IRF620 IRF620FP N-channel 200V - 0.6 - 6A TO-220/TO-220FP PowerMESHTM II Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID IRF620 200V <0.8 6A IRF620FP 200V <0.8 6A Extremely high dv/dt capability 100% avalanche tested New high voltage benchmark Gate charge minimized 1 1 TO-220 The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. Applications ) s ( ct Switching application 2 TO-220FP c u d Description 3 3 2 ) s t( o r P Internal schematic diagram e t le o s b O - u d o r P e t e l o s b OOrder codes Part number Marking Package Packaging IRF620 IRF620 TO-220 Tube IRF620FP IRF620 TO-220FP Tube August 2006 Rev 6 1/14 www.st.com 14 Contents IRF620 - IRF620FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/14 o s b O - o r P ) s t( IRF620 - IRF620FP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDS VDGR VGS ID ID IDM (2) PTOT Drain-source voltage (VGS = 0) 200 V Drain-gate voltage (RGS = 20 k) 200 V Gate-source voltage 20 6 A 3.8 3.8(1) A Drain current (pulsed) 24 24(1) A Total dissipation at TC = 25C 70 30 0.56 0.24 Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Derating factor Peak diode recovery voltage slope 5 VISO Insulation winthstand voltage (DC) -- TJ Tstg Operating junction temperature Storage temperature e t le 1. Limited only by maximum temperature allowed 3. ISD 6A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX Thermal data (s) ct Symbol u d o Rthc-sink s b O t e l o Tl Table 3. Symbol od ) s t( 2000 -65 to 150 150 Thermal resistance junction-case Max W W/C V/ns V C Value Parameter r P e Rthj-a uc 5 Pr o s b O - 2. Pulse width limited by safe operating area Rthj-case V 6(1) dv/dt(3) Table 2. TO-220FP Unit TO-220 TO-220FP 1.79 4.17 C/W Thermal resistance junction-ambient Max 62.5 C/W Thermal resistance case-sink typ 0.5 C/W Maximum lead temperature for soldering purpose 300 C Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value Unit 6 A 160 mJ 3/14 Electrical characteristics 2 IRF620 - IRF620FP Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 A, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = 20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250A RDS(on) Static drain-source on resistance VGS= 10V, ID= 3A Parameter gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance td(on) tr Turn-on Delay Time Rise Time Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge (s) r P e od t e l o t c u Test conditions e t le VDS > ID(on) x RDS(on)max, ID = 3A 4/14 V 2 1 50 A A 100 nA 3 4 V 0.6 0.8 c u d o r P Min. Unit Typ. ) s t( Max. Unit 1.5 S VDS =25V, f=1 MHz, VGS=0 350 70 35 pF pF pF VDD = 100V, ID = 3A, RG = 4.7, VGS = 10V (see Figure 14) 18 30 ns ns VDD=160V, ID = 6A VGS =10V 19 4.5 7.5 o s b O - 1. Pulsed: pulse duration=300s, duty cycle 1.5% s b O Max. 200 VDS = Max rating @125C Dynamic Symbol Typ. VDS = Max rating, IDSS Table 5. Min. 27 nC nC nC IRF620 - IRF620FP Table 6. Electrical characteristics Source drain diode Symbol Max Unit Source-drain current 6 A ISDM(1) Source-drain current (pulsed) 24 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM Parameter Test conditions Min Typ. ISD=6A, VGS=0 ISD=6A, Reverse recovery time Reverse recovery charge Reverse recovery current 155 700 9 di/dt = 100A/s, VDD=100V, Tj=150C (see Figure 16) ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 5/14 Electrical characteristics IRF620 - IRF620FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220/FP Figure 4. Thermal impedance for TO-220/FP c u d e t le Figure 5. ) s ( ct Output characterisics u d o r P e t e l o s b O 6/14 o s b O Figure 6. o r P Transfer characteristics ) s t( IRF620 - IRF620FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations c u d e t le (s) o r P o s b O - Figure 11. Normalized gate threshold voltage vs temperature t c u ) s t( Figure 12. Normalized on resistance vs temperature d o r P e t e l o s b O 7/14 Electrical characteristics IRF620 - IRF620FP Figure 13. Source-drain diode forward characteristics c u d e t le ) s ( ct u d o r P e t e l o s b O 8/14 o s b O - o r P ) s t( IRF620 - IRF620FP 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit c u d ) s t( Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit e t le ) s ( ct u d o r P e Figure 18. Unclamped inductive waveform o r P o s b O - Figure 19. Switching time waveform t e l o s b O 9/14 Package mechanical data 4 IRF620 - IRF620FP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct u d o r P e t e l o s b O 10/14 o s b O - o r P ) s t( IRF620 - IRF620FP Package mechanical data TO-220 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 ) s t( H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 L20 L30 d o r 0.645 28.90 1.137 oP 3.75 3.85 Q 2.65 2.95 ) s ( ct 0.147 P e let 0.104 uc 0.154 16.40 0.151 0.116 o s b O - u d o r P e t e l o s b O 11/14 Package mechanical data IRF620 - IRF620FP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 TYP. 4.6 0.173 0.181 MAX. 0.106 2.5 2.7 0.098 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 c u d 16 0.630 L3 28.6 30.6 1.126 L4 9.8 10.6 .0385 L5 2.9 3.6 0.114 L6 15.9 16.4 0.626 9 9.3 O 3 3.2 e t le o r P 0.417 0.141 0.645 0.366 0.118 D E o s b O - 0.126 L3 L6 L7 F2 H G G1 F B ) s ( ct L2 L5 ) s t( 1.204 0.354 F1 A L7 r P e 12/14 MIN. B u d o s b O MAX. D L2 t e l o inch TYP 1 2 3 L4 IRF620 - IRF620FP 5 Revision history Revision history Table 7. Revision history Date Revision Changes 05-Sep-2004 2 Complete document 03-Aug-2006 3 New template, no content change c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 13/14 IRF620 - IRF620FP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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