SEMICONDUCTOR eee TECHNICAL DATA 2N3485A: 2N3486A. - PNP Silicon Small-Signal Transistors _. designed for high-speed switching circuits and DC to VHF ampi ifier applications. CRYSTALONCS 2805 Veterans Highway Suite 14 Rankorkoma, N.Y. 14778 MAXIMUM RATINGS Rating Symbo! Value Unit Cotlector-Emitter Voltage VCEO 60 Vde Collector-Base Voltage VcBo 60 Vdc Emitter-Base Voltage VEBO 5.0 Vde Collector Current Ico 600 mAdc Power Dissipation Pr @ Tp = 28C 0.4 Watts Derate above 25C pee mwirc ' 2.0 Watts @Tc = 25C 11.43 mw Derate above 25C CASE 26-03, STYLE 1 Operating Junction and Storage Ty. Tstg ~65 to 200 6 TO-208AB (TO-48) Temperature Range ELECTRICAL CHARACT ERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol | min | Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage('! ) ViBRICEO 60 Vde {Ic = 10 mAdc, Ig = 0) Collector-Base Breakdown Voltage V(BR}CBO 60 _ Vde {ig = 10 pAde, Ig = 0) Base-Emitter Vonage ViBRIEBO 50 a Vde (IE = 10 pAde, I = 0) Collector Cutoff Current \cBo (Vp = 50 Vee, le = 0} - 10 nAde (Veg = 50 Vie, Ie = 0, Ta = 150C) - 10 wade Emitter Cutoff Current leBo _ 50 nAdc (Veg = 3.5 Vae, Ic = 0) (continued) (1) Pulsed. Pulse Width 250 to 350 ps Duty Cycle 10 to 2.0%.2N3485AJAN, 2N34S6AJAN SERIES ' ELECTRICAL CHARACTERISTICS continued (Ta = 25 C unless otherwise noted.) Characteristic ! ON CHARACTERISTICS OC Current Gain (Ig = 0.1 mAde, VceE = 10 Vde) 2N3485A 2N34B6A (ig = 1.0 mAdc. VcE = 10 Vee) 2N3485A 2N3486A {Ig = 10 mAde. Voce = 10 Vdc} 2N3485A 2N34B6A 2NG4B5A (ig = 150 mAde. Voce = 10 vdey'!) 2N3486A {lg = 500 mAdc. VCE = 10 Vdc)? 2N3485A 2N34B6A 21.0 mAdc. VcE = 10 Vde. Ta = -65'C) 2N34854 {lg QNG486A Collector-Emitter Saturation Voltage!) ig = 150 mAdc. tg = 15 mAdc) th VCE (sat) Ic = 500 mAdc. Ip = 59 mAdc! Base-Emittar Saturation Voltage!) (Ig = 150 mAdc. IB = 15 mAdc) VBE(sat) (Ig = 500 mAdc, |g = 50 mAdc} SMALL-SIGNAL CHARACTERISTICS Current Gain (ic = 1.0 mAdc. Voge = 10 Vde. f=1 C kHz) 2N3485A 2NG4B6A Small-Signal Current Transter Ratio. Magnitude {ig = 50 mAdc. VCE = 20 Vde. f = 400 MHz) Output Capacitance (Vcp = 10 Vde. t= 0.1 to 10 MHZ) [Sono _| Input Capacitance (VEB = 2.0 Vdc. f= 0.1 to 1.0 MHz) T Cibo _| SWITCHING CHARACTERISTICS (See Figures 31 & 39) Turn-On Time 2N3485A Turn-Off Tima 2N3486A Turn-On + Turn-Off Time (Non-Saturated Switching} ASSURANCE TESTING (Pre/Post Burn-in} Burn-in Conditions: Ta = 225C, Vop = 30 Vde Py = 400 mw , Characteristics Tested Collector Cutoff Current (VCB = 0 Vdc} DC Current Gain(1) (I = 150 mAdc. VCE = 10 Vdc) 2N3485A 2N3486A urn-in Measured Values Delta from Pre-Bi 2, of Initial Value nAdc Delta Collector Cutotf Current whichever is greater Delta DC Current Gain") 2, of initial Value 1H) Pulsed Pulse Watth 260 t0 360 ys Duty Cycle 1 910 20%