H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5 2.54 7.0 6.0 3 4 1.2 7.62 6.62 DESCRIPTION The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G 7.62 SURFACE MOUNT 0.6 0.1 10.46 9.86 3.0 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 100mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCER (RBE= 1M ) H11D1, H11D2 300V H11D3, H11D4 200V Collector-base Voltage BVCBO H11D1, H11D2 300V H11D3, H11D4 200V Emitter-collector Voltage BVECO 6V Power Dissipation 300mW POWER DISSIPATION 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 7/12/00 13 Max 0.5 0.5 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCER ( 300V - H11D1, H11D2 ) ( 200V - H11D3, H11D4 ) l All electrical parameters 100% tested l Custom electrical selections available 7.62 4.0 3.0 Total Power Dissipation 260mW (derate linearly 2.67mW/C above 25C) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91077m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 1.2 V V A IF = 10mA IR = 10A VR = 6V 300 200 V V IC = 1mA, RBE = 1M ( note 2 ) 300 200 6 V V V IC = 100A 10 Collector-emitter Breakdown (BVCER ) H11D1, H11D2 H11D3, H11D4 Collector-base Breakdown (BVCBO) H11D1, H11D2 H11D3, H11D4 Emitter-collector Breakdown (BVECO ) Collector-emitter Dark Current (ICER ) H11D1, H11D2 H11D3, H11D4 Coupled Current Transfer Ratio (CTR) Input to Output Isolation Voltage VISO nA A 100 250 nA A VCE = 200V,RBE=1M VCE= 200V,RBE=1M, TA=100C VCE = 100V,RBE=1M VCE= 100V,RBE=1M, TA=100C % 0.4 5300 7500 5x1010 Input-output Isolation Resistance RISO Turn-on Time ton Turn-off Time toff IE = 100A 100 250 20 Collector-emitter Saturation VoltageVCE(SAT) Note 1 Note 2 1.5 TEST CONDITION 5 5 10mA IF , 10V VCE , RBE = 1M 10mA IF , 0.5mA IC , RBE = 1M See note 1 See note 1 VIO = 500V (note 1) VCC = 10V, IC= 2mA, RL = 100 , fig 1 V VRMS VPK s s Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 100 tr Output tf Output 10% 10% 90% 90% FIG 1 7/12/00 DB91077m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current ( normalised to 10mA IF ) 10 Relative current transfer ratio Collector power dissipation P C (mW) 400 300 200 100 0 1.0 0.1 VCE = 10V RBE = 1M TA = 25C 0.01 -30 0 25 50 75 100 1 125 5 10 20 50 Forward current IF (mA) Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Ambient Temperature 80 Relative current transfer ratio 70 Forward current I F (mA) 2 60 50 40 30 20 10 2.4 2.2 2.0 1.8 Normalised to VCE = 10V , IF = 10mA , RBE = 1M , TA = 25C IF = 20mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IF = 10mA IF = 5mA 0 -30 0 25 50 75 100 125 -30 Ambient temperature TA ( C ) 0 25 50 75 Ambient temperature TA ( C ) 100 Collector-base Current vs. Ambient Temperature Forward Voltage vs. Forward Current Collector-base current I CBO (A) 800 Forward voltage V F (V) 1.4 TA = -55C 1.3 1.2 TA = +25C 1.1 1.0 TA= +100C 0.9 0.8 VCB= 10V IF = 50mA 600 500 400 VCB= 200V VCB= 10V VCB= 10V IF = 10mA IF = 10mA IF = 5mA 300 200 100 0 0.1 0.2 0.5 1 2 5 10 Forward current IF (mA) 7/12/00 700 20 50 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB91077m-AAS/A1