N February 1996 NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel 3.0A, 20V, RDS(ON)=0.125 @ VGS=10V P-Channel -2.8A, -25V, RDS(ON)=0.16 @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. _________________________________________________________________________________ Absolute Maximum Ratings Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous TA = 25C - Continuous TA = 70C - Pulsed 6 3 7 2 8 1 N-Channel P-Channel Units 20 -20 V 20 20 V (Note 1a) 3.0 2.8 A (Note 1a) 2.5 2.3 10 TA = 25C Power Dissipation for Dual Operation Power Dissipation for Single Operation 10 2 (Note 1a) 1.6 (Note 1b) 1 (Note 1c) TJ,TSTG 4 T A= 25C unless otherwise noted Symbol PD 5 Operating and Storage Temperature Range W 0.9 -55 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W NDS9943.SAM Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min N-Ch 20 -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A P-Ch IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V N-Ch V V TJ = 55C VDS = -16 V, VGS = 0 V 2 A 25 A P-Ch -2 A -25 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V ALL -100 nA V TJ = 55C ON CHARACTERISTICS VGS(th) (Note 2) Gate Threshold Voltage VDS = VGS, ID = 250 A N-Ch TJ = 125C P-Ch VDS = VGS, ID = -250 A TJ = 125C RDS(ON) Static Drain-Source On-Resistance 1 1.5 3 0.7 1.1 2.2 -1 -2 -3 -0.85 -1.7 -2.6 0.062 0.125 0.085 0.175 0.073 0.16 0.08 0.25 0.11 0.35 N-Ch VGS = 10 V, ID = 3.0 A TJ = 125C VGS = 6 V, ID = 2.0 A VGS = 4.5 V, ID = 1.5 A TJ = 125C VGS = -10 V, ID = -3.0 A P-Ch 0.16 TJ = 125C 0.35 VGS = -6 V, ID = -2.0 A 0.2 VGS = -4.5 V, ID = -1.5 A 0.3 TJ = 125C ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 0.56 N-Ch VGS = 4.5 V, VDS = 5 V VGS = -10 V, VDS = -5 V Forward Transconductance 10 A 2 P-Ch VGS = -4.5 V, VDS = 5 V gFS -10 -2 VDS = 15 V, ID = 3.0 A N-Ch 7 VDS = -15 V, ID = -3.0 A P-Ch 4 N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch 525 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz P-Ch 525 N-Ch 315 P-Ch 300 N-Ch 185 P-Ch 130 pF pF pF NDS9943.SAM Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units N-Channel VDD = 20 V, ID = 1 A, VGEN = 10 V, RGEN = 6 N-Ch P-Ch 6 15 ns 8 40 N-Ch 12 20 P-Ch 15 40 N-Ch 22 50 P-Ch 25 90 N-Ch 8 50 P-Ch 8 50 N-Ch 17 27 25 SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time Turn - On Rise Time tr tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd P-Channel VDD = -20 V, ID = -1 A, VGEN = -10 V, RGEN = 6 N-Channel VDS = 10 V, ID = 2.3 A, VGS = 10 V P-Channel VDS = -10 V, ID = -2.3 A, VGS = -10 V Gate-Drain Charge P-Ch 15 N-Ch 1.2 P-Ch 1.2 N-Ch 5 P-Ch 4.8 ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage N-Ch 1.6 P-Ch trr Reverse Recovery Time Reverse Recovery Current Irr A -1.6 VGS = 0 V, IS = 1.25 A (Note 2) N-Ch 0.78 1.2 VGS = 0 V, IS = -1.25 A (Note 2) P-Ch -0.94 -1.6 N-Channel VGS = 0 V, IF = 1.25 A, dIF/dt = 100 A/s N-Ch 28 100 P-Ch 29 100 P-Channel VGS = 0 V, IF = -1.25 A, dIF/dt = 100 A/s N-Ch 2.1 P-Ch 1.9 V ns A Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. PD(t ) = T J -TA R JA(t ) = T J -TA R JC+RCA(t ) = I 2D (t ) x RDS(ON ) TJ Typical RJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpper. b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper. c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDS9943.SAM Typical Electrical Characteristics: N-Channel 2 4.0 R DS(on) , NORMALIZED 6.0 5.0 4.5 12 3.5 3.0 6 2.5 I D , DRAIN-SOURCE CURRENT (A) VGS = 10V DRAIN-SOURCE ON-RESISTANCE 18 0 0 1 2 V DS , DRAIN-SOURCE VOLTAGE (V) 5.0 1.2 6.0 1 10 0 2 4 6 I D , DRAIN CURRENT (A) 8 10 Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current. 0.14 I D = 2.2A 1.4 R DS(ON), ON-RESISTANCE (ohms) R DS(ON) , NORMALIZED 4.5 1.4 0.8 3 1.6 DRAIN-SOURCE ON-RESISTANCE 4.0 1.6 Figure 1. N-Channel On-Region Characteristics. V G S = 10V 1.2 1 0.8 0.6 -50 V GS = 4.5 V 0.12 T J = 125C 0.1 10V 0.08 4 .5 V 25C 10V 0.06 4 .5 V -55C 10V -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 0.04 0 Figure 3. N-Channel On-Resistance Variation with Temperature. 2 4 6 I D , DRAIN CURRENT (A) 8 10 Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature. 10 1.2 TJ = -55C 25 125 Vth , NORMALIZED 8 6 4 2 0 1 1.5 2 2.5 3 V GS , GATE TO SOURCE VOLTAGE (V) 3.5 Figure 5. N-Channel Transfer Characteristics. 4 GATE-SOURCE THRESHOLD VOLTAGE V DS = 10V ID , DRAIN CURRENT (A) VGS = 3.5V 1.8 V DS = V GS I D = 250A 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 6. N-Channel Gate Threshold Variation with Temperature. NDS9943.SAM Typical Electrical Characteristics: N-Channel (continued) 10 I D = 250A 5 1.1 IS , REVERSE DRAIN CURRENT (A) BVDSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.15 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 V GS = 0 V 2 TJ = 125C 1 0.5 25C 0.2 -55C 0.1 0.05 0.02 0.01 0.2 150 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 7. N-Channel Breakdown Voltage Variation with Temperature. Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature. 10 2000 VGS , GATE-SOURCE VOLTAGE (V) I D = 3.5A CAPACITANCE (pF) 1000 C iss 500 300 200 C oss f = 1 MHz V GS = 0V 100 0.1 C rss VDS = 10V 8 6 4 2 0 0.2 0.5 1 2 5 10 20 30 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 9. N-Channel Capacitance Characteristics. 0 4 8 Q g , GATE CHARGE (nC) 12 16 Figure 10. N-Channel Gate Charge Characteristics. VDS =10V T J = -55C 10 25C 8 6 125C 4 2 g FS , TRANSCONDUCTANCE (SIEMENS) 12 0 0 2 4 6 8 10 I D , DRAIN CURRENT (A) Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature. NDS9943.SAM Typical Electrical Characteristics: P-Channel (continued) -8.0 -7.0 -6.0 R DS(on), NORMALIZED I D , DRAIN-SOURCE CURRENT (A) VGS = -10V -5.0 -12 -4.0 -6 -3.0 0 DRAIN-SOURCE ON-RESISTANCE 3 -18 2.5 V GS = -4.0V -5.0 1.5 -1 -2 -3 -4 -6.0 -7.0 -8.0 -10 1 0.5 0 -4.5 2 -5 0 -2 -4 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 12. P-Channel On-Region Characteristics. -10 3.5 VG S = -4.5 V I D = -0.5A 1.4 V G S = -4.5V RDS(on) , NORMALIZED 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -8 Figure 13. P-Channel On-Resistance Variation with Gate Voltage and Drain Current. 1.5 3 2.5 TJ = 125C -4.5V 2 25C 1.5 1 125C -10V 25C -10V 0.5 150 TJ , JUNCTION TEMPERATURE (C) 0 -4 -6 I D , DRAIN CURRENT (A) Figure 14. P-Channel On-Resistance Variation with Temperature. Figure 15. P-Channel On-Resistance Variation with Drain Current and Temperature. -2 -8 -10 1.15 V DS = -10V TJ = -55C 25C -8 Vth , NORMALIZED 125C -6 -4 -2 0 -1 -2 -3 -4 V GS , GATE TO SOURCE VOLTAGE (V) Figure 16. P-Channel Transfer Characteristics. -5 GATE-SOURCE THRESHOLD VOLTAGE -10 I , DRAIN CURRENT (A) D -6 I D , DRAIN CURRENT (A) V DS = V GS 1.1 I D = -250A 1.05 1 0.95 0.9 0.85 0.8 0.75 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 17. P-Channel Gate Threshold Variation with Temperature. NDS9943.SAM Typical Electrical Characteristics: P-Channel (continued) 10 I D = -250A 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 -25 VGS = 0 V 5 -I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1.08 0 25 50 75 100 T J , JUNCTION TEMPERATURE (C) 125 2 TJ = 125C 1 25C 0.5 -55C 0.2 0.1 0.05 0.02 0.01 -0.2 150 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 18. P-Channel Breakdown Voltage Variation with Temperature. Figure 19. P-Channel Body Diode Forward Voltage Variation with Current and Temperature. 10 1000 C iss CAPACITANCE (pF) 500 C oss 300 200 f = 1 MHz V GS = 0V 100 0.1 C rss - V GS , GATE-SOURCE VOLTAGE (V) I D = -2.3A 700 V DS = -10V 8 6 4 2 0 0.2 0.5 1 2 5 10 20 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 20. P-Channel Capacitance Characteristics. 0 2 4 6 8 10 Q g , GATE CHARGE (nC) 12 14 16 Figure 21. P-Channel Gate Charge Characteristics. T J = -55C 6 25C 4 125C 2 V DS = -15V g FS , TRANSCONDUCTANCE (SIEMENS) 8 0 0 -2 -4 -6 -8 -10 I D , DRAIN CURRENT (A) Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature. NDS9943.SAM Typical Electrical Characteristic: N & P-Channel (continued) 20 1ms 10 10m s I D , DRAIN CURRENT (A) 3 100 ms 1 10s 0.3 V GS = 10V 0.1 SINGLE PULSE TA = 25C 0.03 0.01 1 2 3 5 10 V DS , DRAIN-SOURCE VOLTAGE (V) 20 30 Figure 23. Maximum Safe Operating Area for both N & P-Channel. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0 .5 D = 0.5 0 .2 0.2 R JA (t) = r(t) * R JA R JA = See Note 1c 0.1 0 .1 0.05 0 .0 5 P(pk) 0.02 0 .0 2 0.01 0 .0 1 t1 Single Pulse 0 .0 0 5 t2 TJ - T = P * R JA (t) Duty Cycle, D = t 1 / t 2 A 0 .0 0 2 0 .0 0 1 0 .0001 0 .001 0 .0 1 0 .1 1 10 100 300 t 1 , TIME (sec) Figure 24. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. ton VDD t d(on) tf 90% 90% V OUT D VGS tr RL V IN to f f t d(off) VO U T 10% R GEN 10% DUT G 90% V IN S 50% 50% 10% PULSE WIDTH Figure 25. N or P-Channel Switching Test Circuit. Figure 26. N or P-Channel Switching Waveforms. NDS9943.SAM