INTERNATIONAL RECTIFIER L1E D Bf vassusz o00eb0-? ata Sheet No. PD-9.514A T-35-25 INTERNATIONAL RECTIFIER | OAR AVALANCHE AND dv/dt RATED IRFRO10 HEXFET TRANSISTORS IRFRO12 iIRFUO10O IRFUO12 N-CHANNEL 50 Volt, 0.20 Ohm HEXFET The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. Efficient geometry and unique processing of the HEXFET design achieve a very low on-state resistance combined with high transconductance and great device ruggedness. HEXFETs feature ail of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the elec- trical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The D-Pak (TO-252AA) surface mount package brings the advan- tages of HEXFETs to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFRO10 is provided on 16mm tape. The straight lead option IRFU010 of the device is called the I-Pak (TO-251AA). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunications equipment, DC/DC con- verters, and a wide range of consumer products. b- Ssomzee yi} Qa smdze_ or as are samt aio nate t E cux ry 200 007 wa OF 5700225 iNoH 10 04te. on oon + 2 = O61 wore asLaean y ois res y dea az ie . 73000 1151 2700 1c8 it ae nag 90 OTD HR le -- Laan 049 Hot C020 4030. ot Ma tre Pt aasoesy _t 2 aom OTE: Gisercrs sewn oF (REEAT Sox SURFACE AMEA = zantu? FOR TAPE ANO REEL ORDERING AnD PACKAGING [od |, ta a (+5 _y atten sa00 et = Ts doy BOTTOM VIEW 100 007% Case Style TQ-252AA (IRFR Series) Dimensions in Millimeters and (Inches) Product Summary Part Number | BVpsg }| Rpsjon) IRFRO10 s0v | 0.200 IRFRO12 sov | 0.300 IRFUO10 sov | 0.200 IRFUO12 50V 0.300 FEATURES: Surface Mountable (Order As IRFRO10) Straight Lead Option (Order As IRFU010) Fast Switching Low Drive Current Easily Paralleled Excellent Temperature Stability GATE CAA SOCREE $108 VIEW + cy Ly 255 1100 A a u ae SOLCER BOTTOM VIEW Case Style TO-251AA (IRFU Series) Dimensions in Millimeters and (Inches) wee Bare - . a os awe ~ INTERNATIONAL RECTIFIER LE D i 4aSSYS2 OO0aebL 4 i IRFRO10, IRFRO12, IRFU010, IRFU012 Devices T-35-25 Absolute Maximum Ratings Parameter (AFRO10, IRFUOTO (AFRO12, (RFU012 Units * Ip @ To = 25C Continuous Orain Current 8.2 67 A. Ip @ To = 100C Continuous Drain Current 5.2 4.2 A lom Pulsed Drain Gurrent @ 33 - 27 A - Pp @ To = 25C Max. Power Dissipation 25 : Ww Linear Darating Factor 0.20 Wik ) Ves Gate-to-Source Voltage : 20 Vv tk Avalanche Current @ 15 - A (See Fig. 14) dvidt Peak Diode recovery dvidt (3) 2.0 Vins (See Fig. 17) ty Operating Junction ~55 to 150 - C Tsta Storage Temperature Range Lead Temperatura - 300 (0.669 In. (1.6mm) from case for 10s) C Electrical Characteristics @ ty = 25c (Uniess Otherwise Specified) Parameter Type Min, Typ. Max. | Units Test Conditions BVpss _Draln-to-Source Breakdown Voltage All 50 - - V. [Veg = OV, Ip = 250nA RAps{on) Static Oraln-to-Source {RFROI0}; = 0.16 | 0.20 On-State Resistance @ IRFUOTO CG | Veg = 10V. Ip =4.2A IRFRO12 - 0.20 0.30 IRFUO12 Ipfen) - On-State Drain Current IRFROIO) 8.2 . IRFU010 _ _ A Vos> Ipxon) * Rosion) Max, : . IRFRO12| 6.7 Vas = - tov \AFU0I2 Vestn) Gate Threshold Voltage ALL 20 _ 4.0 Vos = Vas. Ip = 250nA - fs Forward Transconductance @) ALL 24 a | S@&) [Vpg = 50V, Ipg = 3.6A Ipsg Zero Gate Voltage Drain Current - _ 260 Vos = Max. Rating, Veg = OV ALL - - 1000 HA Vps = 0.8 x Max. Rating Veg = OV, Ty = 125C lagg Gate-to-Source Leakage Forward ALL - ad 500 nA |V@g = 20V lagg _- Gate-to-Source Leakage Revarse ALL - -_ -500 nA | Vag = -20V Qg Total Gate Charge ALL - 6.7 10 nC |V@g = 10V, Ip = 7.3A Vos = 0.8 x Max. Rating - - c 2. Qgs Gate-to-Source Charge ALL 1,8 6 nc See Fig. 16 Qga Gate-to-Drain (Miller) Charge - 32 48 nC | (Indpendent or operating temperature) tdony _ Turn-On Delay Time ALL. - 1 17 ns) | Vpp = 28V, ip = 7.44, Raq = 240 by Rise Time ALL - 33 50 ns | Ap = 3.32 ta(oth, Turn-Otf Delay Time ALL _ 12 18 ns See Fig. 15 tt Fall Time ALL 23 % ns (independent of operating temperature) lp Internal Drain inductance ALL - 45 - nH | Measured from the drain Modifed MOSFET symbol lead, 6mm (0.25 in.) from showing the internal package to center of die. inductances. Ls Internal Source Inductance ALL - 75 - nH | Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. % Ciss Input Capacitance ALL _ 250 - pF | Vag = OV. Vog = 25V Coss Output Capacitance ALL - 150 - pF if = 1.0 MHz Crss Reverse Transfer Capacitance ALL ~ 29 - pF | Seo Fig. 10 C-10INTERNATIONAL RECTIFIER LLE D 445S4Se G004ebe QO IRFRO10, IRFRO12, IRFU010, IRFU012 Devices Source-Drain Diode Ratings and Characteristics 7-35-25 DAAIN CURRENT (AMPERES) Ip. - ~ Parameter Type Min. Typ. Max. | Units Test Conditions Ig Continuous Source Current ALL - - - 8.2 A Modified MOSFET symbo! showing the integral (Body Diode) Reverse p-n junction rectifier. 0 ISM Pulsed Source Current ALL - - 33 A - . 4 (Body Diode) @ : Vgp __ Diode Forward Voltage @) ALL | - 16 V_ [Ty = 25C, Ig = 8.2A, Vag = OV tr Ravarse Recovery Time ALL 4 86 490 ns |Ty = 28C, Ip = 7.3A, difdi = 100 Aus QarR Raverse Recovery Charge ACL 0.15 0.33 0,78 LC . ton Forward Turn-On Time ALL intrinsfe turn-on tima is negligible. Turn-on speed Is substantially controlled by Lg + Lp. Thermal Resistance Rinsc _Junetion-to-Case AL | - 5.0 | KW Rincs Case-to-Sink ALL - 1.7 _ KW Typical solder mount ) RingA dunction-fo-Ambient ALL - _ 110 | KAW ) Typical socket mount @ Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 5) @) @ Vpp = 25V, Stating Ty = 25C, L = 100HH, Rg = 250, single pulse. @) Isp < 82A, dildt = 130AIus, Vop = 40V, Ty = 150C Suggested Rg = 24Q G) Pulse width = 300 ys; Duty Cycle = 2% @) kw = ecw WIK = WieC Mounting pad must cover heatsink surface area, See case style drawing on front page. The information shown on the following graphs applies also to the IRFU devices. 10 102 4 Vpg 2 SOV 5 8 = GR 2 ec i aa) < 6 3 - 8 = uy a a 5S a 4 o A 14 zt T,s J 5 2 a H 2 AV % 7 0.4 2 4 6 8 10 5 10 15 20 Vpg: ORAIN-TO-SOURCE VOLTAGE (VOLTS) Veg: GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics C-11LLE D 5 4&SS452 0008263 2 i IRFRO10, IRFRO12, IRFU010, IRFU012 Devices INTERNATIONAL RECTIFIER . T-35-25 - Ip, DRAIN CURRENT (AMPERES) THERMAL RESPONSE (Z;p jc) 10 102 6 I 0 aL IAFRO12 ? 10 10 5 12 Ip, DRAIN CURRENT (AMPERES) t T= 150C INGLE PULSE 2 av 8-0 0.5 1.0 1,5 2,0 2.5 Oty 2 5 40 2 5 102 Vpg ORAIN-TO-SQURCE VOLTAGE (VOLTS) Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area eS Oo TI ets }<_ta NOTES: 4. DUTY FACTOR, D=t,/to 2. PEAK Ty=Ppm x ZthuC + To 4075 40-4 4073 4074 0.4 4 40 ty, RECTANGULAR PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration C-12a LE D Bj vsssusa goga2b4 4 IRFRO10, IRFRO12, IRFU010, IRFU012 Devices INTERNATIONAL RECTIFIER - * T-35-25 5.0 102 4.0 3.0 2.0 Ty = 150C TRANSCONDUCTANCE (SIEMENS) ~ Ty = 25C Its: Ton: REVERSE DRAIN CURRENT (AMPERES) ; 4 : 0.05 3 6 9 12 45 0.0 0.5 1.0 1.5 2.0 2.5 Ip, ORAIN CURRENT (AMPERES) Vgp. SOURCE-TO-DAAIN VOLTAGE {VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 3.0 WW ioe 8 2 Ee < _! ke oa n > 4.45 nw 2.4 z 4 g a < _ wa 1.05 4 ai-8 a WY aw N SN w 4 ou Oz ao ce = 1(<z = ost 8 0.95 91.2 PZ 22 o gs F Z Sa a a - . + 0.6 = 0.85 2 0 a 2 a a > a Veg = 10 a 6 0.0 260 -40 -20 0 20 40 GO 80 100 120 140 160 "=60 -40 -20 0 20 40 6O 80 100 120 140 160 Ty, JUNCTION TEMPERATURE ( C) Ty. JUNCTION TEMPERATURE ( C) Fig. 8 Breakdown Voltage Vs. Temperature Fig 9 Normalized On-Resistance Vs. Temperature C-13OOOO OOOO EE EE EEE EEE eGSCOW ue D fj assusa cooa2es bf IRFRO10, IRFRO12, IRFU010, IRFU012 Devices INTERNATIONAL RECTIFIER T-35-25 . 500 20 = Cgg + Cg Cys SHORTED 100 a 400 9 i6 = Cys + Cog Cgg / (gs + Cgq) 2 -~ Cae + , i] 6 ds * gd @ uw" 300 a 12 Z if a g oO 3 << So a 200 an 8 < t e G Ww & wo an o > FOR TEST CIRCUIT SEE FIGURE 16 4 2 6 10 2 5 102 0 2 4 6 8 10 Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Gg, TOTAL GATE CHARGE (nC) 0 Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage IAFRO10 Aps (on): DAAIN-TO-SOURCE ON RESISTANCE Ip. DRAIN CURRENT (AMPERES .0 0 9-9 6 42 48 24 30 25 50 75 100 425 450 Tp: DRAIN CURRENT (AMPERES) Te, CASE TEMPERATURE (*C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature C-14IRFRO10, IRFRO12, IRFU010, IRFU012 Devices INTERNATIONAL RECTIFIER LLE D i 4855452 OOOS2bb 4 i T-35-25 - . 8Voss REGURED PEAK I, . b-| Yos It A NY Yoo / i bb 7 \ _ os eee Fig. 14a Unclamped Inductive Test Circuit : : Fig. 14b Unclamped Inductive Waveforms Rp Ves 90% - B I OUT vos Jt: Voo Rg ~ Vos Ves ! Veg = 10V | { vA, , N A \ . | ! I | DUTY FACTOR 0.1% . {toon tr Vu > ta(off) Fig. 15a Switching Time Test Circuit Fig. 15b Switching Time Waveforms o +Vos CURRENT ISOLATED REGULATOR CeePLY 12V BATTERY - - _ . | | 4.5mA GATE o9J___- VOLTAGE -Vpg Ig = 'p CURRENT CURRENT SAMPLING SAMPLING CHARGE RESISTOR RESISTOR Fig. 16a Basic Gate Charge Waveform Fig. 16b Gate Charge Test Circuit C-15@ DRIVER GATE ORIVE IRFRO10, IRFRO12, IRFU010, IRFU012 Devices T-35- 25 INTERNATIONAL RECTIFIER Bie D Bf yassuse go082b7 oO i PW. peRIoo-_] 9 = beRion : r+ PW _ CIRCUIT LAYOUT CONSIDERATIONS Vee w +_< LOW STRAY INDUCTANCE YY es = GROUND PLANE o SC t LOW LEAKAGE INDUCTANCE rs ra our CURRENT TRANSFORMER @| OUT. leg WAVEFORM iy Ae < BODY DIODE FORWARD aT URRENT ann @) | OUT. Vpg WAVEFORM DIODE RECOVERY , dvidt . Q oe RE-APPLIEO BODY mcr FORWARD DROP @ E Yoo q _ @ | INDUCTOR CURRENT L(t DRIVER _dv/dt CONTROLLED BY Rg ] Lillis DRIVER SAME DEVICE GROUP AS DUT we SS \ Isp CONTROLLED BY OUTY FACTOR, D oN GQKV Fig. 17 Peak Diode Recovery dv/dt Test Circuit ORDERING INFORMATION IRFR Series Tape and reel when ordering, add TR after the part number and the quantity (order in multiples of 3,000 pieces). Example: IRFRO10TR 15,000 pieces. PACKAGING FEEO DIRECTION ---_> 1.6 (0062 - 4.1 (0.181) [ 14 (00557 39 (0.183) O-OO0-0-0-0-9-9 Pelee 224 (0681) max, ml 135 (0531) 125 (0.492) ' 375 (14 750) ;]_ 50 (1 968) MIN. 330 112.988) | DIA. ALL DIMENSIONS IN MILLIMETER (INCHES) . C-16