BGF113
Differential Microphone Filter and ESD Protection
Data Sheet, V3.1, January 2009
Small Signal Discretes
Edition 2009-01-29
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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Data Sheet 4 V3.1, 2009-01-29
BGF113
Differential Microphone Filter and ESD Protection
BGF113
BGF113
Features
• Differential microphone filter
• Integrated ESD protection up to 15 kV contact discharge according to
IEC61000-4-2
• More than 40 dB stopband attenuation at 1 GHz
• Wafer Level Package with SnAgCu solder balls
• RoHS and WEEE compliant package
•400 µm solder ball pitch
WLP-8-6-3D
Description
BGF113 is a differential microphone filter with low pass characteristic offering a high stop band attenuation up to
6 GHz. External pins are protected against 15 kV contact discharge according to IEC61000-4-2. The wafer level
package is a green leadfree package with a size of 1.16 mm x 1.16 mm and a total height of 0.60 mm.
Type Package Marking Chip
BGF113 WLP-8-6 GF113 N0728
D1
D2
C1
800pF
C2
800pF
A2 A3
C3
1250pF
C4
1250pF
R4
R1
C2 (GND)
B3
C3
B1
B2 (GND)
C1
R5
25 Ω
2.2 kΩ
R3
2.2 kΩ
2 kΩ
External IOs
R2
1 kΩ1 Ω
Figure 1 Schematic
Table 1 Maximum Ratings
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Voltage at all pins to GND VP0 – 4 V –
Operating temperature range TOP -40 –85 °C –
Storage temperature range TSTG -65 –150 °C –
Input power at all pins PIN – – 60 mW @ +70 °C
Contact discharge from pin B1 or C1 to GND VEXT -15 –15 kV –
Contact discharge between all other pins VINT -2 – 2 kV –
Table 2 Electrical Characteristics1)
1) at TA = 25 °C
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Resistor R1R11900 2000 2100 Ω–
Resistor R2R2800 1000 1200 Ω–
Resistors R3, R4R3,4 1760 2200 2640 Ω–
Resistors R5R520 25 30 Ω–
Capacitors C1, C2C1,2 640 800 960 pF –
Capacitors C3, C4C3,4 1000 1250 1500 pF –
Leakage currents
ESD diodes to GND
IR–0.1
0.1
100
100
nA
µA
V = ±3 V
V = ±14 V
Insertion loss
2) Insertion loss (see also Figure 2) strongly depends upon source and load impedance and GND connection on the circuit
board. For RF test purposes a 50 Ω environment is used.
2)
Pins B1 to B3 or C1 to C3
IL 20 dB f = 0.1 ... 6 GHz
ZS = ZL = 50 Ω
BGF113
Differential Microphone Filter and ESD Protection
BGF113
Data Sheet 5 V3.1, 2009-01-29
Electrostatic Discharge According to IEC61000-4-2
BGF113 insertion loss
-80
-70
-60
-50
-40
-30
-20
-10
0
0.1 1 10 100 1000 10000
MHz
dB
Data Sheet 6 V3.1, 2009-01-29
BGF113
Differential Microphone Filter and ESD Protection
BGF113
Figure 2 Insertion loss B1 - B3 or C1 - C3, ZS = ZL = 50 Ω
BGF113 cross talk
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.1 1 10 100 1000 10000
MHz
dB
Figure 3 Cross talk B1 - C3 or C1 - B3, ZS = ZL = 50 Ω
BGF113
Differential Microphone Filter and ESD Protection
BGF113
Data Sheet 7 V3.1, 2009-01-29
Package outlines
COPLANARITY
0.6
SEATING PLANE
0.08
8x
C
C
STANDOFF
3)
±0.05
0.2
±0.05
(0.18 )
±0.05
(0.18 )
±0.05
0.1 C0.4
±0.05
1.16 B
2 x 0.4 = 0.8
0.4
1.16
±0.05
A
A
8x
ø0.05
M
0.25
B
±0.041)
3) Primary datum C and seating plane are defined by the domed crowns of the balls
1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C
2) A1 corner identified by marking
WLP-8-6-N-PO V01
2 x 0.4 = 0.8
±0.05
(0.18 )
±0.05
(0.18 )
2)
A3 A2
B3
C3
B2 B1
C2 C1
Pin A1
Corner Index Area
Solder balls face down Solder balls face up
Figure 4 WLP-8-6 (dimensions in mm)
Tape and reel specification
WLP-8-6-TP V01
Pin 1
Corner Index Area
8
1.33
1.33
0.25
0.75
4
Figure 5 Tape for WLP-8-6 (dimensions in mm)
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