MMBTA55LSeries, MMBTA56LSeries, SMMBTA56LSeries Driver Transistors PNP Silicon www.onsemi.com Features * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 CASE 318 STYLE 6 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage MMBTA55 MMBTA56, SMMBTA56 VCEO Collector -Base Voltage MMBTA55 MMBTA56, SMMBTA56 VCBO Emitter -Base Voltage VEBO -4.0 Vdc IC -500 mAdc Collector Current - Continuous Vdc -60 -80 1 BASE 2 EMITTER Vdc -60 -80 MARKING DIAGRAM 2xx M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 RqJA PD C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. (c) Semiconductor Components Industries, LLC, 1994 April, 2018 - Rev. 9 1 PD 1 2xx = Device Code x = H for MMBTA55LT1G xx = GM for MMBTA56LT1G, SMMBTA56LT1G M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MMBTA55LT1/D MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = -1.0 mAdc, IB = 0) MMBTA55 MMBTA56, SMMBTA56 V(BR)CEO Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = -60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = -60 Vdc, IE = 0) MMBTA55 (VCB = -80 Vdc, IE = 0) MMBTA56, SMMBTA56 ICBO Vdc -60 -80 - - -4.0 - - -0.1 Vdc mAdc mAdc - -0.1 - -0.1 100 100 - - - -0.25 - -1.2 50 - ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = -100 mAdc, IB = -10 mAdc) VCE(sat) Base -Emitter On Voltage (IC = -100 mAdc, VCE = -1.0 Vdc) VBE(on) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (Note 4) (IC = -100 mAdc, VCE = -1.0 Vdc, f = 100 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 RL OUTPUT +10 V RB Vin 0 tr = 3.0 ns OUTPUT * CS t 6.0 pF 5.0 mF RB Vin * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2 200 100 VCE = -2.0 V TJ = 25C TJ = 25C 70 50 100 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series 70 50 Cibo 30 20 Cobo 10 30 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -0.2 -200 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current-Gain -- Bandwidth Product 1.0 k 700 500 TJ = 125C VCE = -1.0 V ts h FE, DC CURRENT GAIN t, TIME (ns) Figure 3. Capacitance 400 300 200 100 70 50 tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C 30 20 10 -5.0 -7.0 -10 200 25C -55C 100 80 60 tr td @ VBE(off) = -0.5 V -50 -70 -100 -200 -300 -20 -30 IC, COLLECTOR CURRENT (mA) 40 -0.5 -1.0 -2.0 -500 Figure 4. Switching Time -50 -100 -200 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -500 Figure 5. DC Current Gain 1 1.1 IC/IB = 10 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -50 -100 150C 25C -55C 0.1 IC/IB = 10 1.0 0.9 0.8 -55C 0.7 25C 0.6 0.5 0.4 150C 0.3 0.01 0.2 0.001 0.01 0.1 1 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 1 1.1 VCE = 1 V 1.0 0.9 -55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.2 0.0001 R qVB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.2 0.001 0.01 0.1 1 -1.0 TJ = 25C -0.8 IC = -100 mA IC = -50 mA IC = -250 mA IC = -500 mA -0.6 -0.4 IC = -10 mA -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 8. Base Emitter Voltage vs. Collector Current Figure 9. Collector Saturation Region -0.8 1 IC, COLLECTOR CURRENT (A) VBE(on), BASE-EMITTER VOLTAGE (V) MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series -1.2 -1.6 RqVB for VBE -2.0 -2.4 -2.8 -0.5 -1.0 -2.0 -50 1 mS 1S 100 mS 10 mS 0.1 Thermal Limit 0.01 0.001 -5.0 -10 -20 -50 -100 -200 0.1 -500 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient Figure 11. Safe Operating Area ORDERING INFORMATION Package Type Shipping MMBTA55LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBTA55LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel MMBTA56LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBTA56LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBTA56LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBTA56LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device Order Number For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb-Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE-ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE-ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT-23 (TO-236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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