VUO 36 Three Phase Rectifier Bridge VRRM V 800 1200 1400 1600 1800 Conditions IdAV IdAVM TC = 85C, module TC = 62C, module IFSM TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM; VR = 0 ~ ~ ~ ~ - Maximum Ratings Features * Package with 1/4" fast-on terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 A A (50 Hz) (60 Hz) 550 600 A A t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 500 550 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 1520 1520 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 1250 1250 As A2s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ * Easy to mount with one screw * Space and weight savings * Improved temperature & power cycling 2 10% 18 10% Nm lb.in. Dimensions in mm (1 mm = 0.0394") 22 g 2 VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25C TVJ = TVJM 0.3 2.0 mA mA VF IF = 150 A TVJ = 25C 1.7 V VT0 rt For power-loss calculations only 0.8 7.4 V mW RthJC per diode; 120 el. per module per diode; 120 el. per module 7.50 1.25 8.40 1.40 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 t = 1 min t=1s Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages 6.3 x 0.8 Data according to IEC 60747 and refer to a single diode unless otherwise stated. 10 0.2 22.1 0.5 Characteristic Values 12 0.3 D E 8 0.3 C 12 0.3 dS dA a + 27 35 TVJ TVJM Tstg RthJH ~ ~ VUO 36-08NO8 VUO 36-12NO8 VUO 36-14NO8 VUO 36-16NO8 VUO 36-18NO8 Symbol I2t - + Type 28.5 0.2 VRSM V 900 1300 1500 1700 1900 IdAV = 35 A VRRM = 800-1800 V B A 28.5 0.2 IXYS reserves the right to change limits, test conditions and dimensions. 20100920b 1-2 (c) IXYS All rights reserved http://store.iiic.cc/ VUO 36 30 600 TVJ = 150C TVJ = 25C 25 typ. 104 50 Hz 80% VRRM 500 TVJ = 45C 20 [A] 400 max. IF IFSM 15 [A] 2 200 5 100 1.0 1.5 2 TVJ = 150C TVJ = 150C 0 0.001 0.01 VF [V] 0.1 102 1 1 2 t [s] Fig. 1 Forward current versus voltage drop per diode 3 4 5 6 7 8 910 t [ms] Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 I t versus time (1-10 ms) per diode 2 40 80 RthKA K/W 0.15 1 2 4 8 15 60 Ptot 30 IdAV 40 [A] [W] 20 10 20 0 TVJ = 45C 103 [A s] 10 0 0.5 It 300 0 10 20 30 0 50 100 0 150 0 50 100 150 200 TC [C] TA [C] IdAVM [A] Fig. 4 Power dissipation vs. direct output current and ambient temperature 9 Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: ZthJK i 1 2 3 4 ZthJC 6 Zth Rthi (K/W) 0.183 0.528 1.89 4.9 ti (s) 0.032 0.085 5.9 8.3 Constants for ZthJK calculation: [K/W] 3 0 0.001 Fig. 6 0.01 0.1 t [s] 1 10 100 i 1 2 3 4 5 Rthi (K/W) 0.183 0.528 1.89 4.9 0.9 ti (s) 0.032 0.085 5.9 8.3 28 Transient thermal impedance per diode IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved 20100920b 2-2