB(olf} = 6.0 V 1.0 ov 62 20 3 05 = 10 45-o| 2 uF 82 Faz INPUT PULSE - 01 0.05 ty tt <10 ns 51 1914 B.C, = 1.0% .02 td Vesiott) 4.0 V 0.01 = uy0C+T oor 002 005 01 02 o5 10 6200S 50 Ic, COLLECTOR CURRENT (AMPS) 6 Lake Street Lawrence,MA 01841 NEW ENGLAND SEMICONDUCTOR 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-339 REV: --