For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
1
HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Functional Diagram
Features
Typical Applications
General Description
The HMC460 is a GaAs MMIC PHEMT Low Noise
Distributed Amplier die which operates between DC
and 20 GHz. The amplier provides 14 dB of gain,
2.5 dB noise gure and +16 dBm of output power at
1 dB gain compression while requiring only 60 mA
from a +8V supply. The HMC460 amplier can easily
be integrated into Multi-Chip-Modules (MCMs) due to
its small size. All data is with the chip in a 50 Ohm test
xture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
Noise Figure: 2.5 dB @ 10 GHz
Gain: 14 dB @ 10 GHz
P1dB Output Power: +16 dBm @ 10 GHz
Supply Voltage: +8V @ 60 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
The HMC460 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Electrical Specications, TA = +25° C, Vdd= 8V, Idd= 60 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 6.0 6.0 - 18.0 18.0 - 20.0 GHz
Gain 12 14 12 14 11 13 dB
Gain Flatness ± 0.5 ± 0.15 ± 0.25 dB
Gain Variation Over Temperature 0.008 0.016 0.01 0.02 0.01 0.02 dB/ °C
Noise Figure 4.0 5.0 2.5 3.5 3.0 4.0 dB
Input Return Loss 17 22 15 dB
Output Return Loss 17 15 15 dB
Output Power for 1 dB Compression (P1dB) 14 17 13 16 12 15 dBm
Saturated Output Power (Psat) 18 18 17 dBm
Output Third Order Intercept (IP3) 27. 5 28 27 dBm
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.9V Typ.) 60 60 60 mA
* Adjust Vgg between -2 to 0V to achieve Idd= 60 mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
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HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Low Frequency Gain & Return Loss
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0 2 4 6 8 10 12 14 16 18 20 22 24 26
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
GAIN (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.00001 0.0001 0.001 0.01 0.1 1 10
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
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HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Output P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
Reverse Isolation vs. Temperature
10
13
16
19
22
25
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
P1dB (dBm)
FREQUENCY (GHz)
10
13
16
19
22
25
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
PSAT (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
IP3 (dBm)
FREQUENCY (GHz)
8
10
12
14
16
18
0
1
2
3
4
5
7.5 7.75 8 8.25 8.5
NOISE FIGURE
GAIN P1dB
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (V)
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
4
HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Drain Bias Voltage (Vdd) +9 Vdc
Gate Bias Voltage (Vgg) -2 to 0 Vdc
Gate Bias Voltage (Igg) 2.5 mA
RF Input Power (RFIN)(Vdd = +8 Vdc) +18 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C) 2.17 W
Thermal Resistance
(channel to die bottom) 41.5 °C/ W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
+7.5 59
+8.0 60
+8.5 62
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Absolute Maximum Ratings Typical Supply Current vs. Vdd
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
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HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Pad Number Function Description Interface Schematic
1RFIN This pad is DC coupled
and matched to 50 Ohms.
2Vdd Power supply voltage for the amplier.
External bypass capacitors are required
3ACG1 Low frequency termination. Attach bypass capacitor per
application circuit herein.
4RFOUT This pad is DC coupled
and matched to 50 Ohms.
5ACG2 Low frequency termination. Attach bypass capacitor per
application circuit herein.
6Vgg Gate control for amplier. Adjust to achieve Idd= 60 mA.
Die
Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
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HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
7
HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD pro-
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is rec-
ommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
8
HMC460
v05.0612
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Notes: