T1RF510,511 | D84BL2.K2 4.0 AMPERES 100, 60 VOLTS FRDS(ON) = 0.6 0 POWER: MOS [FET FIELD EFFECT POWER TRANSIS The IRF510, 511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing GEs advanced Power DMOS tech- N-CHANNEL nology to achieve low on-resistance with excellent device ruggedness and reliability. The IRF510, 511 design has been optimized to give superior performance in most switching applications including: CASE STYLE TO-220AB switching power supplies, inverters, converters and sole- DIMENSIONS ARE IN INCHES AND (MILLIMETERS) noid/relay drivers. Also, the extended safe operating area with 8 28) TiO eh $9014.83 65139) good linear transfer characteristics makes it well suited for "1 T7OU4S2)) ote apt 22} many linear applications such as audio amplifiers and servo E x 20506.731 t Fe 245(6.22) | | CASE mo ors. TEMPERATURE f a POINT Features 145(3.68), 3550.02) 92) DIA. f Polysilicon gate Improved stability and reliability mess \ } a + .130(3.3} Leg :006(0.15) No secondary breakdown Excellent ruggedness a . r ] mip eae TERM.1 Ultra-fast switching Independent of temperature renm2 one sanguin: Voltage controlled High transconductance TERMS | . . . : :033(0.84) . 22 Low input capacitance Reduced drive requirement 2710.80 ER Ha eas . .021{0.53) e Excellent thermal stability Ease of paralleling see oe a OTs(038) UNIT TYPE {TERM.1/TERM.2| TERM.3 TAB POWER MOS FET}T0-220-AB] GATE |DRAIN{SOURCE| DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF510/D84BI1.2 IRF511/D84BK2 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Ras = 1M Vpar 100 60 Volts Continuous Drain Current @ To = 25C Ip 4.0 4.0 A @ Te = 100C 2.5 25 A Pulsed Drain Current lpm 16 16 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 26C Pp 20 20 Watts Derate Above 25C 0.16 0.16 w/c Operating and Storage Junction Temperature Range Ty, Tste -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rajc 6.4 6.4 C/W Thermal Resistance, Junction to Ambient Raa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 173 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL| MIN | TYP | MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF510/D84BL2 BVpss 100 _ _ Volts (Vas = OV, Ip = 250 wA) IRF511/D84BK2 60 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Veg = OV, To = 25C) _ 250 LA (Vpg = Max Rating, x 0.8, Vag = OV, Tc = 125C) 1000 Oe ye Current lass _ _ +500 nA on characteristics* Gate Threshold Voltage To = 26C _ (Vps = Vas, Ip = 250 mA) VGS(TH) 2.0 4.0 Volts On-State Drain Current _ _ (V@g = 10V, Vpg = 10V) Vos(on) | 40 Volts Static Drain-Source On-State Resistance (Vag = 10V, Ip = 2A) Rps(on) | _ 0.6 Ohms Forward Transconductance (Ip = 2A) Sfs 8 1.1 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 145 200 pF Output Capacitance Vos = 25V Coss _ 65 100 pF Reverse Transfer Capacitance f= 1 MHz Crss ~ 20 25 pF switching characteristics Turn-on Delay Time Vps = 30V ta(on) _ 16 _ ns Rise Time Ip = 1.5A, Vag = 15V tr _ 15 ns Turn-off Delay Time RGen = 500, Res = 12.50 ta(off) _ 30 _ ns Fall Time (Res (EQuiv.) = 100) tf _ 10 - ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 4.0 A Pulsed Source Current Ism _ _ 16 A Diode Forward Voltage _ 13 Vol (To = 25C, Vag = OV, Ig = 4A) VsD 2.5 olts Reverse Recovery Time ter _ 100 _ ns (Ig = 4A, dig/dt= 100A/us, Vpg = 40V max., To = 125C) Qrr 3 uc "Pulse Test: Pulse width < 300 ys, duty cycle = 2% 100 80 60 40 20 & OVS wn tRF11 IRF510 Ip- DRAIN CURRENT (AMPERES) og go> > ooo OPERATION IN THIS AREA MAY BE LIMITED BY Rogion) 0.2F SINGLE PULSE Te 26C 0.1 1 2 4 6 810 20 40 6080100 200 400 600 1000 Vpg, ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 174 Rogiom AND Vescru) NORMALIZED 40 CONDITIONS: Rosion) CONDITIONS: Ip=2.0A, Vgg=10V Vestn) CONDITIONS: Ip=1MA, Vpg# Veg 9 40 80 T,, JUNCTION TEMPERATURE (C) 120 160