CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Ultrafast recovery time for high efficiency
- Built-in strain relief
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
Trr ns
Cj pF
T
JO
C
T
STG O
C
Document Number: DS_D1405051 Version: J14
US1A thru US1M
Taiwan Semiconductor
Hi
g
h Efficient Surface Mount Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AC (SMA)
DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL US
1A
US
1B
US
1D
I
FSM
30
US
1J
US
1K
US
1M UNIT
US
1G
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A V
F
1.0 V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
5μA
150
Typical thermal resistance R
θjL
R
θjA
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
27
75
O
C/W
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.7
50 75
15 10
PART NO.
PART NO.
US1M
US1M
US1M
(TA=25℃ unless otherwise noted)
Document Number: DS_D1405051 Version: J14
US1A thru US1M
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING COD E GREEN C OMPOUND
CODE
PACKAGE PACKING
US1x
(Note 1)
Prefix "H"
R3
Suffix "G"
SMA 1,800 / 7" Plastic reel
R2 SMA 7,500 / 13" Paper reel
M2 SMA 7,500 / 13" Plastic reel
F3 Folded SMA 1,800 / 7" Plastic reel
F2 Folded SMA 7,500 / 13" Paper reel
F4 Folded SMA 7,500 / 13" Plastic reel
N/A E3 Clip SMA 1,800 / 7" Plastic reel
E2 Clip SMA 7,500 / 13" Plastic reel
Note 1: "x" defines voltage from 50V (US1A) to 1000V (US1M)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
US1M R3 R3
US1M R3G R3 G Green compound
US1MHR3 H R3 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
0.5
1
1.5
0 255075100125150175
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
RESISTIVE OR
INDUCTIVE LOAD
0
10
20
30
40
50
1 10 100
PEAK FORWARD SURGE
CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.01
0.1
1
10
100
0 20406080100
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=25℃
TJ=100℃
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
US1J-US1M
US1A-US1G
PULSE WIDTH=300μs
1% DUTY CYCLE
Min Max Min Max
A 1.27 1.58 0.050 0.062
B 4.06 4.60 0.160 0.181
C 2.29 2.83 0.090 0.111
D 1.99 2.50 0.078 0.098
E 0.90 1.41 0.035 0.056
F 4.95 5.33 0.195 0.210
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1405051 Version: J14
0.066
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGG ESTED PAD LAYO UT
1.52 0.060
C 3.93 0.155
Symbol Unit (mm) Unit (inch)
A1.68
MARKING DIAGRAM
US1A thru US1M
Taiwan Semiconductor
D 2.41 0.095
E 5.45 0.215
B
1
10
100
0.1 1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
US1
A
-US1G
US1J-US1M
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL IMPEDANCE A
(℃/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405051 Version: J14
US1A thru US1M
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
