VS-ST180C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 350 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case A-PUK (TO-200AB) * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS A-PUK (TO-200AB) * DC motor controls * Controlled DC power supplies * AC controllers PRIMARY CHARACTERISTICS IT(AV) 350 A VDRM/VRRM 400 V, 800 V, 1200 V, 1600 V, 1800 V, 2000 V VTM 1.96 V IGT 90 mA TJ -40 C to +125 C Package A-PUK (TO-200AB) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 C 660 A 25 C 5000 60 Hz 5230 50 Hz 125 60 Hz 114 Typical TJ UNITS 350 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 2000 V 100 s -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST180C..C VOLTAGE CODE VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 04 400 08 800 500 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 30 Revision: 27-Sep-17 Document Number: 94396 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled t = 10 ms No voltage reapplied 5000 100 % VRRM reapplied 4200 t = 10 ms t = 10 ms I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t A C 660 t = 8.3 ms No voltage reapplied 5230 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 125 114 88 t = 0.1 to 10 ms, no voltage reapplied 1250 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.08 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.14 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.18 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.14 Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 VTM IH Maximum (typical) latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 81 High level value of threshold voltage Maximum holding current A 4400 Low level value of threshold voltage Maximum on-state voltage UNITS 55 (85) DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 350 (140) 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 s BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage dV/dt Maximum peak reverse and off-state leakage current IRRM, IDRM TEST CONDITIONS VALUES UNITS TJ = TJ maximum linear to 80 % rated VDRM 500 V/s TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 27-Sep-17 Document Number: 94396 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 IGD DC gate voltage not to trigger VGD A 20 V 5.0 TJ = - 40 C 180 - TJ = 25 C 90 150 40 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 C TJ = 125 C 2.9 - 1.8 3.0 1.2 TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNIT S W 3.0 TJ = - 40 C DC gate current not to trigger max. TJ = TJ maximum, tp 5 ms TJ = 125 C VGT typ. TJ = TJ maximum, tp 5 ms IGT DC gate voltage required to trigger VALUES TEST CONDITIONS mA V 10 mA 0.25 V VALUES UNIT S THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TJ -40 to 125 TStg -40 to 150 DC operation single side cooled RthJ-hs Maximum thermal resistance, case to heatsink TEST CONDITIONS RthC-hs 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Approximate weight Case style 0.17 DC operation double side cooled Mounting force, 10 % See dimensions - link at the end of datasheet C K/W 4900 (500) N (kg) 50 g A-PUK (TO-200AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.015 0.015 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94396 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors 130 ST180C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 O 90 Conduction angle 80 70 30 180 60 60 50 90 ST180C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 O Conduction period 70 60 50 40 30 120 60 0 100 50 150 200 250 0 100 Average On-State Current (A) DC 120 200 300 400 500 600 700 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 1000 ST180C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 90 O 80 Conduction period 70 60 50 30 40 30 60 20 0 100 DC 90 180 120 90 60 30 900 180 Maximum Average On-State Power Loss (W) 120 Maximum Allowable Heatsink Temperature (C) 180 20 40 800 700 500 400 O 300 Conduction angle 200 ST180C..C Series TJ = 125 C 100 120 0 200 400 300 0 Fig. 5 - On-State Power Loss Characteristics 110 100 90 O Conduction angle 80 70 60 30 180 50 40 60 30 90 120 20 0 50 100 150 200 250 300 350 400 450 Average On-State Current (A) Fig. 3 - Current Ratings Characteristics Maximum Average On-State Power Loss (W) 130 ST180C..C Series (Double side cooled) RthJ-hs (DC) = 0.17 K/W 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 120 RMS limit 600 Average On-State Current (A) Maximum Allowable Heatsink Temperature (C) 90 30 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 DC 180 120 90 60 30 RMS limit O Conduction period ST180C..C Series TJ = 125 C 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94396 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors 4500 5000 Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No Voltage Reapplied Rated VRRM Reapplied 4500 Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) At any rated load condition and with rated VRRM applied following surge 3500 3000 2500 4000 3500 3000 2500 ST180C..C Series ST180C..C Series 2000 1 10 2000 0.01 100 0.1 Number of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-State Current (A) 1 Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10 000 TJ = 25 C TJ = 125 C 1000 ST180C..C Series 100 1 2 3 4 5 6 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics ZthJ-hs - Transient Thermal Impedance (K/W) 1 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST180C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94396 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180C Series www.vishay.com Vishay Semiconductors 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s IGD TJ = 40 C VGD 0.1 0.001 (b) TJ = 25 C 1 tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (a) TJ = 125 C Instantaneous Gate Voltage (V) 100 (1) 0.1 (3) (4) Frequency limited by PG(AV) Device: ST180C..C Series 0.01 (2) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 18 0 C 20 C 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case A-PUK (TO-200AB) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 27-Sep-17 Document Number: 94396 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors A-PUK (TO-200AB) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. C G 13.7/14.4 (0.54/0.57) A 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. Note: A = Anode C = Cathode G = Gate 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95074 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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