Rev.1.00 Sep. 10, 2004 page 1 of 7
HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching REJ03G0406-0100
Rev.1.00
Sep.10.2004
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• “J” is for Automotive app lication
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
1234
5
6
7
8
G
D
S
D
G
D
S
D
MOS1 MOS2
1
2
78
4
56
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item Symbol HAT1126R HAT1126RJ Unit
Drain to source voltage VDSS –60 –60 V
Gate to source voltage VGSS ±20 ±20 V
Drain current ID–6.0 –6.0 A
Drain peak current ID (pulse)Note1 –48 –48 A
Avalanche current IAPNote4 — –6.0 A
Avalanche energy EARNote4 —3.08mJ
Channel dissipation PchNote2 22W
Channel dissipation PchNote3 33W
Channel temperature Tch 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. 1 Drive operation: When usin g the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When usin g the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Unit
Drain to source breakdo wn
voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drai n current IDSS ——–1µAV
DS = –60 V, VGS = 0
HAT1126R IDSS ———µA
Zero gate voltage
drain current HAT1126RJ IDSS — — –10 µAVDS = –48 V, VGS = 0
Ta = 125°C
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA
Forward transfer admittance |yfs|4.07.0 — SI
D = –3.0 ANote5, VDS = –10 V
RDS(on) —4050mΩID = –3.0 ANote5, VGS = –10 VStatic drain to source on state
resistance RDS(on) —6085mΩID = –3.0 ANote5, VGS = –4.5 V
Input capacitance Ciss — 2300 — pF
Output capacitance Coss — 230 — pF
Reverse transfer capacitance Crss — 140 — pF
VDS = –10 V, VGS = 0
f = 1 MHz
Total gate charge Qg — 37 — nC
Gate to source charge Qgs — 6.5 — nC
Gate to drain charge Qgd — 8 — nC
VDD = –25 V
VGS = –10 V
ID = –6.0 A
Turn-on delay time td(on) — 20 — ns
Rise time tr — 15 — ns
Turn-off delay time td(off) — 55 — ns
Fall time tf — 10 — ns
VGS = –10 V, ID= –3.0 A
VDD ≅ –30 V
RL = 10 Ω
RG = 4.7 Ω
Body-drain diode forward voltage VDF — –0.85 –1.1 V IF = –6.0 A, VGS = 0Note5
Body-drain diode reverse recovery
time trr — 30 — ns IF = –6.0 A, VGS = 0
diF/dt = 100 A / µs
Notes: 5. Pulse test
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 3 of 7
Main Characteristics
4.0
3.0
2.0
1.0
050 100 150 200
Power vs. Temperature Derating
Typical Transfer CharacteristicsTypical Output Characteristics
2 Drive Operation
1 Drive Operation
Note 6:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Channel Dissipation Pch (W)
Drain Current I
D
(A)
Drain Current I
D
(A)
Ambient Temperature Ta (°C)
Gate to Source Voltage V
GS
(V)Drain to Source Voltage V
DS
(V)
–10
–8
–6
–4
–2
0–1 –2 –3 –4 –5
–3 V
V
GS
= –2.5 V
Pulse Test
–10
–8
–6
–4
–2
0–1–2–3–4–5
Tc = 75°C25°C
−25°C
V
DS
= –10 V
Pulse Test
–0.01
–10
–1
–0.1
–0.01 –0.1 –1 –10
Maximum Safe Operation Area
–100
–100
100 µs
10 µs
1 ms
PW = 10 ms
Note6
DC Operation (PW < 10 s)
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
–4 V
–10 V
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
RDS(on)
(mΩ)
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain Current I
D
(A)Gate to Source Voltage V
GS
(V)
–400
–300
–200
–100
0
–5 –10 –15 –20
–3 A
–1 A
I
D
= –5 A
–1 –10 –100
–3 –30
1000
200
500
100
20
10
50
V
GS
= –4.5 V
–10 V
Pulse Test
Pulse Test
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
DS(on)
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 4 of 7
Static Drain to Source on State Resistance
vs. Temperature
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
100
3
0.3
1
30
10
0.03
0.1
0.01
Forward Transfer Admittance vs.
Drain Current
25°C
Tc = –25°C
V
DS
= –10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance |yfs| (S)
Case Temperature Tc (°C) Drain Current I
D
(A)
160
120
80
40
–50 0–25 755025 100 125 150
0
V
GS
= –4.5 V
–10 V
–1 A –3 A
–5 A
I
D
= –1, –3, –5 A
Pulse Test
75°C
–0.1 –0.3 –1 –3 –10
Body-Drain Diode Reverse
Recovery Time
0 –10 –20 –30 –40 –50
3000
10000
1000
100
300
Typical Capacitance vs.
Drain to Source Voltage
0
–20
–40
–60
–80
–100
0
0
–4
–8
–12
–16
16 32 48 64 160
–20
Dynamic Input Characteristics
100
50
5
10
2
1
20
1000
300
30
100
3
10
1
–0.1 –0.3 –1 –3 –10
Switching Characteristics
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
10
30 V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= –6 A
V
GS
V
DS
V
DD
= –50V
–25V
–10V
V
DD
= –50 V
–25 V
–10 V
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, R
G
= 4.7 Ω, duty ≤ 1 %
tr
td(on)
td(off)
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Time t (ns)
Drain Current I
D
(A)
tf
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 5 of 7
–10
–8
–6
–4
–2
0–0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
V
GS
= 0, 5 V
–10 V
–5 V
Source to Drain Voltage
VSD (V)
Reverse Drain Current
IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γs (t)
10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
DM
P
PW
T
D = PW
T
θch – f(t) = γs (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
10 µ100 µ1 m 10 m 100 m 1 10 100 1000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
γs (t)
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
DM
P
PW
T
D = PW
T
θch – f(t) = γs (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 6 of 7
Vin Monitor
D.U.T.
Vin
-10 V
R
L
V
= -10 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
Rg 90%
10%
t
f
Switching Time Test Circuit Switching Time Waveform
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
-15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
Avalanche Test Circuit Avalanche Waveform
E = L • I •
2
1V
V - V
AR AP
DSS
DSS DD
2
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 7 of 7
Package Dimensions
Package Code
JEDEC
JEITA
Mass
(reference value)
FP-8DA
Conforms
—
0.085 g
*Dimension including the plating thickness
Base material dimension
1.75 Max
4.90
0.25
0.15
0˚ – 8˚
M
85
14
1.27
3.95
0.40 ± 0.06
*0.42 ± 0.08
5.3 Max
0.75 Max
0.14
+ 0.11
– 0.04
0.20 ± 0.03
*0.22 ± 0.03
0.60
+ 0.67
– 0.20
6.10
+ 0.10
– 0.30
1.08
As of January, 2003
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
HAT1126R-EL-E 2500 pcs Taping
HAT1126RJ-EL-E 2500 pcs Taping
Note: For some grades, production may be terminated. Please contact the Re nesas sales office to check the state of
production before ordering the product.
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