NVTFS5820NLTAG - ON Semiconductor

November, 2011 − Rev. 2

1Publication Order Number:

NVTFS5820NL/D

NVTFS5820NL

Power MOSFET

60 V, 11.5 mW, Single N−Channel, m8FL

Features

•Small Footprint (3.3x3.3 mm) for Compact Design

•Low RDS(on) to Minimize Conduction Losses

•Low QG and Capacitance to Minimize Driver Losses

•AEC−Q101 Qualified

•These are Pb−Free Devices*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 60 V

Gate−to−Source Voltage VGS "20 V

Continuous Drain Cur-

rent RYJ−mb (Notes 1,

2, 3, 4) Steady

State

Tmb = 25°CID29 A

Tmb = 100°C 20

Power Dissipation

RYJ−mb (Notes 1, 2, 3)

Tmb = 25°CPD21 W

Tmb = 100°C 10

Continuous Drain Cur-

rent RqJA (Notes 1 &

3, 4) Steady

State

TA = 25°CID11 A

TA = 100°C 8.0

Power Dissipation

RqJA (Notes 1, 3)

TA = 25°CPD3.2 W

TA = 100°C 1.6

Pulsed Drain Current TA = 25°C, tp = 10 msIDM 247 A

Current limited by package

(Note 4)

TA = 25°C IDmaxPkg 70 A

Operating Junction and Storage Temperature TJ, Tstg −55 to

175

°C

Source Current (Body Diode) IS17 A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,

IL(pk) = 37 A, L = 0.1 mH, RG = 25 W)

EAS 48 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter Symbol Value Unit

Junction−to−Mounting Board (top) − Steady

State (Note 2, 3)

RYJ−mb 7.3 °C/W

Junction−to−Ambient − Steady State (Note 3) RqJA 47

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

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Device Package Shipping†

V(BR)DSS RDS(on) MAX ID MAX

60 V

11.5 mW @ 10 V

29 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

WDFN8

(m8FL)

CASE 511AB

MARKING DIAGRAM

15 mW @ 4.5 V

NVTFS5820NLTAG WDFN8

(Pb−Free)

1500/Tape &

Reel

(Note: Microdot may be in either location)

5820 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

NVTFS5820NLTWG WDFN8

(Pb−Free)

5000/Tape &

Reel

5820

AYWWG

N−Channel

*For additional information on our Pb−Free strategy and

soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

NVTFS5820NL

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ57 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 60 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.3 V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ6.2 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 8.7 A 10.1 11.5 mW

VGS = 4.5 V ID = 7.3 A 13.0 15

Forward Transconductance gFS VDS = 5 V, ID = 10 A 24.6 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance Ciss

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

1462 pF

Output Capacitance Coss 150

Reverse Transfer Capacitance Crss 96

Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V, ID = 10 A 28 nC

VGS = 4.5 V, VDS = 48 V, ID = 10 A 15

Threshold Gate Charge QG(TH)

VGS = 4.5 V, VDS = 48 V, ID = 10 A

Gate−to−Source Charge QGS 4

Gate−to−Drain Charge QGD 8

Plateau Voltage VGP 3 V

Gate Resistance RG0.62 W

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time td(on)

VGS = 4.5 V, VDS = 48 V,

ID = 10 A, RG = 2.5 W

10 ns

Rise Time tr28

Turn−Off Delay Time td(off) 19

Fall Time tf22

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 10 A

TJ = 25°C 0.79 1.2 V

TJ = 125°C 0.65

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 10 A

19 ns

Charge Time ta13

Discharge Time tb6

Reverse Recovery Charge QRR 15 nC

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NVTFS5820NL

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TYPICAL CHARACTERISTICS

012345

Figure 1. On−Region Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

10 V

3.4 V

VGS = 5 V

2.8 V

4.0 V

3.8 V

3.6 V

TJ = 25°C

3.0 V

3.2 V

12345

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

0.005

0.010

0.015

0.020

0.025

0.030

24681012

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

ID = 10 A

TJ = 25°C

0.008

0.010

0.012

0.014

0.016

5 10152025303540

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

VGS = 4.5 V

TJ = 25°C

VGS = 10 V

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.3

−50 −25 0 25 50 75 100 125 175

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

VGS = 10 V

ID = 10 A

100

1,000

10,000

100,000

10 20 30 40 50 60

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

IDSS, LEAKAGE (nA)

TJ = 125°C

TJ = 150°C

VGS = 0 V

150

2.1

NVTFS5820NL

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TYPICAL CHARACTERISTICS

200

400

600

800

1000

1200

1400

1600

1800

0 102030405060

Figure 7. Capacitance Variation

DRAIN−TO−SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss 0

0 5 10 15 20 25 30

Figure 8. Gate−to−Source Voltage vs. Total

Charge

Qg, TOTAL GATE CHARGE (nC)

VGS, GATE−TO−SOURCE VOLTAGE (V)

VDS = 48 V

ID = 10 A

TJ = 25°C

Qgs

Qgd

100

1000

1 10 100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

t, TIME (ns)

VDD = 48 V

ID = 10 A

VGS = 4.5 V

td(off)

td(on)

0.5 0.6 0.7 0.8 0.9 1.0

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

IS, SOURCE CURRENT (A)

TJ = 25°C

VGS = 0 V

0.1

100

1000

0.1 1 10 100

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAISN VOLTAGE (V)

ID, DRAIN CURRENT (A)

VGS = 10 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

100 ms10 ms

1 ms

10 ms

25 50 75 100 125 150

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

EAS, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

175

ID = 37 A

NVTFS5820NL

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TYPICAL CHARACTERISTICS

0.01

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 13. Thermal Response

PULSE TIME (sec)

RqJ(t) (°C/W) EFFECTIVE TRANSIENT

THERMAL RESISTANCE

0.1

Duty Cycle = 0.5

0.2

0.05

0.02

0.01

Single Pulse

NVTFS5820NL

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PACKAGE DIMENSIONS

WDFN8 3.3x3.3, 0.65P

CASE 511AB

ISSUE C

0***

1.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH

PROTRUSIONS OR GATE BURRS.

TOP VIEW

SIDE VIEW

BOTTOM VIEW

0.20

DIM MIN NOM

MILLIMETERS

A0.70 0.75

A1 0.00

1.47 1.60

0.64

0.06 0.13

0.10

DETAIL A

8L1

e/2

0.10 B

DETAIL A

SEATING

PLANE

MAX

0.80

0.05

0.40

0.25

3.15

2.24

3.15

1.73

0.51

0.20

*For additional information on our Pb *Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting T

echniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.650.42

0.75 2.30

3.46

PACKAGE

0.055 0.059

0***

0.063

0.028 0.030

0.000

0.006 0.008

0.025

0.002 0.005

0.031

0.002

0.016

0.010

0.124

0.088

0.124

0.068

0.020

0.008

MIN NOM

INCHES

MAX

PITCH

3.60

0.57

0.47

OUTLINE

DIMENSION: MILLIMETERS

3.30 BSC

0.130 BSC

2.37

0.66

E3 0.23 0.30 0.40 0.009 0.012 0.016

234

q°°°°

0.30

1.40 1.50

*** *** *** ***

0.43 0.56 0.012 0.017 0.022

0.0160.012

0.410.30

0.65 BSC 0.026 BSC

0.058 0.063

0.116 0.120

3.05

2.95

1.98

2.95 3.05

2.11 0.078

0.116 0.120

0.083

*** ***

0.0120.009

0.23

0.15

0.30

0.20

0.05

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NVTFS5820NL/D

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