August 2006 Rev 6 1/14
14
IRF620
IRF620FP
N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP
PowerMESH™ II Power MOSFET
General features
■Extremely high dv/dt capability
■100% avalanche tested
■New high voltage benchmark
■Gate charge minimized
Description
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns swithing
speed, gate charge and ruggedness.
Applications
■Switching application
Internal schematic diagram
Type VDSS
(@Tjmax) RDS(on) ID
IRF620 200V <0.8Ω6A
IRF620FP 200V <0.8Ω6A
123
12
3
TO-220 TO-220FP
www.st.com
Order codes
Part number Marking Package Packaging
IRF620 IRF620 TO-220 Tube
IRF620FP IRF620 TO-220FP Tube
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
VDS Drain-source voltage (VGS = 0) 200 V
VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V
VGS Gate-source voltage ± 20 V
IDDrain current (continuous) at TC = 25°C 6 6(1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC=100°C 3.8 3.8(1) A
IDM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 24 24(1) A
PTOT Total dissipation at TC = 25°C 70 30 W
Derating factor 0.56 0.24 W/°C
dv/dt(3)
3. ISD ≤6A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Peak diode recovery voltage slope 5 5 V/ns
VISO Insulation winthstand voltage (DC) -- 2000 V
TJ
Tstg
Operating junction temperature
Storage temperature
-65 to 150
150 °C
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP
Rthj-case Thermal resistance junction-case Max 1.79 4.17 °C/W
Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W
Rthc-sink Thermal resistance case-sink typ 0.5 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max) 6A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V) 160 mJ
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 250 µA, VGS= 0 200 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±20V ± 100 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 234V
RDS(on)
Static drain-source on
resistance VGS= 10V, ID= 3A 0.6 0.8 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS > ID(on) x RDS(on)max,
ID = 3A 1.5 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
350
70
35
pF
pF
pF
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 100V, ID = 3A,
RG = 4.7Ω, VGS = 10V
(see Figure 14)
18
30
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=160V, ID = 6A
VGS =10V
19
4.5
7.5
27 nC
nC
nC
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Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 6 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 24 A
VSD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD=6A, VGS=0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=6A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 16)
155
700
9
ns
µC
A
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3. Safe operating area for TO-220/FP Figure 4. Thermal impedance for TO-220/FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
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Figure 7. Transconductance Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Normalized on resistance vs
temperature
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Figure 13. Source-drain diode forward
characteristics
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3 Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
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Package mechanical data IRF620 - IRF620FP
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
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L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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5 Revision history
Table 7. Revision history
Date Revision Changes
05-Sep-2004 2 Complete document
03-Aug-2006 3 New template, no content change
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