TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2 1
July 2009
TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP140T
: TIP141T
: TIP142T
60
80
100
V
V
V
VCEO
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
60
80
100
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 10 A
ICP Collector Current (Pulse) 15 A
IB Base Current (DC) 0.5 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 to +150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ≅
R2 0.12k Ω≅
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2 2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
IC = 30mA, IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
2
2
2
mA
mA
mA
ICBO Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
1
1
1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 5A
VCE =4V, IC = 10A
1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA
IC = 10A, IB = 40mA
2
3
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V
VBE(on) Base-Emitter On Voltage VCE = 4V, IC = 10A 3 V
tD Delay Time VCC = 30V, IC = 5A
IB1 = 20mA
IB2 = -20mA
RL = 6Ω
0.15 µs
tR Rise Time 0.55 µs
tSTG Storage Time 2.5 µs
tF Fall Time 2.5 µs
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0 1 2 3 4 5
0
1
2
3
4
5
6
7
8
9
10
IB = 2000uA
IB = 1800uA
IB = 1600uA
IB = 1400uA
IB = 1200uA
I
B
= 1000uA
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100
10
100
1k
10k
100k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC=500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], CAPACITANCE
1 10 100 1000
0.1
1
10
100
TIP141T
TIP142T
TIP140T
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2 4
Physical Dimensions
TO-220