© Semiconductor Components Industries, LLC, 1994
April, 2018 − Rev. 9 1Publication Order Number:
MMBTA55LT1/D
MMBTA55LSeries,
MMBTA56LSeries,
SMMBTA56LSeries
Driver Transistors
PNP Silicon
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBTA55
MMBTA56, SMMBTA56
VCEO −60
−80
Vdc
Collector−Base Voltage
MMBTA55
MMBTA56, SMMBTA56
VCBO −60
−80
Vdc
Emitter−Base Voltage VEBO −4.0 Vdc
Collector Current − Continuous IC−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
www.onsemi.com
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2xx M G
G
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
MMBTA55
MMBTA56, SMMBTA56
V(BR)CEO
−60
−80 −
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0) V(BR)EBO −4.0 −Vdc
Collector Cutoff Current
(VCE = −60 Vdc, IB = 0) ICES −−0.1 mAdc
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
MMBTA55
(VCB = −80 Vdc, IE = 0)
MMBTA56, SMMBTA56
ICBO
−
−
−0.1
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE 100
100 −
−
−
Collector−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −10 mAdc) VCE(sat) −−0.25 Vdc
Base−Emitter On Voltage
(IC = −100 mAdc, VCE = −1.0 Vdc) VBE(on) −−1.2 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) fT50 − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v300 ms, Duty Cycle v2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME -1.0 V VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME +VBB VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
www.onsemi.com
3
Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance
IC, COLLECTOR CURRENT (mA)
-100 -200-10
200
100
70
50
20
VR, REVERSE VOLTAGE (VOLTS)
-1.0 -100-0.1
100
70
50
30
20
10
-2.0
VCE = -2.0 V
TJ = 25°C
fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
-2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70
30
7.0
5.0 -0.2 -0.5 -5.0 -10 -20 -50
TJ = 25°C
Cibo
Cobo
Figure 4. Switching Time
IC, COLLECTOR CURRENT (mA)
-10-5.0
500
200
100
50
20
10
-100
t, TIME (ns)
-50 -200 -500
1.0 k
300
700
70
30
-7.0 -300-70-20 -30
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
tr
td @ VBE(off) = -0.5 V
Figure 5. DC Current Gain
-2.0 -500-0.5
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
-10
, DC CURRENT GAIN
TJ = 125°C
-1.0 -5.0
VCE = -1.0 V
-20 -100-50 -200
hFE
25°C
-55°C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.0010.0001
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
25°C−55°C
0.5
0.9
IC/IB = 10
150°C
25°C
−55°C
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
www.onsemi.com
4
Figure 8. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.4
0.8
1.0
VCE = 1 V
150°C
25°C
−55°C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature
Coefficient Figure 11. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
10
0
1010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Thermal Limit
100 mS
1 S
10 mS
1 mS
IB, BASE CURRENT (mA)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)VCE
-0.1 -10-0.05
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0
TJ = 25°C
-50
IC =
-100 mA
IC =
-50 mA
IC =
-250 mA
IC =
-500 mA
IC =
-10 mA
-20-2.0 -5.0-0.2 -0.5
IC, COLLECTOR CURRENT (mA)
RVB , TEMPERATURE COEFFICIENT (mV/ C)
q°
-100 -500-0.5
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-10
RqVB for VBE
-1.0 -2.0 -5.0 -20 -50 -200
ORDERING INFORMATION
Device Order Number Package Type Shipping†
MMBTA55LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBTA55LT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
MMBTA56LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
SMMBTA56LT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBTA56LT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
SMMBTA56LT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT−23 (TO−236)
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