February 1996
NDS9943
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description Features
_________________________________________________________________________________
Absolute Maximum Ratings TA= 25°C unless otherwise noted
Symbol Parameter N-Channel P-Channel Units
VDSS Drain-Source Voltage 20 -20 V
VGSS Gate-Source Voltage ± 20 ± 20 V
IDDrain Current - Continuous TA = 25°C (Note 1a) ± 3.0 ± 2.8 A
- Continuous TA = 70°C (Note 1a) ± 2.5 ± 2.3
- Pulsed TA = 25°C ± 10 ± 10
PDPower Dissipation for Dual Operation 2W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
NDS9943.SAM
These dual N- and P-Channel enhancement mode power
field effect transistors are produced using National's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
N-Channel 3.0A, 20V, RDS(ON)=0.125Ω @ VGS=10V
P-Channel -2.8A, -25V, RDS(ON)=0.16Ω @ VGS=-10V.
High density cell design or extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
1
5
6
7
8
4
3
2
N
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 20 V
VGS = 0 V, ID = -250 µA P-Ch -20 V
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V N-Ch 2µA
TJ = 55°C 25 µA
VDS = -16 V, VGS = 0 V P-Ch -2 µA
TJ = 55°C -25 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V ALL -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA N-Ch 11.5 3V
TJ = 125°C 0.7 1.1 2.2
VDS = VGS, ID = -250 µA P-Ch -1 -2 -3
TJ = 125°C -0.85 -1.7 -2.6
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.0 A N-Ch 0.062 0.125 Ω
TJ = 125°C 0.085 0.175
VGS = 6 V, ID = 2.0 A 0.073 0.16
VGS = 4.5 V, ID = 1.5 A 0.08 0.25
TJ = 125°C 0.11 0.35
VGS = -10 V, ID = -3.0 A P-Ch 0.16
TJ = 125°C 0.35
VGS = -6 V, ID = -2.0 A 0.2
VGS = -4.5 V, ID = -1.5 A 0.3
TJ = 125°C 0.56
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V N-Ch 10 A
VGS = 4.5 V, VDS = 5 V 2
VGS = -10 V, VDS = -5 V P-Ch -10
VGS = -4.5 V, VDS = 5 V -2
gFS Forward Transconductance VDS = 15 V, ID = 3.0 AN-Ch 7S
VDS = -15 V, ID = -3.0 A P-Ch 4
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch 525 pF
P-Ch 525
Coss Output Capacitance N-Ch 315 pF
P-Ch 300
Crss Reverse Transfer Capacitance N-Ch 185 pF
P-Ch 130
NDS9943.SAM
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time N-Channel
VDD = 20 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 Ω
P-Channel
VDD = -20 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 Ω
N-Ch 6 15 ns
P-Ch 8 40
trTurn - On Rise Time N-Ch 12 20 ns
P-Ch 15 40
tD(off) Turn - Off Delay Time N-Ch 22 50 ns
P-Ch 25 90
tfTurn - Off Fall Time N-Ch 8 50 ns
P-Ch 8 50
QgTotal Gate Charge N-Channel
VDS = 10 V,
ID = 2.3 A, VGS = 10 V
P-Channel
VDS = -10 V,
ID = -2.3 A, VGS = -10 V
N-Ch 17 27 nC
P-Ch 15 25
Qgs Gate-Source Charge N-Ch 1.2 nC
P-Ch 1.2
Qgd Gate-Drain Charge N-Ch 5nC
P-Ch 4.8
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current N-Ch 1.6 A
P-Ch -1.6
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 1.25 A (Note 2)N-Ch 0.78 1.2 V
VGS = 0 V, IS = -1.25 A (Note 2)P-Ch -0.94 -1.6
trr Reverse Recovery Time N-Channel
VGS = 0 V, IF = 1.25 A, dIF/dt = 100 A/µs
P-Channel
VGS = 0 V, IF = -1.25 A, dIF/dt = 100 A/µs
N-Ch 28 100 ns
P-Ch 29 100
Irr Reverse Recovery Current N-Ch 2.1 A
P-Ch 1.9
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD(t)=TJ−TA
RθJA(t)=TJ−TA
RθJC+RθCA(t)=ID
2(t)×RDS(ON)TJ
Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpper.
b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper.
c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9943.SAM
1a 1b 1c
NDS9943.SAM
0 1 2 3
0
6
12
18
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
6.0 5.0 4.5 4.0
3.5
2.5
V = 10V
GS
DS
D
3.0
-50 -25 025 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 2.2A
D
R , NORMALIZED
DS(ON)
-50 -25 025 50 75 100 125 150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250µA
D
V = V
DS GS
V , NORMALIZED
th
0246810
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.5V
GS
D
R , NORMALIZED
DS(on)
4.0
6.0
10
4.5
5.0
0 2 4 6 8 10
0.04
0.06
0.08
0.1
0.12
0.14
I , DRAIN CURRENT (A)
R , ON-RESISTANCE (ohms)
T = 125°C
J
25°C
-55°C
D
V = 4.5 V
GS
4.5V
10V
4.5V
10V
10V
DS(ON)
Typical Electrical Characteristics: N-Channel
Figure 1. N-Channel On-Region Characteristics. Figure 2. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 3. N-Channel On-Resistance Variation with
Temperature. Figure 4. N-Channel On-Resistance Variation with
Drain Current and Temperature.
Figure 5. N-Channel Transfer Characteristics. Figure 6. N-Channel Gate Threshold Variation
with Temperature.
11.5 22.5 33.5 4
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25 125
V = 10V
DS
GS
D
T = -55°C
J
NDS9943.SAM
-50 -25 0 25 50 75 100 125 150
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = 250µA
D
BV , NORMALIZED
DSS
J0.2 0.4 0.6 0.8 11.2
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
0 4 8 12 16
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 3.5A
V = 10V
D
DS
0.1 0.2 0.5 1 2 5 10 20 30
100
200
300
500
1000
2000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature. Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature.
Figure 9. N-Channel Capacitance Characteristics. Figure 10. N-Channel Gate Charge Characteristics.
Typical Electrical Characteristics: N-Channel (continued)
0 2 4 6 8 10
0
2
4
6
8
10
12
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
D
FS
V =10V
DS
125°C
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
NDS9943.SAM
-5-4-3-2-10
-18
-12
-6
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
-7.0
-6.0
-5.0
-3.0
V = -10V
GS
DS
D
-4.0
-8.0
-50 -25 025 50 75 100 125 150
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -4.5V
GS
I = -0.5A
D
R , NORMALIZED
DS(ON)
-50 -25 025 50 75 100 125 150
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = -250µA
D
V = V
DS GS
V , NORMALIZED
th
-10-8-6-4-20
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -4.0V
GS
D
R , NORMALIZED
DS(on)
-4.5
-8.0
-10
-6.0
-7.0
-5.0
-10-8-6-4-20
0.5
1
1.5
2
2.5
3
3.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
D
V = -4.5 V
GS
-4.5V
-10V
125°C
25°C
R , NORMALIZED
DS(on)
-10V
Typical Electrical Characteristics: P-Channel (continued)
Figure 12. P-Channel On-Region Characteristics. Figure 13. P-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 14. P-Channel On-Resistance Variation with
Temperature. Figure 15. P-Channel On-Resistance Variation with
Drain Current and Temperature.
Figure 16. P-Channel Transfer Characteristics. Figure 17. P-Channel Gate Threshold Variation
with Temperature.
-5-4-3-2-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -10V
DS
GS
D
T = -55°C
J 25°C 125°C
NDS9943.SAM
-50 -25 025 50 75 100 125 150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250µA
D
BV , NORMALIZED
DSS
J-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.2
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C -55°C
V = 0V
GS
SD
S
0 2 4 6 8 10 12 14 16
0
2
4
6
8
10
Q , GATE CHARGE (nC)
- V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -2.3A
V = -10V
D
DS
0.1 0.2 0.5 1 2 5 10 20
100
200
300
500
700
1000
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 18. P-Channel Breakdown Voltage
Variation with Temperature. Figure 19. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature.
Figure 20. P-Channel Capacitance Characteristics. Figure 21. P-Channel Gate Charge Characteristics.
Typical Electrical Characteristics: P-Channel (continued)
-10-8-6-4-20
0
2
4
6
8
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
D
FS
V = -15V
DS
125°C
Figure 22. P-Channel Transconductance Variation
with Drain Current and Temperature.
NDS9943.SAM
Typical Electrical Characteristic: N & P-Channel (continued)
Figure 23. Maximum Safe Operating Area for
both N & P-Channel.
1 2 3 5 10 20 30
0.01
0.03
0.1
0.3
1
3
10
20
±V , DRAIN-SOURCE VOLTAGE (V)
±I , DRAIN CURRENT (A)
DS
D
1ms
10ms
100ms
10s
V = ±10V
SINGLE PULSE
T = 25°C
GS
A
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
VIN
VOUT
on off
d(off) f
r
d(on)
t t
ttt
t
10%
PULSE WIDTH
Figure 25. N or P-Channel Switching Test Circuit.Figure 26. N or P-Channel Switching Waveforms.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
12
R (t) = r(t) * R
R = See Note 1c
θJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
Figure 24. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
